Handbook of
X-ray Photoelectron
Spectroscopy
A Reference Book of Standard Spectra
for Identification and Interpretation of XPS Data
by
John F. Moulder
William F. Stickle
Peter E. Sobol
Kenneth D. Bomben
Edited by
Jill Chastain
Roger C. King, Jr.
Published by
ULVAC-PHI, Inc.
370 Enzo, Chigasaki 253-8522 Japan
Physical Electronics USA, Inc.
18725 Lake Drive East, Chanhassen,
Minnesota 55317, United States of America

Copyright 1992, 1995
by
Physical Electronics, Inc.
All rights reserved.
No part of the contents of this book
may be reproduced or transmitted
in any form or by any means
without the prior written permission of the publishers.
Printed in Japan

Preface
X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA), is wide-
ly used to investigate the chemical composition of surfaces. The use of XPS in analytical laboratories throughout the
world attests to the problem-solving capability of this technique. The ability to explore the first few atomic layers and
assign chemical states to the detected atoms has shown XPS to be a powerful addition to any analytical laboratory.
A great deal of information has been published on the principles of the technique and the diverse range of applications
for which it is used. Volumes of XPS spectra exist in the scientific literature, and international committees are estab-
lishing databases with reference spectra that will be made available to the general public. It is not the authors' intent to
exclude these spectra or to ignore these databases. Rather the intent is to assemble a concise volume of standard spectra
to aid in the identification of XPS data.
The previous version of this handbook, published in 1978, contained data acquired with a cylindrical mirror analyzer
(CMA). Since that time, our XPS hardware has evolved. We currently use a spherical capacitance analyzer (SCA) in
conjunction with improved detector technology and the choice of either a high-performance Al x-ray monochromator or
an achromatic Mg/Al dual anode x-ray source. A 1992 version of this handbook was updated from the previous hand-
book with data acquired using our current SCA, which has a transmission function different from that of a CMA, and
both monochromatic and achromatic x-ray sources. In addition, data are included from several elements not contained in
the 1978 version of the handbook. The current 1995 version of the handbook is a reprint of the 1992 version which
includes a few minor modifications. This handbook is meant to serve as a guide and reference work for the identifica-
tion, quantification, calibration and interpretation of XPS spectra for users of Physical Electronics XPS systems equipped
with SCAs and Omni Focus™ lenses. It is the authors' hope that this handbook will play a useful role in the practice of
XPS.
Physical Electronics, Inc.
October 1995

Acknowledgments: The authors and editor would like to thank the following individuals for their contributions to the
completion of this handbook: Dr. Charles Wagner, Surfex, for his contributions to the chemical states database; Dr.
Albert Bevolo, Iowa State University, Ames Laboratory (USDOE), for providing the rare earth samples; Linda Wirtjes,
Physical Electronics Laboratory; Teresa Salvati; Dr. Douglas Stickle; and Dr. Michael Burrell, General Electric Com-
pany. The National Museum of Natural History - Smithsonian Institution provided the cinnabar sample (NMNH R630)
used for the mercury data. We also gratefully acknowledge the authors of the previous handbook.

Li Lithium 34
Be Beryllium 36
B Boron 38
C Carbon 40
N Nitrogen 42
O Oxygen 44
F Fluorine 46
Ne Neon 48
Na Sodium 50
Mg Magnesium 52
Al Aluminum 54
Si Silicon 56
P Phosphorus 58
S Sulfur 60
Cl Chlorine 62
Ar Argon 64
K Potassium 66
Ca Calcium 68
Sc Scandium 70
Ti Titanium 72
V Vanadium 74
Cr Chromium 76
Mn Manganese 78
Fe Iron 80
Co Cobalt 82
Ni Nickel 84
Cu Copper 86
Zn Zinc 88
Ga Gallium 90
Ge Germanium 92
As Arsenic 94
Se Selenium 96
Br Bromine 98
Kr Krypton 100
Rb Rubidium 102
Sr Strontium 104
Y Yttrium 106
Zr Zirconium 108
Nb Niobium 110
Mo Molybdenum 112
Ru Ruthenium 114
Rh Rhodium 116
Pd Palladium 118
Ag Silver 120
Cd Cadmium 122
In Indium 124
Sn Tin 126
Sb Antimony 128
Te Tellurium 130
I Iodine 132
Xe Xenon 134
Cs Cesium 136
Ba Barium 138
La Lanthanum 140
Table of Contents
I. X-ray Photoelectron Spectroscopy
A. Introduction 9
B. Principles of the Technique 10
C. Preparing and Mounting Samples 12
1. Removing Volatile Material 12
2. Removing Nonvolatile Organic Contaminants 12
3. Surface Etching 13
4. Abrasion 13
5. Fracturing and Scraping 13
6. Grinding to Powder 13
7. Mounting Powders for Analysis 13
Ce Cerium 142
Pr Praseodymium 144
Nd Neodymium 146
Sm Samarium 148
Eu Europium 150
Gd Gadolinium 152
Tb Terbium 154
Dy Dysprosium 156
Ho Holmium 158
Er Erbium 160
Tm Thulium 162
Yb Ytterbium 164
Lu Lutetium 166
Hf Hafnium 168
Ta Tantalum 170
W Tungsten 172
Re Rhenium 174
Os Osmium 176
Ir Iridium 178
Pt Platinum 180
Au Gold 182
Hg Mercury 184
Tl Thallium 186
Pb Lead 188
Bi Bismuth 190
Th Thorium 192
U Uranium 194

D. Experimental Procedure 14
1. Technique for Obtaining Spectra 14
2. Instrument Calibration 15
3. Programming Scans for an Unknown Sample 15
a. Survey Scans 15
b. Detail Scans 16
E. Data Interpretation 16
1. The Nature of the Spectrum 16
a. General Features 16
b. Types of Lines 17
2. Line Identification 21
3. Chemical State Identification 22
a. Determining Static Charge on Insulators 22
b. Photoelectron Line Chemical Shifts and Separations 23
c. Auger Line Chemical Shifts and Auger Parameter 23
d. Chemical Information from Satellite Lines and Peak Shapes 24
4. Quantitative Analysis 25
5. Determining Element Location 26
a. Depth 26
b. Surface Distribution 28
c. Insulating Domains on a Conductor 28
F. How to Use this Handbook 29
II. Standard XPS Spectra of the Elements
III. Appendix
A. Auger Parameters 198
B. Chemical States Tables 213
C. Chemical States Tables References 243
D. Valence Band Spectra 250
E. Atomic Sensitivity Factors for X-ray Sources at 90° 252
F. Atomic Sensitivity Factors for X-ray Sources at 54.7° 253
G. Line Positions by Element for Al Ka X-rays 254
H. Line Positions by Element for Mg Ka X-rays 256
J. Line Positions in Numerical Order 258
K. Periodic Table 261

I. X-ray Photoelectron Spectroscopy

Handbook of X-ray Photoelectron Spectroscopy
A. Introduction
A. Introduction
X-ray Photoelectron Spectroscopy (XPS) was developed in the
mid-1960s by Kai Siegbahn and his research group at the
University of Uppsala, Sweden. The technique was first known
by the acronym ESCA (Electron Spectroscopy for Chemical
Analysis). The advent of commercial manufacturing of surface
analysis equipment in the early 1970s enabled the placement
of equipment in laboratories throughout the world. In 1981,
Siegbahn was awarded the Nobel Prize for Physics for his
work with XPS.
This handbook is meant to furnish the user with much of the
information necessary to use XPS for diverse types of surface
analysis. Information is provided on methods of sample
preparation, data gathering, elemental identification, chemical
state identification, quantitative calculation and elemental dis-
tribution.
Surface analysis by XPS involves irradiating a solid in vacuo
with monoenergetic soft x-rays and analyzing the emitted
electrons by energy. The spectrum is obtained as a plot of the
number of detected electrons per energy interval versus their
kinetic energy. Each element has a unique spectrum. The
spectrum from a mixture of elements is approximately the
sum of the peaks of the individual constituents. Because the
mean free path of electrons in solids is very small, the
detected electrons originate from only the top few atomic
layers, making XPS a unique surface-sensitive technique for
chemical analysis. Quantitative data can be obtained from
peak heights or peak areas, and identification of chemical
states often can be made from exact measurement of peak
positions and separations, as well as from certain spectral fea-
tures.
Included in this handbook are survey spectra, strong line
spectra and x-ray excited Auger spectra for most of the ele-
ments and some of their compounds, in addition to plots and
tables of energy shift data which aid in the identification of
chemical states.
<D PHYSICAL ELECTRONICS

B. Principles of the Technique
Handbook of X-ray Photoelectron Spectroscopy
B. Principles of the Technique
Surface analysis by XPS is accomplished by irradiating a
sample with monoenergetic soft x-rays and analyzing the energy
of the detected electrons. Mg Kot (1253.6 eV), Al Ka (1486.6
eV), or monochromatic Al Ka (1486.7 eV) x-rays are usually
used. These photons have limited penetrating power in a solid
on the order of 1-10 micrometers. They interact with atoms in
the surface region, causing electrons to be emitted by the
photoelectric effect. The emitted electrons have measured
kinetic energies given by:
KE = hv - BE - <|>s
(1)
where hv is the energy of the photon, BE is the binding energy
of the atomic orbital from which the electron originates, and (|)s
is the spectrometer work function.
The binding energy may be regarded as the energy difference
between the initial and final states after the photoelectron has
left the atom. Because there is a variety of possible final states
of the ions from each type of atom, there is a corresponding
variety of kinetic energies of the emitted electrons. Moreover,
there is a different probability or cross-section for each final
state. Relative binding energies and ionization cross-sections for
an atom are shown schematically in Figure 1. The Fermi level
corresponds to zero binding energy (by definition), and the
depth beneath the Fermi level in the figure indicates the relative
energy of the ion remaining after electron emission, or the bind-
ing energy of the electron. The line lengths indicate the relative
probabilities of the various ionization processes. The p, d and f
levels become split upon ionization, leading to vacancies in the
P1/2, P3/2, d3/2, d5/2, f5/2 and f7/2. The spin-orbit splitting ratio is 1:2
for p levels, 2:3 for d levels and 3:4 for f levels. As an example,
the spin-orbit splitting of the Si 2p is shown in Figure 2.
Because each element has a unique set of binding energies, XPS
can be used to identify and determine the concentration of the
elements in the surface. Variations in the elemental binding
energies (the chemical shifts) arise from differences in the
200
400
600
800
1000
1200
1400
1 Fermi Level
6p
6s
5d5/2
5d3/2
- 5pi/2
- 5s
"4fs/2
4f7/2
4ds/2
4d3/2
4p3/2
— 4pi/2
Figure 1. Relative binding energies and ionization cross-sections for V. The
binding energy is proportional to the distance below the line indicating the
Fermi level, and the ionization cmss-section is proportional to the length of
the line.
10
CD PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
B. Principles of the Technique
L2,3or2p
Binding Energy (eV)
Figure 2. High-resolution spectrum of single-crystal Si showing the spin-orbit
splitting of the 2p level.
chemical potential and polarizability of compounds. These
chemical shifts can be used to identify the chemical state of the
materials being analyzed.
In addition to photoelectrons emitted in the photoelectric
process, Auger electrons may be emitted because of relaxation
of the excited ions remaining after photoemission. This Auger
electron emission occurs roughly 1014 seconds after the
photoelectric event. The competing emission of a fluorescent x-
ray photon is a minor process in this energy ra^ge. In the Auger
process (Figure 3), an outer electron falls into the inner orbital
vacancy, and a second electron is simultaneously emitted, carry-
ing off the excess energy. The Auger electron possesses kinetic
energy equal to the difference between the energy of the initial
ion and the doubly charged final ion, and is independent of the
mode of the initial ionization. Thus, photoionization normally
leads to two emitted electrons — a photoelectron and an Auger
electron. The sum of the kinetic energies of the electrons
emitted cannot exceed the energy of the ionizing photons.
Probabilities of electron interaction with matter far exceed those
of the photons, so while the path length of the photons is of the
order of micrometers, that of the electrons is of the order of tens
of angstroms. Thus, while ionization occurs to a depth of a few
Photoelectron
Li or 2s
Korls
Auger electron
L2j3or2p
Li or 2s
Korls
Figure 3. The XPS emission process (top) for a model atom. An incoming
photon causes the ejection of the photoelectron. The relaxation process (bot-
tom) for a model atom resulting in the emission of a KL2jL23 electron. The
simultaneous two-electron coulombic rearrangement results in a final state
with two electron vacancies.
micrometers, only those electrons that originate within tens of
angstroms below the solid surface can leave the surface without
energy loss. These electrons which leave the surface without
energy loss produce the peaks in the spectra and are the most
useful. The electrons that undergo inelastic loss processes before
emerging form the background. Calculations of the inelastic
mean free paths of electrons in various materials are shown in
Figure 4.
<X> PHYSICAL ELECTRONICS
11

