BG75B12UX3-I
IGBT Power Module

BYD Microelectronics Co., Ltd.

VCE=1200V
General Description

Features

BYD IGBT Power Module BG75B12UX3-I provides fast
switching characteristic as well as high short circuit
capability, which introduce the advanced IGBT chip/FWD
and improved connection.

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IC=75A

High speed IGBT technology
Including ultra fast & soft recovery anti-parallel FWD
Low inductance
Standard package
High short circuit capability
Fast switching and short tail current

Applications
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High frequency drivers
AC motor control
Inverters
Servo
UPS (Uninterruptible Power Supplies)
Electric welding

Characteristic values
Parameter

Symbol

Conditions

Temperature

Value

Unit

Absolute Maximum Ratings
Collector-emitter voltage
Continuous collector current

VCES
IC

VGE=0V

Tj=25℃

1200

V

—

Tc=80℃

75

A

Peak collector current

ICRM

ICRM =2IC

—

150

A

Gate-emitter voltage

VGES

—

—

+/-20

V

Total power dissipation

Ptot

per switch (IGBT)

Tc = 25℃

—

W

IGBT short circuit SOA

tpsc

Tvj≤125℃

10

us

VCC=600V, VGE≤15V
VCEM≤1200V

Max. junction temperature

Tvj max

—

—

150

℃

Operation junction temperature

Tvj op

—

—

-40~150

℃

Storage temperature range

Tstg

—

—

-40~125

℃

Diode DC forward current

IF

—

Tc=80℃

75

A

IFRM=2IF

—

150

A

—

A2s

2500

V

Peak forward current

IFRM

I2t-value, Diode

I2 t

VR=0V,t=10ms

Tj=125℃

Isolation voltage

Visol

t=1min,f=50Hz

—

Datasheet

WI-D06-J-0064 Rev.A/1

Page 1 of 9

BYD Microelectronics Co., Ltd.

Parameter

Symbol

BG75B12UX3-I

Conditions

Temperature

Value

Unit

Characteristics
IGBT
Gate-emitter threshold voltage

VGE(th)

Collector-emitter cut-off current

ICES

VCE=1200V,VGE=0V

Gate-emitter cut-off current

IGES

VCE=0V,VGE=±20V

Collector-emitter
saturation voltage
Integrated gate resistor
Total Gate Charge

VCE(sat)
RGint

Ic=75A,VGE=15V
—

Qg

Gate-Emitter Charge

Qge

Gate-Collector Charge

Qgc

Input capacitance

Cies

Output capacitance

Coes

Reverse transfer capacitance

Cres

Turn-on delay time

td(on)

Rise time

VGE=VCE, IC= 3mA

tr

VCE=600V,IC=75A,
VGE=±15V

VCE=25V,VGE =0V,
f=1MHz

VCC=600V,Ic=75A,
RGon=RGoff=3.3Ω,
VGE=± 15V,

Turn-off delay time

Fall time

td(off)

Lσ=80nH,
Inductive load

tf
VCC=600V, Ic=75A,

Energy dissipation during turn-on
time

Eon

RGon =3.3Ω,
VGE=± 15V, Lσ=80nH,
Inductive load
VCC=600V,Ic=75A,

Energy dissipation during turn-off
time

Eoff

RGoff=3.3Ω,VGE=± 15V
Lσ=80nH,
Inductive load

Datasheet

WI-D06-J-0064 Rev.A/1

min.

typ.

max.