C. Preparing and Mounting Samples
Handbook of X-ray Photoelectron Spectroscopy
The electrons leaving the sample are detected by an electron
spectrometer according to their kinetic energy. The analyzer is
usually operated as an energy window, referred to as the pass
energy, accepting only those electrons having an energy within
the range of this window. To maintain a constant energy resolu-
tion, the pass energy is fixed. Incoming electrons are adjusted to
the pass energy before entering the energy analyzer. Scanning
for different energies is accomplished by applying a variable
electrostatic field before the analyzer. This retardation voltage
may be varied from zero up to and beyond the photon energy.
Electrons are detected as discrete events, and the number of
electrons for a given detection time and energy is stored and
displayed.
1000 1500
Electron Energy (eV)
Figure 4. Calculated inelastic electron mean free paths in various metals from
the method of S. Tanuma, C.J. Powell and D.R. Penn, Surf. Interface Anal.
17,911(1991).
C. Preparing and Mounting Samples
In the majority of XPS applications, sample preparation and
mounting are not critical. Typically, the sample is mechanically
attached to the specimen mount, and analysis is begun with the
sample in the as-received condition. Additional sample prepara-
tion is discouraged in many cases because any preparation
might modify the surface composition. For those samples where
special preparation or mounting cannot be avoided, the follow-
ing techniques are recommended.
1. Removing Volatile Material
Ordinarily, volatile material is removed from the sample
before analysis. In exceptional cases, when the volatile
layer is of interest, the sample may be cooled for
analysis. The cooling must be to a sufficiently low
temperature to guarantee that the volatile element is not
warmed to evaporation by any heat load that the analysis
conditions may impart.
Removal of unwanted volatile materials is usually ac-
complished by long-term pumping in a separate vacuum
system or by washing with a suitable solvent. Use fresh-
ly distilled solvent to avoid contamination by high boil-
ing point impurities within the solvent. Choice of the
solvent can be critical. Hexane or other light hydrocar-
bon solvents are probably least likely to alter the surface,
providing the solvent properties are satisfactory. Samples
may also be washed efficiently in a Soxhlett extractor
using a suitable solvent.
2. Removing Nonvolatile Organic Contaminants
When the nature of an organic contaminant is not of in-
terest or when a contaminant obscures underlying
material that is of interest, the contaminant may be
removed with appropriate organic solvents. As with
volatile materials, the choice of solvent can be critical.
12
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
C. Preparing and Mounting Samples
3. Surface Etching
Ion sputter-etching or other erosion techniques, such as
the use of an oxygen plasma on organic materials (see
Section E.5.a.(3), p. 27), may be used to remove surface
contaminants. This technique is particularly useful when
removing adventitious hydrocarbons from the sample or
when the native oxides, formed by exposure to the at-
mosphere, are not of interest.
Argon ion etching is commonly used to obtain informa-
tion on composition as a function of the exposure time
to ion etching. Calibration of the sputter rates can be
used to convert sputter time to information on depth into
the specimen. Because sputtering may cause changes in
the surface chemistry, identification of the changes in
chemical states with depth may not reflect the true com-
position.
4. Abrasion
Abrasion of a surface can be done without significant
contamination by using a laboratory wipe, a cork, a file
or a knife blade. This may cause local heating, and reac-
tion with environmental gases may occur (e.g., oxidation
in air and formation of nitrides in nitrogen). To prevent
oxidation of more active materials, perform abrasion in
an inert atmosphere such as a glove box. The abraded
material should then be transferred to the ultra-high
vacuum (UHV) chamber in a sealed vessel to preserve
the clean surface.
5. Fracturing and Scraping
With proper equipment, many materials can be fractured
or scraped within the test chamber under UHV condi-
tions. While this obviates contamination by reaction with
atmospheric gases, attention must be given to unex-
pected results which might occur. Fracturing might occur
along the grain boundaries which may not be repre-
sentative of the bulk material. Scraping can cover hard
material with soft material when the sample is multi-
phase.
6. Grinding to Powder
If spectra characteristic of bulk composition are desired,
samples may be ground to a powder in a mortar. Protec-
tion of the fresh surfaces from the atmosphere is re-
quired. When grinding samples, localized high tempera-
tures can be produced, so grinding should be done slow-
ly to minimize heat-induced chemical changes at the
newly created surfaces. The mortar should be well
cleaned before reuse.
7. Mounting Powders for Analysis
There are a number of methods which can be used to
mount powders for analysis. Perhaps the most widely
used method is dusting the powder onto a polymer-based
adhesive tape with a camel-hair brush. The powder must
be dusted across the surface carefully and lightly, with
no wiping strokes. Some researchers shun organic tape
for UHV work, but others have successfully used certain
types of tape in the 10 l() Torr range.
Alternative methods for mounting powders include
pressing the powder into indium or other soft foils, sup-
porting the powder on a metallic mesh, pressing the
powder into pellets or simply depositing the powder by
gravity. With the foil method, the powder is pressed be-
tween two pieces of pure foil. The pieces are then
separated, and one of them is mounted for analysis. Suc-
cess with this technique has been varied. Sometimes
bare foil remains exposed and, if the sample is an in-
sulator, parts of the powder can charge differently. Dif-
ferential charging can also be a problem when a metallic
mesh is used to support the powder. If a press is used to
form the powder into a pellet of workable dimensions, a
press with hard and extremely clean working surfaces
should be used. Gravity can effectively hold some
materials in place, particularly if a shallow well or
depression is cut in the surface of the sample mount.
Allowing a liquid suspension of the powder to dry on
the specimen holder is an effective way of producing a
(D PHYSICAL ELECTRONICS
13

D. Experimental Procedure
Handbook of X-ray Photoelectron Spectroscopy
uniform layer. With these methods, care must be taken in
pump-down to ensure that gas evolution does not disturb
the sample. A throttled roughing valve is especially ef-
fective.
D. Experimental Procedure
1. Technique for Obtaining Spectra
All spectra in this handbook were obtained using a PHI
Model 5600 MultiTechnique system. A schematic
diagram of the apparatus (Figure 5) illustrates the
relationship of major components, including the electron
energy analyzer, the x-ray source, and the ion gun used
for sputter-etching. The Model 10-360 Electron Energy
Analyzer incorporated into the 5600 is an SCA, and the
input lens to the analyzer is an Omni Focus III lens. The
excitation sources used were a Model 10-550 x-ray
source with a Model 10-410 monochromator and a
Model 04-548 dual-anode source which was used with a
magnesium anode. All of the spectra in the handbook
were taken with the x-ray source operating at 400 W (15
kV - 27 mA). The specimens were analyzed at an
electron take-off angle of 70°, measured with respect to
the surface plane. The monochromatic x-ray source is lo-
cated perpendicular to the analyzer axis, and the stand-
ard x-ray source is located at 54.7° relative to the
analyzer axis.
In the PHI Model 5600 MultiTechnique system, energy
distribution, energy resolution and analysis area are all a
function of the analyzer. For all of the spectra in this
handbook, the spectrometer was operated in a standard
mode. The Omni Focus III lens was used to scan the
spectrum while the SCA was operated at a constant pass
energy. This resulted in constant resolution (AE) across
the entire energy spectrum. The size of the analysis area
was defined by the aperture selection of the Omni Focus
III lens. Analyzer energy resolution (AE/E) was deter-
mined by the choice of pass energy and the selected
aperture. All of the spectra in this handbook were ob-
tained using an 800 |im diameter analysis area.
All of the spectra in this handbook were recorded and
stored using the PHI ACCESS™ data system. The instru-
ment was calibrated daily, and the calibration was check-
ed several times each day during data acquisition. The
analyzer work function was determined assuming the
binding energy of the Au 4f7/2 peak to be 84.0 eV. All
survey spectra scans were taken at a pass energy of 58.7
eV. The narrow scans of strong lines were, in most
cases, just wide enough to encompass the peak(s) of in-
terest and were obtained with a pass energy of 23.5 eV.
A lower pass energy may show more structure for some
materials. The narrow spectra were necessary to ac-
curately determine the energy, shape and spin-orbit split-
ting of the strong lines. On insulating samples, a high-
resolution spectrum was taken of the adventitious
hydrocarbon on the surface of the sample to use as a
reference for charge correction. The generally accepted
binding energy for adventitious carbon is 284.8 eV.
The samples analyzed to obtain the spectra in this hand-
book are standard materials of known composition.
Metal foils and polycrystalline materials with large sur-
face areas were mechanically fastened to the specimen
mount. Powder samples were ground with a mortar and
pestle to expose fresh surfaces and were dusted onto ad-
hesive tape. Most elemental standards were sputter-
etched immediately prior to analysis to remove surface
contamination. Most compounds, however, were ground
or cleaved, and the freshly exposed surface was analyzed
14
(D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
D. Experimental Procedure
Dual-anode x-ray source
Energy analyzer
X-ray monochromator
Figure 5. A schematic diagram of the PHI Model 5600 MultiTechnique sys-
tem.
without etching in order to avoid possible changes in
surface chemistry. Ne, Xe and Kr were implanted in
graphite and Ar in silicon via ion implantation to un-
known concentrations prior to analysis.
2. Instrument Calibration
To ensure the accuracy of the data presented in this
handbook, the instrument used to obtain the data was
calibrated regularly throughout the data-gathering
process. The best way to check calibration, and the
method used here, is to record suitable lines from a
known, conducting specimen. Typically, the Au 4f or Cu
2p and 3p lines are used. The lines should be recorded
with a narrow sweep width in the range of 5-10 eV, and
a pass energy of 23.5 eV or less (corresponding to the
pass energy normally used for high resolution scans)
should be used.
There is general agreement on accurate values of Cu, Au
and Ag standard line energies. The values in Table 1 are
recommended for clean Au, Ag and Cu:
Table 1. Reference Binding Energies (eV)
Cu3p
Au 4f7/2
Ag 3d5/2
Cu L3MM
Cu 2p3/2
Ag M4NN
AlKoc
75.14
83.98
368.26
567.96
932.67
1128.78
MgKa
75.13
84.00
368.27
334.94
932.66
895.75
from M. P. Seah Surf. Interface Anal. 14, 488 (1989)
Because the 2p3/2 and 3p3/2 photoelectron peak energies
of Cu are widely separated in energy, measurement of
these peak binding energies provides a quick and simple
means of checking the accuracy of the binding energy
scale. Utilizing all of the above standard energies estab-
lishes the linearity of the energy scale and its position,
i.e., the location of the Fermi level.
3. Programming Scans for an Unknown Sample
For a typical XPS investigation where the surface com-
position is unknown, a broad scan survey spectrum
should be obtained first to identify the elements present.
Once the elemental composition has been determined,
narrower detailed scans of selected peaks can be used
for a more comprehensive picture of the chemical com-
position. This is the procedure that has been followed in
compiling data for this handbook, even though specimen
composition was known prior to analysis.
a. Survey Scans. Most elements have major
photoelectron peaks below 1100 eV, and a scan range
from 1100-0 eV binding energy is usually sufficient to
<$ PHYSICAL ELECTRONICS
15

£. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
identify all detectable elements. The spectra in this hand-
book were recorded with a scan range of 1400-0 eV (Al
excitation) or 1200-0 eV (Mg excitation) binding energy.
In an unknown sample, if specific elements are suspected
at low concentrations, their standard spectra should be
consulted before programming the survey scan. If the
strongest line occurs above 1100 eV binding energy, the
scan range can be modified accordingly.
An analyzer pass energy of 187 eV, in conjunction with
the appropriate aperture, is recommended for survey
scans with the PHI Model 5600 MultiTechnique system.
These settings result in adequate resolution for elemental
identification and produce very high signal intensities,
minimizing data acquisition time and maximizing
elemental detectability.
b. Detail Scans. For purposes of chemical state iden-
tification, for quantitative analysis of minor components
and for peak deconvolution or other mathematical
manipulations of the data, detail scans must be obtained
for precise peak location and for accurate registration of
line shapes. There are some logical rules for this
programming.
(1) Scans should be wide enough to encompass
the background on both sides of the region of in-
terest, yet with small enough step sizes to permit
determination of the exact peak position. Sufficient
scanning must be done within the time limits of
the analysis in order to obtain good counting statis-
tics.
(2) Peaks from any species thought to be radia-
tion-sensitive or transient should be run first.
Otherwise, any convenient order may be chosen.
(3) No clear guidelines can be given on the maxi-
mum duration of data gathering on any one
sample. It should be recognized, however, that
chemical states have vastly varying degrees of
radiation sensitivity and that for any one set of ir-
radiation conditions, there exists for many samples
a condition beyond which it is impractical to at-
tempt gathering data.
(4) With the PHI Model 5600 MultiTechnique sys-
tem, an analyzer pass energy of 23 eV is normally
used for routine detail scans. Where higher energy
resolution is needed, lower pass energies can be
utilized. For example, the sputter-cleaned Si 2p on
p. 56, taken at 23 eV pass energy, can be compared
to the chemically etched Si 2p shown in Figure 2
(p. 11).
E. Data Interpretation
1. The Nature of the Spectrum
a. General Features. The spectrum is displayed as a
plot of the number of electrons versus electron binding
energy in a fixed, small energy interval. The position on
the kinetic energy scale equal to the photon excitation
energy minus the spectrometer work function
cor-
responds to a binding energy of 0 eV with reference to
the Fermi level (Equation 1, p. 10). Therefore, a binding
energy scale with 0 at that point and increasing to the
left is customarily used.
The spectra in this handbook are typical for the various
elements. The well-defined peaks are due to electrons
16
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
E. Data Interpretation
which have not suffered an inelastic energy loss emerg-
ing from the sample. Electrons that have lost energy in-
crease the level of the background at binding energies
higher than the peak energy. The background is con-
tinuous because the energy loss processes are random
and multiple. The background in the Mg Koc induced
spectra is larger than the background in the
monochromated Al Ka induced spectra because of ex-
citation by Bremsstrahlung radiation of the non-
monochromated light.
The "noise" in the spectrum is not instrumental in origin
but is the consequence of the collection of single
electrons as counts randomly spaced in time. The stand-
ard deviation for counts collected in any channel is equal
to the square root of the counts so that the percent stand-
ard deviation is 100/(counts)1/2. The signal-to-noise ratio
is then proportional to the square root of the counting
time. The background level upon which the peak is su-
perimposed is a characteristic of the specimen, the ex-
citation source and the transmission characteristics of the
instrument.
b. T^pes of Lines. Several types of peaks are observed
in XPS spectra. Some are fundamental to the technique
and are always observed. Others are dependent upon the
exact physical and chemical nature of the sample. A
third type is the result of instrumental effects. The fol-
lowing describes the various spectral features that are
likely to be encountered:
(1) Photoelectron Lines. The most intense
photoelectron lines are relatively symmetrical and
are typically the narrowest lines observed in the
spectra. Photoelectron lines of pure metals can,
however, exhibit considerable asymmetry due to
coupling with conduction electrons. Peak width is
a convolution of the natural line width (the
lifetime of the "hole" resulting from the
photoionization process), the width of the x-ray
line which created the photelectron line and the in-
strumental contribution to the observed line width.
Less intense photoelectron lines at higher binding
energies are usually wider by 1-4 eV than the lines
at lower binding energies. All of the photoelectron
lines of insulating solids are of the order of 0.5 eV
wider than photoelectron lines of conductors. The
approximate binding energies of all photoelectron
lines detectable by Al or Mg radiation are
cataloged in Appendices G and H.
(2) Auger Lines. These are groups of lines in
rather complex patterns. There are four main
Auger series observable in XPS. They are the
KLL, LMM, MNN and NOO series, identified by
specifying the initial and final vacancies in the
Auger transition. The KLL series, for example, in-
cludes those processes with an initial vacancy in
the K shell and final double vacancy in the L shell.
The symbol V (e.g., KVV) indicates that the final
vacancies are in valence levels. The KLL series
has, theoretically, nine lines, and others have still
more. Because Auger lines have kinetic energies
which are independent of the ionizing radiation,
they appear on a binding energy plot to be in dif-
ferent positions when ionizing photons of different
energies (i.e., different x-ray sources) are used.
Core-type Auger lines (with final vacancies deeper
than the valence levels) usually have at least one
component of intensity similar to the most intense
photoelectron line. Positions of the more
prominent Auger components are cataloged along
with the photoelectron peaks in Appendices G and
H.
(3) X-ray Satellites. The x-ray emission spectrum
from a nonmonochromatic source used for irradia-
tion exhibits not only the characteristic x-ray but
also some minor x-ray components at higher
photon energies. For each photoelectron peak that
results from the routinely used Mg and Al Ka x-
<D PHYSICAL ELECTRONICS
17

E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
ray photons, there is a family of minor peaks at
lower binding energies, with intensity and spacing
characteristic of the x-ray anode material. The pat-
tern of such satellites for Mg and Al is shown in
Table 2. A resultant spectrum using Mg x-rays is
shown in Figure 6.
Table 2. X-ray Satellite Energies and Intensities
Mg displacement, eV
relative height
Al displacement, eV
relative height
aii2
0
100
0
100
a3
8.4
8.0
9.8
6.4
a4
10.1
4.1
11.8
3.2
a5
17.6
0.6
20.1
0.4
20.6
0.5
23.4
0.3
P
48.7
0.5
69.7
0.6
300 220
Binding Energy (eV)
Figure 6. Mg x-ray satellites observed in the C Is spectrum of graphite.
(4) X-ray Ghost Lines. Occasionally, x-radiation
from an element other than the x-ray source anode
material impinges upon the sample, resulting in
small peaks corresponding to the most intense
spectral peaks but displaced by a characteristic
energy interval. These lines may result from Mg
impurity in the Al anode or vice versa, Cu from
the anode base structure, oxidation of the anode, or
generation of x-ray photons in the Al foil x-ray
window. On occasion, such lines can originate via
generation of x-rays within the sample itself. This
last possibility is rare because the probability of
x-ray emission is low relative to Auger electron
emission. Nevertheless, such minor lines can be
puzzling. Table 3 indicates where such peaks are
most likely to occur relative to the most intense
photoelectron lines. Because such ghost lines rare-
ly appear with nonmonochromatic x-ray sources
and are not possible with monochromatic x-ray
sources, they should not be considered in line
identification until all other possibilities are ex-
cluded.
Table 3. Displacement of X-ray Ghost Lines (eV)
Contaminating
Radiation
0(Ka)
Cu (La)
Mg (Ka)
Al (Ka)
Anode
Mg
728.7
323.9
—
-233.0
Material
Al
961.7
556.9
233.0
—
(5) Shake-Up Lines. Not all photoelectric proces-
ses are simple ones which lead to the formation of
ions in the ground state, but there is a finite prob-
ability that the ion will be left in an excited state a
few electron volts above the ground state. In this
event, the kinetic energy of the emitted
photoelectron is reduced, with the difference cor-
responding to the energy difference between the
ground state and the excited state. This results in
the formation of a satellite peak a few electron
volts lower in kinetic energy (higher in binding
energy) than the main peak. For example, the char-
acteristic shake-up line for carbon in aromatic
compounds, a shake-up process involving the ener-
gy of the n -* 7C* transition, is shown in Figure 7.
In some cases, most often with paramagnetic com-
pounds, the intensity of the shake-up satellite may
18
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
E. Data Interpretation
300
280
Binding Energy (eV)
Figure 7. The n bond shake-up satellite for C Is in polystyrene. The peak is
about 6.7 eV higher than the main photopeak.
approach that of the main line. More than one
satellite of a principal photoelectron line can also
be observed, as shown in Figure 8. The occurrence
of such lines is sometimes also apparent in Auger
spectral contours (Figure 9). The displacements
and relative intensities of shake-up satellites can
sometimes be useful in identifying the chemical
state of an element, as discussed in Section E.3.d.
(p. 24).
(6) Multiplet Splitting. Emission of an electron
from a core level of an atom that itself has a spin
(unpaired electrons in valence levels) can create a
vacancy in two or more ways. The coupling of the
new unpaired electron left after photoemission
from an s-type orbital with other unpaired
electrons in the atom can create an ion with
several possible final state configurations and as
many energies. This results in a photoelectron line
which is split asymmetrically into several com-
ponents similar to the one shown in Figure 10.
Multiplet splitting also occurs in the ionization of
p levels, but the result is more complex and subtle.
In favorable cases, it results in an apparent slight
970
Binding Energy (eV)
Figure 8. Examples of shake-up lines (s) of the copper 2p observed in cop-
per compounds.
increase in the spin doublet separation, evidenced
in the separation of the 2pm and 2p3/2 lines in
first-row transition metals, and in the generation of
a less easily noticed asymmetry in the line shape
of the components. Often such effects on the p
doublet are obscured by shake-up lines.
(7) Energy Loss Lines. With some materials, there
is an enhanced probability for loss of a specific
<D PHYSICAL ELECTRONICS
19

E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
Binding Energy (eV)
Figure 9. Examples of the effects of chemical states on Auger line shapes in
nickel compounds.
amount of energy due to interaction between the
photoelectron and other electrons in the surface
region of the sample (Figure 11). The energy loss
phenomenon produces a distinct and rather sharp
hump 20-25 eV above the binding energy of the
parent line. Under certain conditions of spectral
display, energy loss lines can cause confusion.
Such phenomena in insulators are rarely sharper
than that shown in Figure 11 and are usually much
more muted. They are different in each solid
medium.
With metals, the effect is often much more
dramatic, as indicated by the loss lines for
aluminum shown in Figure 12. Energy loss to the
conduction electrons occurs in well-defined quanta
characteristic of each metal. These plasmons arise
from group oscillations of the conduction
electrons. The photoelectron line, or the Auger
line, is successively mirrored at intervals of higher
binding energy with reduced intensity. The energy
120 80
Binding Energy (eV)
Figure 10. Multiplet splitting of the Mn 3s.
interval between the primary peak and the loss
peak is called the plasmon energy. The so-called
bulk plasmons are the more prominent of these
lines. A second series, the surface plasmons, exists
at energy intervals determined approximately by
dividing the bulk plasmon energy by the square
root of two. The effect is not easily observed in
nonconductors, nor is it prominent in all conduc-
tors. Plasmon lines are especially prominent in the
Groups la and Ha metal spectra in this handbook.
(8) Valence Lines and Bands. Lines of low inten-
sity occur in the low binding energy region of the
20
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
E. Data Interpretation
520
Binding Energy (eV)
Figure 11. Energy loss envelope from the O Is line in A12O3 (sapphire).
Normal 1
Grazing ^^_.
b s
■~-— .—-^
> /
^X s /
^~——-^ /
^ ^
b
Al 2s
190
110
Binding Energy (eV)
Figure 12. Surface (s) and bulk (b) plasmon lines associated with the Al 2s
at normal and grazing take-off angles.
spectrum between the Fermi level and 10-20 eV
binding energy. These lines are produced by
photoelectron emission from molecular orbitals
and from solid state energy bands. Differences be-
tween insulators and conductors are especially
noted by the absence or presence of electrons from
conduction bands at the Fermi level. Valence
bands may also be used to distinguish between
materials where the core level XPS photoelectron
lines are quite similar in shape and position. Ap-
pendix D contains valence band spectra of several
materials.
2. Line Identification
In general, interpretation of the XPS spectrum is most
readily accomplished first by identifying the lines that
are almost always present (specifically those of C and
O), then by identifying major lines and associated
weaker lines, and lastly by identifying the remaining
weak lines. Most modern, commercially available
spectrometers have peak identification algorithms within
their data reduction packages. Poor signal-to-noise of the
data or database limitations may require manual iden-
tification of some peaks. The following step-by-step pro-
cedure simplifies the data interpretation task and mini-
mizes data ambiguities.
Step 1. The C Is, O Is, C (KLL) and O (KLL)
lines are usually prominent in any spectrum. Iden-
tify these lines first along with all derived x-ray
satellites and energy loss envelopes.
Step 2. Identify other intense lines (Appendix J)
present in the spectrum, then label any related
satellites and other less intense spectral lines as-
sociated with those elements. The energy positions
of the less intense lines are noted in the line posi-
tion table with the spectra. Keep in mind that some
lines may be interfered with by more intense,
overlapping lines from other elements. The most
serious interferences by the C and O lines, for ex-
ample, are Ru 3d by C Is, V 2p and Sb 3d by O
Is, I (MNN) and Cr (LMM) by O (KLL), and Ru
(MNN) by C (KLL).
(D PHYSICAL ELECTRONICS
21

E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
Step 3. Identify any remaining minor lines. In doing
this, assume they are the most intense lines of an un-
known element. If not, they should already have been
identified in the previous steps. Again, keep in mind
possible line interferences. Small lines that seem uniden-
tifiable can be ghost lines. Use Table 3 (p. 18) to check
for the more intense parent photoelectron lines.
Step 4. Check the conclusions by noting the spin
doublets for p, d and f lines. They should have the right
separation (cf. spin orbit splitting for individual elements
and Appendices G and H) and should be in the correct
intensity ratio. The ratio for p lines should be about 1:2,
d lines 2:3 and f lines 3:4. P lines, especially 4p lines,
may be less than 1:2.
3. Chemical State Identification
The identification of chemical states primarily depends
on the accurate determination of line energies. To deter-
mine line energies accurately, the voltage scale of the
instrument must be precisely calibrated (cf. Section D.2.,
p. 15), a line with a narrow sweep range must be
recorded with good statistics (of the order of several
thousand counts-per-channel above background), and ac-
curate correction must be made for static charge if the
sample is an insulator.
a. Determining Static Charge on Insulators. During
analysis, insulating samples tend to acquire a steady-
state charge of as much as several volts. This steady-
state charge is a balance between electron loss from the
surface by emission and electron gain by conduction or
by acquisition of slow or thermal electrons from the
vacuum. The steady-state charge, usually positive, can
be minimized with an adjacent neutralizer or flood gun.
It is often advantageous to do this to reduce differential
charging and sharpen the spectral lines.
A serious problem is exactly determining the extent
of charging. Any positive charging retards outgoing
electrons and tends to make the peaks appear at higher
binding energies, whereas excessive charge compensa-
tion can make the peaks shift to lower binding energies.
The following are four methods which are usually valid
for charge correction on insulating samples:
(1) Measurement of the position of the C Is line
from adventitious hydrocarbon nearly always
present on samples introduced from the laboratory
environment or from the glove box. This line, on
unsputtered inert metals such as Au or Cu, appears
at 284.8 eV, so any shift from this value can be
taken as a measure of the static charge. At this
time, it is not known whether a reproducible line
position exists for C remaining on the surface after
ion beam etching.
(2) The use of an internal standard, such as a
hydrocarbon moiety of a polymer sample. For the
study of supported catalysts or similar materials,
one can adopt a suitable value for a constituent of
the support and use that to interrelate binding ener-
gies of different samples. One must be certain that
treatments of the various samples are not so dif-
ferent that the inherent binding energies of support
constituents are changed.
(3) The use of a normally insulating sample so
thin that it effectively does not insulate. This can
be assumed if the spectrum of the underlying con-
ductor appears in good intensity and if line posi-
tions are not affected by changes in electron flux
from the charge neutralizer.
(4) For the study of insulating polymer films,
binding energies of the C functional groups may
also be determined by applying a small amount of
poly (dimethyl siloxane) solution (106 M) to the
sample surface and charge reference to the Si 2p
of the silicone (at about 102.1 eV).
22
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
E. Data Interpretation
Some precautions should be kept in mind. If the sample
is heterogeneous on even a micrometer scale, particles of
different materials can be charged to different extents,
and interpretation of the spectrum is complicated accord-
ingly. One cannot physically mix a conducting standard
like Au or graphite of micron dimensions with a powder
and validly use the Au or graphite line in order to cor-
rect for static charge. Differential charging can be mini-
mized to a great extent by using a flood source of low-
energy electrons.
b. Photoelectron Line Chemical Shifts and Separa-
tions. An important advantage of XPS is its ability to
obtain information on chemical states from the variations
in binding energies, or chemical shifts, of the
photoelectron lines. While many attempts have been
made to calculate chemical shifts and absolute binding
energies, the factors involved (especially in the solid
state) are imperfectly understood, and one must rely on
experimental data from standard materials. The tables
accompanying the spectra in this handbook record con-
siderable data from the literature as well as data obtained
specifically for this handbook. All literature data have
been carefully evaluated to the instrumental calibration
and static charge reference values given above and are,
therefore, directly comparable.
Because occasional line interferences do occur, it is
sometimes necessary to use a line other than the most
intense one in the spectrum. Chemical shifts of a minor
line are within 0.2 eV of the chemical shift of the
primary line. However, exceptional separations can
occur in paramagnetic materials because of multiplet
splitting. Separations of photoelectron lines can be deter-
mined approximately from the line position tables in Ap-
pendices G and H.
c. Auger Line Chemical Shifts and the Auger
Parameter. Core-type Auger lines (transitions ending
with double vacancies below the valence levels) usually
have at least one component that is narrow and intense,
often nearly as intense as the strongest photoelectron
line (cf. spectra for F, Na, As, In, Te and Pb). There are
four core Auger groups that can be generated by Mg or
Al x-rays: the KLL (Na, Mg); the LMM (Cu, Zn, Ga,
Ge, As, Se); the MNN (Ag, Cd, In, Sn, Sb, Te, I, Xe, Cs,
Ba); and NOO (Th, U). The MNN lines in the rare
earths, while accessible, are very broad because of multi-
plet splitting and shake-up phenomena with most of the
compounds. Valence-type Auger lines (final states with
vacancies in valence levels) — such as those for O and
F (KLL); Mn, Fe, Co and Ni (LMM); and Ru, Rh and
Pd (MNN) — can be intense and are, therefore, also
useful. Chemical shifts occur with Auger lines as well as
with photoelectron lines. The chemical shifts are dif-
ferent from those of the photoelectron lines, but they are
often more pronounced. This can be very useful for
identifying chemical states, especially in combination
with photoelectron chemical shift data. If data for the
various chemical states of an element are plotted with
the binding energy of the photoelectron line on the
abscissa and the kinetic energy of the Auger line on the
ordinate, a two-dimensional chemical state plot can be
obtained. Such plots are in Appendix A for F, Na, Al, Si,
S, Cu, Zn, As, Se, Ag, Cd, In, Sn and Te.
With chemical states displayed in two dimensions, the
Auger parameter method becomes more powerful as a
tool for identifying the chemical components than using
photoelectron chemical shifts alone. In the format
adopted for this handbook, the kinetic energy of the
Auger line is plotted against the binding energy of the
photoelectron line, with the latter plotted in the -x direc-
tion (kinetic energy is still, implicitly, +x). The kinetic
energy of the Auger electron, referred to the Fermi level,
is easily calculated by subtracting from the photon ener-
gy the position of the Auger line on the binding energy
scale.
With this arrangement, each diagonal line represents all
values of equal sums of Auger kinetic energy and
<D PHYSICAL ELECTRONICS
23