Tvj=25℃

5.0

5.5

6.5

V

Tvj=25℃

—

—

1.0

mA

Tvj=125℃

—

—

1.0

mA

Tvj=25℃

-400

—

400

nA

Tvj=25℃

—

2.84

—

V

Tvj=125℃

—

3.7

—

V

Tvj=25℃

—

—

—

Ω

—

—

tbd

—

uC

—

—

tbd

—

uC

—

—

tbd

—

uC

—

tbd

—

nF

—

tbd

—

nF

—

tbd

—

nF

Tvj=25℃

—

323

—

ns

Tvj=125℃

—

345

—

ns

Tvj=25℃

—

63

—

ns

Tvj=125℃

—

68

—

ns

Tvj=25℃

—

283

—

ns

Tvj=125℃

—

300

—

ns

Tvj=25℃

—

132

—

ns

Tvj=125℃

—

155

—

ns

Tvj=25℃

—

5.06

—

mJ

Tvj=125℃

—

9.8

—

mJ

Tvj=25℃

—

2.87

—

mJ

Tvj=125℃

—

4.81

—

mJ

Tvj=25℃

Page 2 of 9

BYD Microelectronics Co., Ltd.

Parameter

Symbol

BG75B12UX3-I

Conditions

min.

typ.

Max.

min.

typ.

max.

Tvj=25℃

—

2.0

—

V

Tvj=125℃

—

1.7

—

V

Tvj=125℃

—

48

—

A

Diode
Forward voltage

VF

Peak reverse recovery current

IRR

Recovered charge

Qrr

IF=75A,VR=600V,

Tvj=125℃

—

12.2

—

uC

Reverse recovery time

trr

diF/dt=-550A/us

Tvj=125℃

—

380

—

ns

Tvj=125℃

—

5.05

—

mJ

Reverse recovery energy

IF=75A

Unit

Erec

Thermal-Mechanical Specifications
IGBT thermal resistance
junction to case
Diode thermal resistance junction to
case
Thermal resistance case to
heat-sink
Dimensions

Rth(j-c)

per IGBT

—

tbd

—

K/W

Rth(j-c)

per diode

—

tbd

—

K/W

Rth(c-s)

per module

—

0.03

—

K/W

LxWxH

Typical , see outline drawing
according to IEC

Clearance distance in air

da

60664-1 and EN
50124-1
according to IEC

Surface creepage distance

ds

60664-1 and EN
50124-1

Mass

m

—

94× 34× 30.5

mm

Term. to base:

—

—

17

Term. to term:

—

—

9.5

Term. to base:

—

—

17

Term. to term:

—

—

20

—

—

160

—

mm

mm

Thermal and mechanical properties according to IEC 60747 – 15
Specification according to the valid application note.

Datasheet

WI-D06-J-0064 Rev.A/1

Page 3 of 9

g

BYD Microelectronics Co., Ltd.

BG75B12UX3-I

Characterization curves
200
140

V GE=15V

VCE=20V

180

tp=10us

160

120

140

Tvj=25℃

100

IC[A]

IC[A]

120
80

100

Tvj=125℃

60

80

Tvj=125℃

60

Tvj=25℃

40

40
20

20
0

0
0

1

2

3
VCE [V]

4

4.5

5

5.5

6.5

7.5

8.5

9.5

10.5

11.5

VGE[V]

Fig.1 Typ. On-state Characteristics

Fig.2 Typ. Transfer Characteristics

30

150
Tvj=125℃
VGE=17V

Vcc=600V
VGE=15V
Rg=3.3Ω
L=80nH

VGE=13V

120

Tvj=25℃

Tvj=125℃

VGE=15V
20

Eon
E[mJ]

IC[A]

VGE=11V

90

VGE=9V

60

Eoff

10

30

0

0
0

1

2

3

4

5

6

7

8

0

30

VCE[V]

90

120

I C[A]

Fig.3 Typ. Output Characteristics

Datasheet

60

Fig.4 Switching Loss vs. Collector Current

WI-D06-J-0064 Rev.A/1

Page 4 of 9

150

BYD Microelectronics Co., Ltd.