E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
photoelectron binding energy. The Auger parameter, a,
is defined as,
a = KEA - KEP = BEP - BEA
(2)
or as the difference in binding energy between the
photoelectron and Auger lines. This difference can be
accurately determined because static charge corrections
cancel. With all kinetic and binding energies referenced
to the Fermi level, and recalling that:
KE = hv - BE
then...
KEA + BEP = hv + a
(3)
(4)
or the sum of the kinetic energy of the Auger line and
the binding energy of the photoelectric line equals the
Auger parameter plus the photon energy. A plot showing
Auger kinetic energy versus photoelectron binding ener-
gy then becomes independent of the photon energy.
In general, polarizable materials, especially conductive
materials, have a high Auger parameter, while insulating
compounds have a lower Auger parameter.
d. Chemical Information from Satellite Lines and
Peak Shapes
(1) Shake-up Lines. These satellite lines have in-
tensities and separations from the parent
photoelectron line that are unique to each chemical
state (Figure 8, p. 19). Some Auger lines also ex-
hibit radical changes with chemical state that
reflect these processes (Figure 9, p. 20). With tran-
sition elements and rare earths, the absence of
shake-up satellites is usually characteristic of the
elemental or diamagnetic states. Prominent shake-
up patterns typically occur with paramagnetic
states. Table 4 is a guide to some expected
paramagnetic states.
Table 4. General Guide to Paramagnetic Species
Multiplet splitting and shake-up lines are generally expected in the paramag-
netic states below:
Atomic No.
22
23
24
25
26
27
28
29
42
44
47
58
59-70
74
75
76
77
92
Paramagnetic States
Ti(II) Ti(III)
V(II), V(III), V(IV)
Cr(II), Cr(III), Cr(IV), Cr(V)
Mn(II), Mn(III), Mn(IV), Mn(V)
Fe(II), Fe(III)
Co(II), Co(III)
Ni(II)
Cu(II)
Mo(IV), Mo(V)
Ru(ni), Ru(IV), Ru(V)
Ag(II)
Ce(III)
Pr, Nd, Sm, Eu, Gd, Tb, Dy,
Ho, Er, Tm, Yb compounds
W(IV), W(V)
Re(II), Re(III), Re(IV),
Re(V), Re(VI)
Os(III), Os(IV), Os(V)
Ir(IV)
U(III), U(IV)
Diamagnetic States
Ti(IV)
V(V)
Cr(VI)
Mn(VII)
K4Fe(CN)6, Fe(CO)4Bi2
CoB, Co(NO2)3NH3)3
K3Co(CN)6, Co(NH3)6a3
K2Ni(CN)4,
square planar complexes
Cu(I)
Mo(VI), MoS2, K4Mo(CN)g
Ru(II)
Ag(I)
Ce(IV)
W(VI), WO2, WCU,
WC, K4W(CN)8
Re(VII), ReO3
Os(II), Os(VI), Os(VIII)
Ir(HI)
U(VI)
(2) Multiplet Splitting. On occasion, the multiplet
splitting phenomenon can also be helpful in iden-
tifying chemical states. The 3s lines in the first
series of transition metals, for example, exhibit
separations characteristic of each paramagnetic
chemical state. The 3s line, however, is weak and
therefore is not often useful analytically. The 2p
doublet separation is also affected by multiplet
splitting, and the lines are more intense. The effect
becomes very evident with Co compounds where
the separation varies up to 1 eV. When first-row
transition metal compounds are under study, it is
24
PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
E. Data Interpretation
useful to accurately record these line separations
and make comparisons with model compounds.
(3) Auger Line Shape. Valence-type Auger transi-
tions form final-state ions with vacancies in
molecular orbitals. The distribution of the group of
lines is strongly affected, therefore, by the nature
of the molecular orbitals in the different chemical
states. Although little has yet been tabulated on
this subject, the spectroscopist should bear in mind
the possible utility of Auger line shapes.
4. Quantitative Analysis
For many XPS investigations, it is important to deter-
mine the relative concentrations of the various con-
stituents. Methods have been developed for quantifying
the XPS measurement utilizing peak area and peak
height sensitivity factors. The method which utilizes
peak area sensitivity factors typically is the more ac-
curate and is discussed below. This approach is satisfac-
tory for quantitative work. For transition metal spectra
with prominent shake-up lines, it is best to include the
entire 2p region when measuring peak area.
For a sample that is homogeneous in the analysis
volume, the number of photoelectrons per second in a
specific spectra peak is given by:
I = nfoGy^AT
(5)
where n is the number of atoms of the element per cm3
of the sample, f is the x-ray flux in photons/cm2-sec, o
is the photoelectric cross-section for the atomic orbital of
interest in cm2, 9 is an angular efficiency factor for the
instrumental arrangement based on the angle between
the photon path and detected electron, y is the efficiency
in the photoelectric process for formation of
photoelectrons of the normal photoelectron energy, X is
the mean free path of the photoelectrons in the sample,
A is the area of the sample from which photoelectrons
are detected, and T is the detection efficiency for
electrons emitted from the sample. From Equation 5:
n = I/fo9y>AT
(6)
The denominator in Equation 6 can be defined as the
atomic sensitivity factor, S. If we consider a strong line
from each of two elements, then:
n2
Ii/Si
I2/S2
(7)
This expression may be used for all homogeneous
samples if the ratio S1/S2 is matrix-independent for all
materials. It is certainly true that such quantities as a
and X vary somewhat from material to material (espe-
cially X), but the ratio of each of the two quantities O\/G2
and X\/X2 remains nearly constant. Thus, for any
spectrometer, it is possible to develop a set of relative
values of S for all of the elements. Multiple sets of
values may be necessary for instruments with multiple
x-ray sources at different angles relative to the analyzer.
A general expression for determining the atom fraction
of any constituent in a sample, Cx, can be written as an
extension of Equation 7:
(8)
Values of S based on peak area measurements are indi-
cated in Appendices E and F. The values of S in the
appendices are based on empirical data (CD. Wagner et
al. Surf. Interface Anal. 3, 211 (1981)) which have been
corrected for the transmission function of the
spectrometer. The values in the appendix are only valid
&>r and should only be applied when the electron energy
analyzer used has the transmission characteristics of the
SCA supplied by Physical Electronics. An example
of the application of Equation 8 to analysis of a
<D PHYSICAL ELECTRONICS
25

E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
F Is
Atomic Concentration
Theoretical Experimental
C 33 33
F 67 67
C Is
JU
1100
Binding Energy (eV)
Figure 13. Quantitative analysis of poly(tetrafluoroethylene).
sample of known composition, poly(tetrafluoroethylene),
is shown in Figure 13.
The use of atomic sensitivity factors in the manner
described will normally furnish semiquantitative results
(within 10-20%), except in the following situations:
a. The technique cannot be applied rigorously to
heterogeneous samples. It can be useful with
heterogeneous samples in measuring the relative number
of atoms detected, but one must be conscious that the
microscopic character of the heterogeneous system in-
fluences the quantitative results. Moreover, an overlying
contamination layer has the effect of diminishing the in-
tensity of high binding energy peaks more than that of
low binding energy peaks.
b. Transition metals, especially of the first series, have
widely varying and low values of y, whereas y for the
other elements is rather uniform at about 0.8 eV. Thus, a
value of S determined on one chemical state for a transi-
tion metal may not be valid for another chemical state.
This effect can be minimized by including shake-up
peaks in the area measurement.
c. When peak interferences occur, alternative lines must
sometimes be used. The ratios of spin doublets (except
4p) are rather uniform, and the weaker of the pair can
often be substituted. The spectra of the elements should
be consulted, but caution must be exercised because the
spectra of the elements themselves can be different from
the spectra of their compounds.
d. Occasionally, an x-ray satellite from an intense
photoelectron line interferes with measurement of a
weak component. A mathematical approach can then be
used to subtract the x-ray satellite before the measure-
ment.
For quantitative work, check the spectrometer operation
frequently to ensure that analyzer response is constant
and optimum. A useful test is the recording of the three
widely spaced spectral lines from Cu. Measurement of
the peak height in counts-per-second should be made on
20-volt-wide scans of the 2p3/2, LMM Auger and 3p
lines. Maintenance of such records makes it easy to
notice if an instrument change occurs that would affect
quantitative analysis.
5. Determining Element Location
a. Depth. There are four methods of obtaining informa-
tion on the depth of an element in the sample. The first
two methods described below utilize the characteristics
of the spectrum itself but provide limited information.
The third provides more detailed information but is at-
tended by certain problems. The fourth utilizes measure-
ments at two or more electron escape angles.
26
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
E. Data Interpretation
(1) The presence or absence of an energy loss peak
or envelope indicates whether the emitting atoms
are in the bulk or at the surface. Because electrons
from surface atoms do not traverse the bulk, peaks
from the surface atoms are symmetrical above
level baselines on both sides, and the energy loss
peak is absent. For a homogeneous sample, peaks
from all elements will have similar inelastic loss
structures.
(2) Elements whose spectra exhibit photoelectron
lines widely spaced in kinetic energy can be ap-
proximately located by noting the intensity ratio of
the lines. In the energy range above approximately
100 eV, electrons moving through a solid with
lower kinetic energy are attenuated more strongly
than those with higher kinetic energy. Thus, for a
surface species, the low kinetic energy component
will be relatively stronger than the high kinetic
energy component, compared to that observed in
the pure material. The data for homogeneous bulk
solids can be compared with intensity ratios ob-
served on unknowns to determine qualitatively the
distribution of the element in the sample. Suitable
elements include Na and Mg (Is and 2s); Zn, Ga,
Ge and As (2p3/2 and 3d); and Cd, In, Sn, Sb, Te,
I, Cs and Ba (3p3/2 and 4d or 3ds/2 and 4d).
When the element is in a bulk homogeneous layer
beneath a thin contaminating layer, the charac-
teristic intensity ratio is modified in the opposite
direction. Thus, for a pair of lines from subsurface
species, the low kinetic energy line will be at-
tenuated more than the high kinetic energy line,
distorting the characteristic intensity ratio. By ob-
serving such intensity ratios and comparing them
with the pure bulk elements, it is possible to
deduce whether the observed lines are from
predominantly surface-, subsurface- or homo-
geneously distributed material.
(3) Depth profiling can be accomplished using
controlled erosion of the surface by ion sputtering.
Table 5 lists some data on sputter rates as a
general guide. One can use this technique on or-
ganic materials, but few data are available for
calibration. Chemical states are often changed by
the sputter technique, but useful information on
elemental distribution can still be obtained.
Table 5. Relative Sputter Rates at 4 kV
Target
Ta2O5
Si
SiO2
Pt
Cr
Al
Au
Sputter Rate
1.00
0.90
0.85
2.20
1.40
0.95
4.10
Another useful method of controlled erosion, espe-
cially of organic materials, is reaction with oxygen
atoms from a plasma. This technique may also
change the chemical states in the affected surface.
Further, because the elements differ in their rates
of reaction with oxygen atoms, the rate of removal
of surface materials will be sample dependent.
(4) In XPS studies, the sample-mounting angle is
not usually critical, though it does have some ef-
fect on the spectra. Very shallow electron take-off
angles accentuate the spectrum of any component
segregated on the surface, whereas a sample
mounted at an angle normal to the analyzer axis
minimizes the contribution from such a com-
ponent. This effect can be used to estimate the
depth of layers on or in the surface. This effect is
not limited to flat surfaces, because angular de-
pendence is even observed with powders, though
the effects are muted. The spectrometer used to
obtain the spectra presented in this handbook in-
<D PHYSICAL ELECTRONICS
27

E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
tegrates the signal over only a narrow range of
take-off angles.
It is possible to change the angle between the
plane of the sample surface and the angle of
entrance to the analyzer. At 90° with respect to the
surface plane, the signal from the bulk is maxi-
mized relative to that from the surface layer. At
small angles, the signal from the surface becomes
greatly enhanced, relative to that from the bulk.
The location of an element can thus be deduced by
noting how the magnitude of its spectral peaks
changes with sample orientation in relation to
those from other elements. The analysis depth may
be estimated by d = ?isin0, where d is the analysis
depth of the overlayer, X is the inelastic mean free
path, and 6 is the take-off angle of the analyzed
electrons.
Physical Electronics SCAs permit angle-dependent
studies by simply varying the angle of the sample
surface with respect to the input lens of the
analyzer. The magnification of the lens determines
the half-angle acceptance of the analyzer. An ex-
ample of the information that can be gained
through the use of this capability is shown in Fig-
ure 14. Data were obtained at normal (near 90°)
and grazing (near 15°) take-off angles from a
silicon sample with a thin silicon oxide overlayer.
The observed intensity ratio of oxidized to elemen-
tal Si is much greater at the low take-off angle.
b. Surface Distribution. Many XPS systems have the
capability to obtain data from areas as small as 30 |nm in
diameter using lens defined areas. Alternately, analysis
areas of < 10 |um can be achieved with a scanning
focused photo beam. These relatively high lateral resolu-
tions allow for the acquisition of XPS maps which show
both elemental and chemical state information.
Binding Energy (eV)
Figure 14. An example of the enhanced surface sensitivity achieved by vary-
ing the electron take-off angle. A thin oxide on silicon is enhanced at the low
take-off angle.
c. Insulating Domains on a Conductor. The occur-
rence of steady-state charging of an insulator during
analysis sometimes has useful consequences. Micro-
scopic insulating domains on a conductor reach their
own steady-state charge, while the conductor remains at
spectrometer potential. Thus, an element in the same
chemical state in both phases will exhibit two peaks. If a
change is made in the supply of low-energy electrons
which stabilize the charge (as from the neutralizer fila-
ment) or if a bias is applied to the conductor, the
spectral peaks from the insulating phase will move rela-
tive to those from the conducting phase. For such
heterogeneous systems, this can be an extremely useful
technique. It makes it possible to determine whether the
elements that contribute to the overall spectrum are in
the conducting phase, the insulating phase or both.
28
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
F. How to Use this Handbook
F. How to Use this Handbook
1. Qualitative Analysis
Elemental and chemical identification of sample con-
stituents can be performed by combining the information
in the survey spectra with the binding energy tables of
Appendices G, H and J.
a. Identify all major photoelectron peaks by using the
line position tables in Appendix J.
b. Compare the elemental identifications with the
elemental survey spectra to see that line positions and
relative intensities are consistent. Also note the positions
of the Auger electron peaks.
c. Review Section E (pp. 16-28) to account for fine
structures such as energy loss lines, shake-up peaks,
satellite lines, etc., not identified in the handbook spectra
or energy tables.
d. Identify any remaining peaks assuming they are in-
tense photoelectron or Auger lines using Appendices G
orH.
e. Chemical state identification can be determined from
high resolution spectra of the strongest photoelectron
and sharpest Auger lines.
(1) Correct binding energies for static charging of
insulators. When applicable, charge reference the
binding energy scale to the C Is photoelectron
peak at 284.8 eV.
(2) Determine the chemical state from the
measured shifts in the photoelectron binding ener-
gies by comparing the binding energy to the charts
with the standard spectra and with the tabulated
data in Appendix B.
(3) As suggested above, much about the chemical
state can be learned from the magnitude and posi-
tion of shake-up lines as well as from the energy
and shape of valence Auger lines.
(4) For the elements F, Na, Al, Si, S, Cu, Zn, As,
Se, Ag, Cd, In, Sn and Te, the Auger parameter
tables in Appendix A may prove useful. The Auger
line positions may be converted to kinetic energy
by subtracting from the photon energy (Al =
1486.6 eV, Mg = 1253.6 eV). Note the location of
the points for Auger kinetic energy and
photoelectron binding energy on the respective
elemental plot. Proximity of the experimental
points to those of recorded chemical states should
be considered probable identification. Note that
experimental error is much greater along the Auger
parameter grid than normal to the grid lines.
2. Quantification
The atomic sensitivity factors presented in Appendices E
and F are applicable to the Physical Electronics Model
10-360 SCA and the Omni Focus III lens. A simplified
expression to determine the atomic concentration of any
element is given by Equation 8 (p. 25). However, the
accuracy is limited by the assumptions made in Section
E.4. (p. 25).
<D PHYSICAL ELECTRONICS
29

II. Standard XPS Spectra of the Elements

Standard Spectra of the Elements
This section of the handbook contains survey spectra of 81 elements, high resolution spectra of the most useful photoelectron lines, a chart of binding
energies for each of the observed photoelectron and major Auger electron peaks, and a photoelectron chemical state binding energy chart for each of
the elements. Used in combination with the appendices, the survey spectra aid in elemental identification, while the high-resolution spectra and binding
energy data aid in the identification of chemical states.
Survey Spectra
The survey data include all of the lines which are normally useful. For
most elements, the survey data were acquired with both a
monochromatic Al x-ray source and a nonmonochromatic Mg x-ray
source. When survey spectra for two compounds are presented, the
monochromatic source is used for both. The photon source for each
survey is noted on the survey. The photoelectron and Auger lines for
the element of interest are identified. Lines which occur due to other
elements are only designated by the elemental symbol, and x-ray
satellites and energy loss lines are not noted. For many elements, the
Auger peaks are presented in expanded form.
The ordinate is left undesignated, but the general contours and inten-
sity ratios of the spectra are typical of measurements made using a
Physical Electronics Model 10-360 SCA with an Omni Focus lens.
High-Resolution Spectra
The high-resolution spectra of the most useful photoelectron peaks are
presented. Unless otherwise noted, the high-resolution data were ac-
quired using the same photon source as the survey on the same page.
The binding energy of the main line is noted and when appropriate, the
spin orbit separation (A) is given. The lines from insulators were
charge-corrected to adventitious hydrocarbon at 284.8 eV.
The spectra of the inert gas atoms implanted in graphite or silicon
deserve special mention. The high-resolution data often show an
asymmetric peak shape or a second resolvable peak when a single
symmetric peak is expected. The intensity of the second, high binding
energy peak is dependent on the implantation energy and is
diminished at lower energies. The spectra are of inert gas atoms im-
planted at 4 kV.
Photoelectron and Auger Electron Line Position Tables
The photoelectron and Auger line position tables reflect the energies
of the elemental peaks observed in this handbook. For oxidized or
reduced species, the measured values may differ by a few electron volts.
Chemical State Binding Energy Tables
The binding energy tables have been constructed to reflect the general
changes in binding energy with change in oxidation state or chemical
environment. A more extensive listing with specific binding energy
values for more than 1500 compounds is presented in Appendix B.
Abbreviations in the chemical state database are as follows: acac =
acetyl acetonate; metallocene = metal (C5H5)2; Bu = butyl; Et = ethyl;
Me = methyl; Ph = phenyl; OAc = acetate.
(D PHYSICAL ELECTRONICS
33

Lithium Li
Atomic Number 3
Handbook of X-ray Photoelectron Spectroscopy
Li in LiF
Monochromated Al Ka
Is
1400 1200 1000
800 600
Binding Energy (eV)
400
200 0
Binding Energy (eV)
Photoelectron
Lines
Line
Is
56
Positions
(eV)
34
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Lithium Li
Atomic Number 3
F
Li in LiF
MgKa
F
F
F
is
\—* ^ . . . jlXa
1200
1000
800
600 400
Binding Energy (eV)
200
Is Binding Energy (eV)
Compound Type 54 55 56
57
Li
LiBr
LiCl
LiF
Li2O
LiOH
Li2CO3
Li3PO4
LUP2O7
LiNbO3
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
35

Beryllium Be
Atomic Number 4
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
KVV
1410
1390
Binding Energy (eV)
1370
Ar
Is
I —U
1400 1200 1000
800 600
Binding Energy (eV)
400 200
115
Binding Energy (eV)
105
Photoelectron Lines
Auger Lines
Line
Is
112
KVV
1384
1151
Positions (eV)
(Al)
(Mg)
36
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Beryllium Be
Atomic Number 4
Mg Ka
\
TL KVV
\
1175
Fe
1155
Binding Energy (eV)
O
KVV
1135
Ar
•
Is
L-—a
1200
1000
800 600 400
Binding Energy (eV)
200
Is Binding Energy (eV)
Compound Type 111 112 113 114 115 116
117
Be
BeO
BeMoO4
BeRh2O4
BeF2
NaBeF3
Na2BeF4
■
-
125
115
Binding Energy (eV)
PHYSICAL ELECTRONICS
37

Boron B
Atomic Number 5
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400 1200 1000
800 600
Binding Energy (eV)
400 200
200
190
Binding Energy (eV)
Photoelectron Lines
Auger Lines
Line
Is
189
KLL
1310
1077
Positions (eV)
(Al)
(Mg)
38
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Boron B
Atomic Number 5
1200
1000
800
600
Binding Energy (eV)
400
Is Binding Energy (eV)
Compound Type 186 188 190 192 194 196
B
Boride
BN
B2O3
NaBF4
NaBH4
H3BO3
Na2B4O7- IOH2O
B10H14
"
200
190
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
39

Carbon C
Atomic Number 6
Handbook of X-ray Photoelectron Spectroscopy
C as graphite
Monochromated Al Ka
KVV
1250
1200
Binding Energy (eV)
Is
v ■
1400 1200 1000
800 600
Binding Energy (eV)
400 200
295
285
Binding Energy (eV)
275
Photoelectron Lines
Auger Lines
Line
Is
285
KVV
1223
990
Positions (eV)
(Al)
(Mg)
40
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Carbon C
Atomic Number 6
C as graphite
MgKa
KVV
1200
1000
1020
Binding Energy (eV)
Is
800 600
Binding Energy (eV)
400
200
Is Binding Energy (eV)
Compound Type 280 282 284 286 288 290 292 294
Carbide
Carbon
C with N
C with S
C with O
Alcohols
Ethers
Ketones/Aldehydes
Carboxyls
Carbonates
C with Cl
C with F
CHF
CF2
CF3
m
295
285
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
41

Nitrogen N
Atomic Number 7
Handbook of X-ray Photoelectron Spectroscopy
NinBN
Monochromated Al Ka
1160
KLL
1120
Binding Energy (eV)
1080
1400 1200 1000
Is
800 600
Binding Energy (eV)
400 200 0
410
400
Binding Energy (eV)
390
Photoelectron Lines
Auger Lines
Line
Is
398
KLL
1107
874
Positions (eV)
(Al)
(Mg)
42
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Nitrogen N
Atomic Number 7
Is
I
1200
1000
800 600
Binding Energy (eV)
400
200
0
Is Binding Energy (eV)
Compound Type 396 398 400 402 404 406 408 410
NH3
Nitride
BN
Si3N4
Cyanides
Nitrites
Ammonium Salt
Azide(N*NN*)
Azide (NN*N)
Nitrates
Organic Matrix
410
400
Binding Energy (eV)
390
<D PHYSICAL ELECTRONICS
43

Oxygen O
Atomic Number 8
Handbook of X-ray Photoelectron Spectroscopy
O in AI2O3 (sapphire)
Monochromated Al Ka
1030
990
Binding Energy (eV)
KLL
950
Is
Al
Ar
Al
2s
1400
1200
1000
800 600
Binding Energy (eV)
400
200
535
Binuuig Energy (eV)
525
Photoelectron Lines
Is
531
Auger Lines
KL1L1
1013
780
Line Positions (eV)
2s
23
KL1L23
999
766
KL23L23
978
745
(Al)
(Mg)
44
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Oxygen O
Atomic Number 8
Is
O in AI2O3 (sapphire)
MgKa
KLL
KLL
Al Al
Ar
Ar
2s
1200 1000
800 600
Binding Energy (eV)
400
200
Is Binding Energy (eV)
Compound Type 528 529 530 531 532 533 534
535
Binding Energy (eV)
525
<D PHYSICAL ELECTRONICS
45

Fluorine F
Atomic Number 9
Handbook of X-ray Photoelectron Spectroscopy
F in LiF
Monochromated Al Ka
Is
KLL
845
825
Binding Energy (eV)
T.2s
Jli „
1400 1200
1000
800 600
Binding Energy (eV)
400
200
700
690
Binding Energy (eV)
680
Photoelectron Lines
Is
685
Auger Lines
KL,L,
877
644
Line Positions (eV)
2s
30
KL1L23
858
625
KL23L23
832
599
(Al)
(Mg)
46
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Fluorine F
Atomic Number 9
1200
1000
800
600
Binding Energy (eV)
400
200
F in LiF
MgKa
Is
—-—~~-A
u
K
i 1
m
-- -——
LL 615
\ H
j
L
595
Binding Energy (eV)
KLL
575
.. 2s
Li
■ K.Xa
0
Is Binding Energy (eV)
Compound Type 683 684 685 686 687 688 689
KF
LiF
NaF
BaF2
A1F3 • 3H2O
NaBF4
Na2SiF6
p-(CF2=CF2)
EtNH2BF3
Ph3PBF3
1-
690
Binding Energy (eV)
680
<B PHYSICAL ELECTRONICS
47

Neon Ne
Atomic Number 10
Handbook of X-ray Photoelectron Spectitacopy
Ne implanted in graphite
Monochromated Al Ka
C
~~'~\ __— —-~~
1 — I
KLL
SJ 1
730
Binding Energy (eV)
Is
KLL
———M „ ^—-
—^
■
660
—A
2s c
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
865
Binding Energy (eV)
855
Photoelectron
Auger Lines
Lines
Is
863
KLjLi
725
492
Line Positions (eV)
2s
41
KL1L23
702
469
2p
14
KL23L23
669
436
(Al)
(Mg)
48
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Neon Ne
Atomic Number 10
Ne implanted in graphite
MgKa
KLL
Is
KLL
2s C
1200
1000
800 600 400
Binding Energy (eV)
200
Is Binding Energy (eV)
Compound Type 861 862 863
864
Ne in Ag
Ne in Au
Ne in Cu
Ne in Fe
Ne in graphite
875
865
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
49