BG75B12UX3-I

16

90
Vcc=600V
Ic=75A
VGE =15V
Tvj=125℃

80

3.3
5.1

70

Eon

12

10

60

Irr
50

E[mJ]

IRR[A]Erec[mJ]Qrr[uC]

Vcc=600V
Ic=75A
VGE=15V
Tvj=125℃

RG=15

8

40

Eoff

30

Erec

20

4

Qrr

Erec
10

0

0

400

500

600

700

800

900

1000

0

5

Rg[Ω] 10

15

di/dt[A/us]

Fig.5 Typ. Reverse Recovery Characteristics vs di/dt

Fig.6 Switching Loss vs. Gate Resistor

700

600
Vcc=600V,VGE=15V
Rg=3.3Ω,Tvj=125℃

Vcc=600V
Ic=75A
VGE=15V
Tvj=125℃

600

500

500

400

tdon

tdon

tdoff

t[ns]

t[ns]

400

300
tdoff

300

200
200

tf
100

tf
tr

100

tr
0

0

0

40

80

120

160

0

IC[A]

Fig.7 Typ. Switching Times vs. IC

Datasheet

2.5

5

7.5

10
Rg[Ω]

12.5

15

Fig.8 Typ. Switching Times vs. Gate resistor RG

WI-D06-J-0064 Rev.A/1

Page 5 of 9

17.5

BYD Microelectronics Co., Ltd.

BG75B12UX3-I

10

150

Vcc=600V
VGE=15V
Rg=3.3Ω

8

Erec[mJ]

120

I F[A]

90

6
Tvj=125℃

Tvj=125℃
4

60

Tvj=25℃
30

2

Tvj=25℃

0

0
0

0.5

1

1.5
VF[V]

2

2.5

3

0

Fig.9 FWD Forward Characteristics.

40

60

80
100
IF[A]

120

140

Fig.10 Typ. Switching Losses Diode-Inverter

100

20

Vcc=600V
VCE=15V
Tvj=125℃

18

5.1

10

16

Tj=125℃
VGE=15V

3.3
150A

RG=15

14

100A

10

IC[A]

75A

12
Qrr[uC]

20

50A

50

8
6

If=20A

4
2

0

0
0

100

200

300

400
500
di/dt[A/us]

600

700

0

40

80

120

TC[℃]

Fig.11 Typ. FRD Recovery charger

Datasheet

800

Fig. 12 Rate Current vs. Temperature（TC）

WI-D06-J-0064 Rev.A/1

Page 6 of 9

160

160

BYD Microelectronics Co., Ltd.

BG75B12UX3-I

175

Ic,Module
Ic,Chip
150

125

Ic[A]

100

75

50

25

0

0

200

400

600

VCE[A]

800

1000

1200

Fig.13 Reverse Bias Safe Operating Area
IGBT-inv(RBSOA)

Datasheet

WI-D06-J-0064 Rev.A/1

Page 7 of 9

BYD Microelectronics Co., Ltd.

BG75B12UX3-I

Circuit Diagram

Package Outlines
Dimensions in mm

Attached (recommended torque):
MS : (to heat sink M6) 3~5 Nm
Datasheet

M t : (to terminals M5) 2.5~4 Nm
WI-D06-J-0064 Rev.A/1

Page 8 of 9

BYD Microelectronics Co., Ltd.

BG75B12UX3-I

Attention
1.

In order to reduce the contact resistance, we suggest add thermal grease between base and heat-sink, which
thickness is about 0.1mm.
2. When installing the module, please wear a electrostatic bracelet to prevent the gate breakdown and the imbalance
power may damage the internal chip, even to damage the module.
3. This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

RESTRICTIONS ON PRODUCT USE
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The information contained herein is subject to change without notice.



BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high quality and
reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical
sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BME products, to
comply with the standards of safety in making a safe design for the entire system, including redundancy,
fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that
may ensue. In developing your designs, please ensure that BME products are used within specified operating
ranges as set forth in the most recent BME products specifications.



The BME products listed in this document are intended for usage in general electronics applications (personal
equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These BME products are neither
intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a
malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended
Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments,
traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc..
Unintended Usage of BME products listed in this document shall be made at the customer’s own risk.

Datasheet

WI-D06-J-0064 Rev.A/1

Page 9 of 9