Handbook of X-ray Photoelectron Spectroscopy
Sodium Na
Atomic Number 11
Monochromated Al Ka
1400 1200 1000
800 600
Binding Energy (eV)
400 200
ls= 1071.8 eV
Plasmon
Is
1085
1075
Binding Energy (eV)
1065
Photoelectron
Auger Lines
Lines
Is
1072
KLjLi
561
328
Line Positions (eV)
2s
64
KL1L23
532
299
2p
31
KL23L23
493
260
(Al)
(Mg)
50
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Sodium Na
Atomic Number 11
Na in NaCl
Monochromated Al Ka
Is
Cl
KLL
KLL
480
Binding Energy (eV)
Cl
2s
1400 1200 1000
800 600
Binding Energy (eV)
400 200
Is Binding Energy (eV)
Compound Type 1070 1071 1072
1073
Na
Nal
NaBr
NaCl
NaF
Na2CO3
Na2S2O3
Na2SO4
NaH2PO4
Mol Sieve
Is
Na in NaCl
ls= 1072.1 eV
1085
1075
Binding Energy (eV)
1065
<D PHYSICAL ELECTRONICS
51

Magnesium Mg
Atomic Number 12
Handbook of X-ray Photoelectron Spectroscop
Is
Monochromated Al Ka
KLL
390
340
Binding Energy (eV)
290
KLL
1400 1200
1000
800 600
Binding Energy (eV)
400 200
Binding Energy (eV)
Photoelectron
Auger Lines
Lines
Is
1303
KL1L1
381
148
Line Positions (eV)
2s
89
KL1L23
347
114
2p
50
KL23L23
301
68
(Al)
(Mg)
52
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Magnesium Mg
Atomic Number 12
Plasmon from 2p
2s
KLL
2p
1200
1000
800
600
Binding Energy (eV)
400
200
2p Binding Energy (eV)
Compound Type 48 49 50
Mg
Mg2Cu
Mg3Bi2
MgF2
Mg(OH)2
MgAl2O4
51
"
40
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
53

Aluminum Al
Atomic Number 13
Monochromated Al Ka
1400 1200 1000
Handbook of X-ray Photoelectron
800 600
Binding Energy (eV)
2s
400 200
Binding Energy (eV)
Photoelectron Lines
2s
118
Auger Lines
Line Positions (eV)
L23M1M23
1419
1186
2p
73
(Al)
(Mg)
54
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Aluminum Al
Atomic Number 13
1200
1000
800 600
Binding Energy (eV)
400
200
2p Binding Energy (eV)
Compound Type 72 73 74 75 76 77
Al
AlAs
AlGaAs
UAIH4
Halides
AIF3
Oxides
AI2O3, sapphire
AI2O3, alpha
AI2O3, gamma
A1OOH, boehmite
1-
P
■I
Al in AI2O3 (sapphire)
Monochromated Al Koc
2p = 74.4 eV
85
75
Binding Energy (eV)
65
<D PHYSICAL ELECTRONICS
55

Silicon Si
Atomic Number 14
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
LMM
1400 1200 1000
800 600
Binding Energy (eV)
400 200
100
Binding Energy (eV)
90
Photoelectron
Auger Lines
Lines
2s
151
Line ]
^sitions (eV)
2p
99
L23M23M23
1394
1161
(Al)
(Mg)
56
<& PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Silicon Si
Atomic Number 14
1200
1000
600
Binding Energy (eV)
400
200
2p Binding Energy (eV)
Compound Type 98 101 104
Silicides
Silicon
Carbides
Nitrides
Silicones (Silanes)
Silicates
Silica
L
110
Si in SiO2
Monochromated Al Koc
2p = 103.3 eV
100
Binding Eneigy (eV)
90
<D PHYSICAL ELECTRONICS
57

Phosphorus P
Atomic Number 15
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
LMM
1400
1370
Binding Energy (eV)
1340
2s
2p
1400 1200 1000
800 600
Binding Energy (eV)
400 200
2p3/2 = 129.9 eV
A = 0.84 eV
140
130
Binding Energy (eV)
120
Photoelectron
Auger Lines
Lines
2s
188
Line
2pi/2
131
Positions
2p3/2
130
L23M23M23
1367 (Al)
1134 (Mg)
(eV)
3s
14
58
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Phosphorus P
Atomic Number 15
MgKa
LMM
1170
1140
Binding Energy (eV)
1110
O
1200
1000
800 600
Binding Energy (eV)
400
200
2p Binding Energy (eV)
Compound Type 128 129 130 131 132 133 134 135
P
P (red)
GaP
InP
Phosphate
Pyrophosphate
Metaphosphate
P4O10
Ph3P
PhzPSH
(PhObPO
t
2p3/2 = 129.9 eV
A = 0.84 eV
140
2p3/2
130
Binding Energy (eV)
120
<D PHYSICAL ELECTRONICS
59

Sulfur S
Atomic Number 16
Monochromated Al Ka
1370
Handbook of X-ray Photoelectron Spectroscopj
LMM
1400 1200 1000
1340
Binding Energy (eV)
1310
800 600
Binding Energy (eV)
400 200
2p3/2 = 164.0 eV
A= 1.18 eV
175
165
Binding Energy (eV)
155
Photoelectron
Auger Lines
Lines
2s
228
Line
2pl/2
165
Positions
2p3/2
164
L23M23M23
1336 (Al)
1103 (Mg)
(eV)
3s
18
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Sulfur S
Atomic Number 16
1200
1000
600
Binding Energy (eV)
2p3/2 Binding Energy (eV)
Compound Type 160 163 166 169 172 175 178
S
Sulfide
Sulfite
Sulfate
SF6
SO2
Thiophene
Mercaptan
Cysteine
Sulfone
II
wM J
mm
■■
■
2p3/2 = 164.0 eV
A= 1.18 eV
2p3/2
175
165
Binding Energy (eV)
155
<D PHYSICAL ELECTRONICS
61

Chlorine Cl
Atomic Number 17
Handbook of X-ray Photoelectron Spectroscopy
Cl in KC1
Monochromated Al Ka
1400 1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 198.5 eV
A= 1.60 eV
215
205
Binding Energy (eV)
195
Photoelectron
Auger Lines
Lines
2s
271
Line
2pi/2
201
Positions
2p3/2
199
L23M23M23
1304 (Al)
1071 (Mg)
(eV)
3s
17
3p
6
62
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Chlorine Cl
Atomic Number 17
Cl in KC1
MgKa
K
LMM
K
1100
1050
Binding Energy (eV)
K
K
Br
3p
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound Type 198 200 202 204 206 208 210
Alkali Chloride |H 1
CuCh ■
NiCh ■
PdCl2 [■
K2IrCl6 ■
Pt(NH3)2Cl2 [■
Perchlorate
KC1O3
NaClO4
C6H5C1
p(CH2=CHCl)
■r
■
H
■
2p3/2 = 198.5 eV
A= 1.60 eV
215
2p:
(3/2
205
Binding Energy (eV)
195
<D PHYSICAL ELECTRONICS
63

Argon Ar
Atomic Number 18
Handbook of X-ray Photoelectron Spectroscope
Ar implanted in Si
Monochromated Al Ka
Si
2s
1400 1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 241.9 eV
A = 2.12eV
255
245
Binding Energy (eV)
235
Line Positions (eV)
Photoelectron Lines
2s 2pi/2
320 244 242
3s
24
Auger Lines
L23M23M23
1272 (Al)
1039 (Mg)
64
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Argon Ar
Atomic Number 18
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
2p3/2 Binding Energy (eV)
240 241 242
Arin Ag
Arin Au
Arin Cu
ArinPt
Ar in graphite
Arin Si
2p3/2 = 241.9 eV
A = 2.12eV
255
245
Binding Energy (eV)
235
<D PHYSICAL ELECTRONICS
65

Potassium K
Atomic Number 19
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400 1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2
A = 2
^—-
= 294.4 eV
.80 eV
Plasmon
/-^
Plasmon
/ \
Plasmon \
\
J '
2P1/2
/|2p3/2
I
310
300
Binding Energy (eV)
290
Photoelectron
Auger Lines
Lines
2s
380
Line
2pi/2
297
Positions
2P3/2
294
L23M23M23
1239 (Al)
1006 (Mg)
(eV)
3s
35
3p
19
66
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Potassium K
Atomic Number 19
K in KC1
Monochromated Al Ka
Cl LMM
2s
Cl
Cl
3p
3s
Br
Cl
1400 1200 1000
800 600
Binding Energy (eV)
400 200
2p3/2 Binding Energy (eV)
Compound Type 291 292 293 294 295
K
Halides
KCN
KNO3
KCIO3
KCIO4
K3PO4
K4P2O7
K2C1O4
K2Cr207
i
H
r.
-
-
K in KC1
2p3/2 = 292.9 eV
A = 2.77 eV
2p3/2/
310
300
Binding Energy (eV)
290
<D PHYSICAL ELECTRONICS
67

Handbook of X-ray Photoelectron Spectroscope
Calcium Ca
Atomic Number 20
Monochromated Al Ka
1400 1200 1000
800 600
Binding Energy (eV)
400 200
2p3/2 = 346.7 eV
A = 3.60 eV
Plasmon,,
350
Binding Energy (eV)
340
Photoelectron
Auger Lines
Lines
2s
440
Line'.
2pl/2
351
Positions
2p3/2
347
L23M23M23
1197 (Al)
964 (Mg)
(eV)
3s
45
3p
26
68
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Calcium Ca
Atomic Number 20
Ca in CaC03
Monochromated Al Ka
LMM
V^———~-"~~*
o
L ——^
o
V
2p
2pi/2
2s
J
>3/2
c
3P
1400
1200 1000
800 600
Binding Energy (eV)
400 200
0
2p3/2 Binding Energy (eV)
Compound Type 345 346 347 348 349
Ca
CaS
CaCl2
CaF2
CaO
CaCO3
Ca(NO3)2
CaCrO4
CaMoO4
CaSO4
112
■T
p: 1 |
2p3/2 = 346.6 eV
A = 3.55 eV
350
Binding Energy (eV)
340
<D PHYSICAL ELECTRONICS
69

Scandium Sc
Atomic Number 21
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200 1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 398.6 eV
A = 4.87 eV
2p3
410
400
Binding Energy (eV)
390
Photoelectron Lines
2s
499
Auger Lines
LM23M23
1149
916
Line Positions
2pi/2 2p3/2
404 399
L3M23M45 (!I
1118
885
(eV)
3s
51
>)
(Al)
(Mg)
3p
29
70
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Scandium Sc
Atomic Number 21
1200
1000
800
600
Binding Energy (eV)
400
2p3/2 Binding Energy (eV)
Compound T>pe 398 399 400 401 402
Sc
ScN
Sc2O3
ClSc(C5H5)2
Sc(C5H5)(C8H8)
m
i
Sc in SC2O3
Monochromated Al Koc
2p3/2 = 401.8 eV
A = 4.4 eV
400
Binding Energy (eV)
390
<D PHYSICAL ELECTRONICS
71

Handbook of X-ray Photoelectron Spectroscoi
Titanium Ti
Atomic Number 22
ipy
Monochromated Al Ka
2pi/2
1080
1065
Binding Energy (eV)
1050
2s
LMM
2p3/2
3p
1400 1200 1000
800 600
Binding Energy (eV)
400 200
2p3/2 = 454.1 eV
A = 6.17eV
2p
1/2
470
460
Binding Energy (eV)
450
Photoelectron Lines
2s
561
Auger Lines
LM23M23
1098
865
Line Positions
2pl/2 2p3/2
460 454
L3M23M45 (!I
1068
835
(eV)
3s
59
D)
(Al)
(Mg)
3p
33
72
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Titanium Ti
Atomic Number 22
1200
1000
800
600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound TYpe 453 454 455 456 457 458 459 460
Ti
TiB2
TiN
TiCU
TiO
TiO2
BaTiCb (cubic, tetra.)
CaTiO3
PbTiO3
SrTiO3
Metallocene
Ti in T1O2
Monochromated Al Kcc
2p3/2 = 458.8 eV
A = 5.54 eV
2p3
470
460
Binding Energy (eV)
450
<D PHYSICAL ELECTRONICS
73

Vanadium V
Atomic Number 23
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
2pi/2
1030
1015
Binding Energy (eV)
1000
LMM
1400
1200
1000
2p3/2
800 600
Binding Energy (eV)
400
200
2p3/2 = 512.2
A = 7.64 eV
——
eV
2pi/2A
2p3/2
/
1
535
515
Binding Energy (eV)
495
Photoelectron Lines
2s
627
Auger Lines
L23M23M23
1048
815
Line ]
2pl/2
520
Positions
2P3/2
512
L3M23M45 (*F
1014
781
(eV)
3s
66
>)
3p
37
L3M45M45
977
744
(Al)
(Mg)
74
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Vanadium V
Atomic Number 23
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound Type 512 513 514 515 516 517
518
535
V in V2O5
Monochromated Al Ka
2p3/2 = 517.4 eV
A = 7.6 eV
520
Binding Energy (eV)
505
CD PHYSICAL ELECTRONICS
75

Chromium Cr
Atomic Number 24
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
.
—A
975
Bine
960
iing Energy (eV)
LMM
■—
LMM
2pl/2
945
JJ
2p3/2
0
———■
Ar
i
Ar
A —
3d
3s
L
1400 1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 574.4 eV
A = 9.20 eV
595
2p3
Binding Energy (eV)
570
Line Positions (eV)
Photoelectron Lines
2s
696
2pi/2
583
574
3s
75
3p
43
Auger Lines
L23M23M23 L3M23M45 (!P)
997 959
764 726
L3M45M45
917 (Al)
684 (Mg)
76
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Chromium Cr
Atomic Number 24
1200
1000
600
Binding Energy (eV)
2p3/2 Binding Energy (eV)
Compound Type 574 576 578 580 582
Cr
Cr Nitride
CrBr3
C1CI3
Oxide
CrF3
Cr(OH)3
CrOOH
K2Cr207
K3Cr(CN)6
Cr(acac>3
1 .
■
■
m
11
7
Cr in Cr2O3
Monochromated Al Ka
2p3/2 = 576.9 eV
A = 9.8 eV
570
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
77

Manganese Mn
Atomic Number 25
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200 1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 639.0 eV
A= 11.05 eV
2p3
660
645
Binding Energy (eV)
630
Photoelectron Lines
2s 2pi/2
769 650
Auger Lines
L23M23M23
944
711
Line
2P3/2
639
Positions
3s
83
L3M23M45
900
667
(eV)
3p
48
L3M45M45
852
619
(Al)
(Mg)
78
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Manganese Mn
Atomic Number 25
2P3/2
LMM
670
Binding Energy (eV)
Ar
655
3s
\ /
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound Type 638 639 640 641 642 643 644 645
Mn
MnS
MnCh
MnF3
MnO
Mn3O4
MnO2
MnOOH
MnSO4
Mn(C5H5)2
\
■
i
Mn in MnC>2
Monochromated Al Koc
2p3/2 = 642.1 eV
A= 11.7 eV
2P1/2 A
^—^_—-
2pW\
/
660
645
Binding Energy (eV)
630
<D PHYSICAL ELECTRONICS
79

Iron Fe
Atomic Number 26
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
2p3/2
2pl/2
LMM
Binding Energy (eV)
3p
3s
Ar
1400
1200 1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 707.0 eV
A= 13.10 eV
2p
1/2
2p3/2
740
720
Binding Eneigy (eV)
700
Photoelectroi
2s
845
Auger Lines
i Lines
2pi/2
720
LM23M23
888
655
Line Positions
2p3/2
707
3s
92
L3M23M45 (*I
839
606
(eV)
3p
53
>)
L3M45M45
784
551
(Al)
(Mg)
80
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Iron Fe
Atomic Number 26
1200
1000
800
600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound type 706 707 708 709 710 711 712 713
Fe
FeS
FeS2 (markasite, pyr)
FeCl2
FeCl3
FeO
FeOOH
FeSO4
K3Fe(CN)6
K4Fe(CN)6
J
*
Fe in
Monochromated Al Ka
2pi/2
2p3/2 = 710.9 eV
A= 13.6 eV
740
720
Binding Energy (eV)
700
<D PHYSICAL ELECTRONICS
81

Cobalt Co
Atomic Number 27
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 778.3
A = 14.97 eV
eV
-
2P1/2-A
2p3/2 11
J
VLMM
815
Binding Energy (eV)
770
Photoelectron Lines
2s 2pi/2
925 793
Auger Lines
L3M23M23
838
605
L3M23M45 (3
771
538
Line
2p3/2
778
Positions
3s
101
L2M23M23
831
598
(eV)
3p
60
L3M23M45 (
111
544
P) L2M23M45(1P) L3M45M45
713 698
480 465
P)
(Al)
(Mg)
(Al)
(Mg)
82
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Cobalt Co
Atomic Number 27
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound Type 778 779 780 781 782 783 784
Co
C0F2
C0F3
CoO
C03O4
CO2O3
CoOOH
Co(OH)2
CoSO4
C0(NH3)3Cl3
i
»
Co in CoO
Monochromated Al Kce
2p3/2 = 780.4 eV
A= 15.2 eV
2P3/2 A
/
J
815
770
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
83

Nickel Ni
Atomic Number 28
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 852.7 eV
A = 17.27 eV
890
865
Binding Energy (eV)
840
Photoelectron Lines
2s 2pi/2
1009 870
Auger Lines
L3M23M23
778
545
L3M23M45 (3
706
473
Line
2p3/2
853
Positions
3s
111
L2M23M23
772
539
(eV)
3p
67
L3M23M45 (
712
479
P) L2M23M45(1P) L3M45M45
641 624
408 391
P)
(Al)
(Mg)
84
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Nickel Ni
Atomic Number 28
1200
1000
800 600
Binding Energy (eV)
400
2p3/2 Binding Energy (
[eV)
Compound Type 852 853 854 855 856 857 858
Ni
Silicides
NiS
Halides
NiO
Ni2O3
Ni(NO3)2
Ni(acac)2
Ni(OAc)2 • 4H2O
Ni(dimethylglyoxim)2
■
■B
-
\m
■r
Ni in NiO
2p3/2 = 853.8 eV
A= 17.49 eV
2P3/2 A
r
890
865
Binding Energy (eV)
840
<D PHYSICAL ELECTRONICS
85

Copper Cu
Atomic Number 29
Handbook of X-ray Photoelectron Spectroscopy
2p3/2
Monochromated Al Ka
2pi/2
580
570
Binding Energy (eV)
LMM
3s
3d
1400
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 = 932.7 eV
A = 19.80 eV
970
Binding Energy (eV)
925
Photoelectron Lines
2s
1097
Auger Lines
L3M23M45
640
407
2pi/2
953
Line
2p3/2
933
L3M23M23
719
486
(3P) L2M23M45
628
395
Positions
3s
123
L2M23M23
712
479
(eV)
3pi/2
77
3p3/2
75
L3M23M45
648
415
(!P) L3M45M45
568
335
(*P)
(Al)
(Mg)
L2M45M45
548
315
(Al)
(Mg)
86
(D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Copper Cu
Atomic Number 29
2p3/2
345
335
Binding Energy (eV)
325
LMM
3p
3s
3d
1200
1000
800 600
Binding Energy (eV)
400
200
2p3/2 Binding Energy (eV)
Compound Type 931 932 933 934 935 936
Cu
Cu2S
CuS
CuCl
CuCh
Cu2O
CuO
Cu(OH)2
CuSO4
Cu(OAc)2
Cu(salicylaldoxime)
Cu in CuO
Monochromated Al Ka
2p3/2 = 933.6 eV
A = 19.9 eV
970
2p3/2i
Binding Energy (eV)
925
(D PHYSICAL ELECTRONICS
87

Handbook of X-ray Photoelectron Spectroscopy
Zinc Zn
Atomic Number 30
Monochromated Al Ka
2p3/2
480
Binding Energy (eV)
1400
1200
LMM
3p
3d
1000
800 600
Binding Energy (eV)
400
200
2p3/2= 1021.8 eV
A = 22.97 eV
2p
1/2
1060
Binding Energy (eV)
1010
Photoelectron Lines
2s
1195
Auger Lines
L3M23M45
573
340
2pl/2
1045
Line
2P3/2
1022
L3M23M23
660
427
(3P) L2M23M45
559
326
Positions
3s
140
L2M23M23
652
419
( !P) L3
(eV)
3pi/2
91
3p3/2
89
L3M23M45
582
349
M45M4
495
262
5
3d
10
(JP)
(Al)
(Mg)
L2M45M45
472
239
(Al)
(Mg)
88
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Zinc Zn
Atomic Number 30
1200
1000
800 600 400
Binding Energy (eV)
200
2p3/2 Binding Energy (eV)
Compound Type 1020 1021 1022 1023 1024
Zn
ZnS
Phosphide
Halides
ZnO
Zn(acac)2
ZnSO4
2H2O
ZnCr2O4
ZnRh2O4
2p3/2= 1021.8 eV
A = 22.97 eV
1060
Binding Energy (eV)
1010
Q> PHYSICAL ELECTRONICS
89

Gallium Ga
Atomic Number 31
Handbook of X-ray Photoelectron Spectroscopy
2pi/2
1400
1200
2p3/2
Monochromated Al Ka
430
1000
420
Binding Energy (eV)
410
LMM
800 600
Binding Energy (eV)
400
3d
200
1160
2p3/2= 1116.7 eV
A = 26.84 eV
2pi/2
2p3/2
|
Binding Energy (eV)
1110
Photoelectron Lines
2s
1301
Auger Lines
L3M23M45
504
271
2pi/2
1144
Line
2p3/2
1117
L3M23M23
597
364
(3P) L2M23M45
487
254
Positions
3s
160
L2M23M23
589
356
(eV)
3pl/2
107
3p3/2
104
L3M23M45
514
281
( P) L3M45M45
419
186
3d
19
(Al)
(Mg)
L2M45M45
392
159
(Al)
(Mg)
90
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Gallium Ga
Atomic Number 31
2pi/2
MgKcc
2P3/2
185
Binding Energy (eV)
175
LMM
3p
3d
1200
1000
800 600 400
Binding Energy (eV)
200
Compound TYpe
2p3/2 Binding Energy (eV)
1116 1117
1118
Ga
GaP
Ga2O3
3d Binding Energy (eV)
Compound Type 18 19 20
21
Ga
GaAs
GaP
AlGaAs
Ga2O3
2p3/2= 1116.7 eV
A = 26.84 eV
1160
2p:
•3/2
1110
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
91

Handbook of X-ray Photoelectron Spectroscopy
Germanium Ge
Atomic Number 32
2p3/2
Monochromated Al Ka
1400
1200
1000
350
340
Binding Energy (eV)
LMM
800 600
Binding Energy (eV)
400
3s
200
3d
Binding Energy (eV)
Photoelectron Lines
2pl/2
1248
Auger Lines
L3M23M45
433
200
2p3/2
1217
L3M23M2
534
301
Line
3s
181
(3P) L2M23M45
412
179
Positions
3pi/2
126
L2M23M23
525
292
(eV)
3p3/2
122
3d
29
L3M23M45
444
211
(!P) L3M45M45
342
109
(!P)
(Al)
(Mg)
L2M45M45
310
77
(Al)
(Mg)
92
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Germanium Ge
Atomic Number 32
1200
1000
800 600 400
Binding Energy (eV)
200
3d Binding Energy (eV)
Compound Type 29 30 31 32 33
Ge
GeAs2
GeTe3As2
GeS3As
GeTe2
GeTe
GeSe2
GeSe
Sulfides
■ I
d
■
■
.
-
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
93

Arsenic As
Atomic Number 33
Handbook of X-ray Photoelectron Spectroscopy
2pi/2
2p3/2
Monochromated Al Ka
270
260
Binding Energy (eV)
LMM
VaJ
3p
3s
3d
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 41.6eV
A = 0.69 eV
3d*
3d3/2
50
Binding Energy (eV)
30
Photoelectron Lines
2pi/2 2p3/2
1359 1324
Auger Lines
L3M23M45 (
371
L2M23M45 (
336
Line
3s
205
p\
Positions
3pi/2
146
(eV)
3p3/2
141
L3M23M45
360
L3M45M45
262
43
(3P)
(Al)
L2M45M45
226
3d5/2
42
(Al)
94
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Arsenic As
Atomic Number 33
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 40 41 42 43 44 45 46 47
As
AlAs
AlGaAs
GaAs
InAs
Sulfides
Asl3
AsBr3
AS2O3
AS2O5
1
■
T
r
3d5/2 = 41.6eV
A = 0.69 eV
3d
[5I2
3d3/2
40
Binding Energy (eV)
30
<D PHYSICAL ELECTRONICS
95

Selenium Se
Atomic Number 34
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 55.6 eV
A = 0.86 eV
3d
L5/2
65
Binding Energy (eV)
45
Photoelectron Lines
3s
232
Auger Lines
L3M23M45 (
299
L2M23M45 (
257
Line
3pi/2
169
Positions
3p3/2
163
(eV)
3d3/2
57
L3M23M45
287
L3M45M45
181
3d5/2
56
(3P)
(Al)
L2M45M45
140 (Al)
96
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Selenium Se
Atomic Number 34
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 54 55 56 57 58
59 60
Se
Ga2Se3
GeSe
GeSe2
Selenides
SeCh
H2SeO3
(Ci4H29Se)2
(C4H8CCX)H)2SeO
-
3d5/2 = 55.6 eV
A = 0.86 eV
3d
3d
L5/2
3/2
65
Binding Energy (eV)
45
<D PHYSICAL ELECTRONICS
97

Bromine Br
Atomic Number 35
Handbook of X-ray Photoelectron Spectroscopy
Br in KBr
Monochromated Al Ka
1400 1200
1000
800 600
Binding Energy (eV)
400
200
4d
3d5/2 = 68.8 eV
A= 1.05 eV
3d5
3d3/2
80
Binding Energy (eV)
60
Photoelectron
3s
256
Auger Lines
Lines
3pl/2
189
Line
3p3/2
182
Positions
3d3/2
70
M23M45N23
1386 (Al)
1153 (Mg)
(eV)
3d5/2
69
4s
15
4d
5
98
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Bromine Br
Atomic Number 35
1200
1000
600
Binding Energy (eV)
Compound Type
3d5/2 Binding Energy (eV)
68 69
70
CsBr
RbBr
KBr
NaBr
LiBr
CuBr2
PbBr2
Ni(NH3)6Br2
Pt(NH3)4Br2
K2PtBr4
K2PtBr6
3d5/2= 68.8 eV
A= 1.05 eV
3d
5/2
3d
3/2
80
Binding Energy (eV)
60
<D PHYSICAL ELECTRONICS
99

Krypton Kr
Atomic Number 36
Handbook of X-ray Photoelectron Spectroscopy
Kr implanted in graphite
Monochromated Al Kot
3p
3d
1400 1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 87.0 eV
A= 1.23 eV
3d3/2
105
Binding Eneigy (eV)
75
Photoelectron
3s*
287
♦Estimate
Lines
3pi/2
216
Line
3P3/2
208
Positions
3d3/2
88
(eV)
3d5/2
87
4s
21
4p
8
100
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Krypton Kr
Atomic Number 36
1200
1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 84 86
Kr in graphite
3d5/2 = 87.0 eV
A= 1.23 eV
3d3/2
3d5/2
^w y —"N
' ■—..—^- ^ V^
105
90
Binding Energy (eV)
75
0 PHYSICAL ELECTRONICS
101

Rubidium Rb
Atomic Number 37
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200 1000
800 600
Binding Energy (eV)
400
200
3d5/2= 111.5 eV
A = 1.49 eV
3d
5/2 i
115
Binding Energy (eV)
105
Photoelectron
3s
325
Auger Lines
Lines
3pi/2
249
Line Positions
3p3/2 3d3/2
240 113
M23M45N23
1385
1152
(eV)
111
4s
31
4p
16
102
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Rubidium Rb
Atomic Number 37
Rb in RbCl
Monochromated Al Ka
MMN
Cl
o
3p3/2
3pi/
\
Cl
3s
3d
Cl
4p
4s
1400
1200
1000
800 600
Binding Energy (eV)
400
200
Compound Type
Rb
RbN3
Rbl
RbBr
RbCl
RbF
Rb3PO4
Rb4P2O7
RbClO4
3d5/2 Binding Energy
109 110
111
Rb in RbCl
3d5/2 = 109.9 eV
A= 1.48 eV
3d5/2A
125
115
Binding Energy (eV)
105
(D PHYSICAL ELECTRONICS
103

Strontium Sr
Atomic Number 38
Handbook of X-ray Photoelectron Spectrosco
Monochromated Al Ka
1400 1200 1000
800 600
Binding Energy (eV)
400 200
3d5/2 = 134.3 eV
A= 1.79 eV
3d5
150
140
Binding Energy (eV)
130
Photoelectron Lines
3s 3pi/2
360 281
Line
3p3/2
270
Positions
3d3/2
136
(eV)
3d5/2
134
4s
39
4p
21
104
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Strontium Sr
Atomic Number 38
1200
1000
800 600
Binding Energy (eV)
400
200
0
3d5/2 Binding Energy (eV)
Compound Type 133 134 135
Sr
SrO
SrF2
SrCO3
SrSO4
Sr(NO3)2
SrMoO4
SrRh2O4
■H
136
3d5/2= 134.3 eV
A= 1.79 eV
150
3d5
3d,
140
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
105

Yttrium Y
Atomic Number 39
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400 1200 1000
800 600
Binding Energy (eV)
400 200
3d5/2 = 156.0 eV
A = 2.05 eV
3d
170
160
Binding Energy (eV)
150
Photoelectron
3s
394
Auger Lines
Lines
3pi/2
311
Line Positions
3p3/2
299
M45N23V
1356
1123
158
(Al)
(Mg)
(eV)
3d5/2
156
4s
45
4p
24
106
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Yttrium Y
Atomic Number 39
MgKa
MNV
3p3/2
3pi/2
4p
4s
1200
1000
800 600
Binding Energy (eV)
400
200
Compound Type
Y
Y2O3
3d5/2 Binding
155
Energy (eV)
156 157
-
3d5/2= 156.0 eV
A = 2.05 eV
3d
5/2
3d,
170
160
Binding Energy (eV)
150
<D PHYSICAL ELECTRONICS
107

Zirconium Zr
Atomic Number 40
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1350
MNN
1335
Binding Energy (eV)
1320
3pi/2
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 178.9 eV
A = 2.43 eV
3d,
180
Binding Energy (eV)
170
Photoelectron Lines
3s 3pi/2
430 343
Auger Lines
M45N23N23
1393
1160
Line
3p3/2
330
Positions
181
M45N23V
1368
1135
(eV)
3d5/2 4s
179 51
M45N45N45
1337
1104
4p
28
(Al)
(Mg)
108
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Zirconium Zr
Atomic Number 40
1200
1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 178 179 180 181 182 183 184 185
Zr
ZrO2
ZrF5
K3ZrF7
KZrF5 • H2O
3d5/2 = 178.9 eV
A = 2.43 eV
3d
5/2,
180
Binding Energy (eV)
170
<D PHYSICAL ELECTRONICS
109

Niobium Nb
Atomic Number 41
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 202.4 eV
A = 2.72 eV
3d
5/2
215
205
Binding Energy (eV)
195
Photoelectron Lines
3s 3pi/2
467 376
Auger Lines
M45N23V
1319
1086
Line
3p3/2
361
Positions
3d3/2
205
M45VV
1287
1054
(eV)
3d5/2
202
(Al)
(Mg)
4s
56
4p
31
110
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Niobium Nb
Atomic Number 41
1200
1000
600
Binding Energy (eV)
3d5/2 Binding Energy (eV)
Cnmpnnnd Type ?.O1 202 203 204 205 206 207 208
Nb
NbN
NbO
Nb2O5
LiNbO3
CaNb2O6
Ca2Nb2O7
Br6(Nb6Cli2)(Bu4N)2
Cl2(Nb6Cli2)(Pr3P)4
Cl2(Nb6Cli2)(Me2SO)4
L
1
j
■
1
I
m
m
_
.[_■
■r
3d5/2 = 202.4 eV
A = 2.72 eV
3d
'5/2
3d3/2
215
205
Binding Energy (eV)
195
<D PHYSICAL ELECTRONICS
ill

Molybdenum Mo
Atomic Number 42
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
MNV
1310
\A MNV
1295
Binding Energy (eV)
__— —
■
__ "
3*.
1280 Jp
3pi/2
3s
_
3/2
-
3d5/2
■
4p
4s |
-A s
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 228.0 eV
A = 3.13eV
3d,
3d3/2
240
230
Binding Energy (eV)
220
Photoelectron Lines
3s 3pi/2
506 412
Auger Lines
M45N23V
1299
1066
Line
3p3/2
394
Positions
3d3/2
231
M45VV
1264
1031
(eV)
3d5/2
228
(Al)
(Mg)
4s
63
4p
36
112
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Molybdenum Mo
Atomic Number 42
1200
1000
800 600
Binding Energy (eV)
:
3d5/2 Binding Energy (eV)
Compound Type 226 227 228 229 230 231 232 233
Mo
Boride
Mo2C
M0S2
M0CI3
M0CI4
M0CI5
MoO2
MOO3
(NH)4MoO4
(CO)xMo(Ph3P)y
1
J
■
T
■
3d5/2 = 228.0 eV
A = 3.13eV
3d
5/2
240
230
Binding Energy (eV)
220
d> PHYSICAL ELECTRONICS
113

Ruthenium Ru
Atomic Number 44
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
MNN
1230
1215
Binding Energy (eV)
1200
3p3/2
3pl/2
3s
3d5/2
4p
1400 1200
1000
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 280.1 eV 3d5/2/
A = 4.17eV
3d
3/2
290
280
Binding Energy (eV)
270
Photoelectron Lines
3s 3pi/2
586 484
Auger Lines
M45N23V
1256
1023
Line
3p3/2
462
Positions
3d3/2
284
M45VV
1212
979
(eV)
3d5/2
280
(Al)
(Mg)
4s
75
4p
43
114
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Ruthenium Ru
Atomic Number 44
MgKa
MNV 995
MVV
980
Binding Energy (eV)
4p
4s
1200
1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 276 277 278 279 280 281 282 283
Ru
RuCb
RuO2
RuO3
RuO4
Ru(NH3)5N2l2
Ru(NH3)5N2Br2
Ru(NH3)5N2Cl2
3d5/2 = 280.1 eV
A = 4.17eV
290
280
Binding Energy (eV)
270
<D PHYSICAL ELECTRONICS
115

Rhodium Rh
Atomic Number 45
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1205
Binding Energy (eV)
1170
3p3/2
3pi/2
1/
3d5/2
4S
4p
Ar
1400
1200 1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 307.2 eV
A = 4.74 eV
3d3/2
3d5/2
320
310
Binding Energy (eV)
300
Photoelectron Lines
3s 3pi/2
629 521
Auger Lines
M45N23V
1234
1001
Line
3P3/2
497
Positions
3d3/2
312
M45VV
1185
952
(eV)
3d5/2
307
(Al)
(Mg)
4s
81
4p
48
116
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Rhodium Rh
Atomic Number 45
MgKa
3d5/2
4s
4p
1200
1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 307 308 309 310 311
Rh
Halides
Rh2O3
ClRh(Ph3P)3
Cl3Rh(Ph3P)3
Cl6Rh(Ph3P)3
Br6Rh(Ph3P)3
Cl2Rh2(cyclooctadiene)2
Rh2(OAc)4 • 2H2O
Rh(NH2CH2COO)3 - H2O
1
■mv
SI
p
3d
A =
___ ■—
5/2 = 307
= 4.74 eV
.2eV
3d3/2 A
3d5/2 A
320
310
Binding Energy (eV)
300
<D PHYSICAL ELECTRONICS
ill

Palladium Pd
Atomic Number 46
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1170
1200 1000
1155
Binding Energy (eV)
1140
800 600
Binding Energy (eV)
400
4d
200
0
3d5/2 = 335.1 eV
A = 5.26 eV
3d3/2
3d5/2 j
350
340
Binding Energy (eV)
330
Photoelectron Lines
3s 3pi/2
671 560
Auger Lines
M45N23V
1211
978
Line
3p3/2
533
Positions
3d3/2
340
M45VV
1159
926
(eV)
3d5/2
335
(Al)
(Mg)
4s
88
4p
52
118
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Palladium Pd
Atomic Number 46
1200
1000
800 600 400
Binding Energy (eV)
3d5/2 Binding Energy (eV)
Compound Type 335 336 337 338 339 340 341
Pd
Pd2Si
Pd3Si
Halides
PdO
PdO2
K2PdCU
K2PdBr4
K2PdCl6
Pd(OAc)2
■
HHHi
*
-
3d5/2 = 335.1 eV
A = 5.26 eV
3d
15/2
3d3/2
350
340
Binding Energy (eV)
330
(D PHYSICAL ELECTRONICS
119

Silver Ag
Atomic Number 47
Handbook of X-ray Photoelectron Spectroscope
Monochromated Al Ka
1145
1120
Binding Energy (eV)
3d5/2
4d
in
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 368.3 eV
A = 6.00 eV
3d3/2
3d5/2
382
372
Binding Eneigy (eV)
362
Photoelectron Lines
3s 3pi/2
719 604
Auger Lines
M45N23V
1191
958
Line
3p3/2
573
Positions
3d3/2
374
M5VV
1135
902
(eV)
3d5/2
368
4s
98
M4VV
1129
896
4p
60
(Al)
(Mg)
120
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Silver Ag
Atomic Number 47
1200 1000
800
600
Binding Energy (eV)
400 200
3d5/2 Binding Energy (eV)
Compound Type 367 368 369
Ag
Alloys
Ag2S
Agl
AgF
Oxides
Ag2CO3
Sulfate
AgOOCCF3
Ag(OAc)
■
da
3d5/2 = 368.3 eV
A = 6.00 eV
3d3l
3d
5/2
382
372
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
121

Cadmium Cd
Atomic Number 48
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1120
1105
Binding Energy (eV)
1090
MNN
3d5/2
4d
4s 4p
1400
1200 1000
800 600
Binding Energy (eV)
400
200
3d5/2
A = 6
= 405.1 eV
.74 eV
3d3/2 ft
3d5/2 A
i
420
Binding Energy (eV)
395
Photoelectron Lines
3s 3pi/2
772 652
Auger Lines
M5N45N45
1110
877
Line
3P3/2
618
Positions
3d3/2
412
M4N45N45
1103
870
(eV)
3d5/2
405
(Al)
(Mg)
4s
110
4p
69
4d
11
122
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Cadmium Cd
Atomic Number 48
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 404 405 406
407
Cd
Hg0.sCd0.2Te
CdTe
CdSe
CdS
Halides
CdO
CdO2
Cd(OH)2
CdCO3
3d5/2 = 405.1 eV
A = 6.74 eV
3d3/2
420
3d
15/2
Binding Energy (eV)
395
Q> PHYSICAL ELECTRONICS
123

Indium In
Atomic Number 49
1400
1200
1000
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
MNN j\
1090
w MNN I
1075
Binding Energy (eV)
3s
^-
■■
■ ■
36312
1060
3P3/2
3pl/2
J A
SVV
J
3d5/2
■
4s 4p
4d
800 600
Binding Energy (eV)
400
200
3d5/2 = 443
A = 7.54 eV
.9eV
3d3/2 A
3d5/2 A
460
Binding Energy (eV)
435
Photoelectron Lines
3s 3pi/2
828 703
Auger Lines
M5N45N45
1084
851
Line
3p3/2
665
Positions
3d3/2
452
M4N45N45
1076
843
(eV)
3d5/2
444
(Al)
(Mg)
4s
123
4p
78
4d
17
124
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Indium In
Atomic Number 49
1200
1000
800
600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 443 444 445 446 447
In
InSb
InP
In2Te3
InCl3
InCl
In2O3
In(OH)3
In(acac)3
BrJnEuN
Br4nPr4N
■i
-I
■
T
3d5/2 = 443.9 eV
A = 7.54 eV
3d3/2
460
3d5/2
435
Binding Energy (eV)
O PHYSICAL ELECTRONICS
125

Tin Sn
Atomic Number 50
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1070
1055
Binding Energy (eV)
1040
MNN
3p3/2
4d
4s 4p
1400
1200 1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 485.0 eV
A = 8.41 eV
3d3/2
3d
5/2
500
Binding Energy (eV)
475
Photoelectron Lines
3s 3pi/2
885 757
Auger Lines
M5N45N45
1058
825
Line
3p3/2
715
Positions
3d3/2
493
M4N45N45
1049
816
(eV)
3d5/2
485
(Al)
(Mg)
4s
137
4p
89
4d
25
126
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Tin Sn
Atomic Number 50
1200
1000
800 600
Binding Energy (eV)
Compound Type
3d5/2 Binding Energy (eV)
484 485 486 487 488
Sn
SnS
Halides
SnO2
Na2Sn03
Ph4Sn
Ph3Sn (Halide)
Me3SnF
Me2SnF2
Br6Sn(Et4N)2
3d5/2 = 485.0 eV
A = 8.41 eV
3d3/2
3d
5/2
500
Binding Energy (eV)
475
<D PHYSICAL ELECTRONICS
ill

Antimony Sb
Atomic Number 51
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
3d3/2
1040
1025
Binding Energy (eV)
1010
3p3/2
MNN
3d5/2
4d
4s 4p
1400
1200 1000
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 528.3 eV
A = 9.34 eV
3d
[3/2
545
3d
■5/2
Binding Energy (eV)
520
Photoelectron Lines
3s 3pi/2
944 813
Auger Lines
M5N45N45
1032
799
Line
3p3/2
767
Positions
3d3/2
537
M4N45N45
1022
789
(eV)
3d5/2
528
(Al)
(Mg)
4s
153
4p
99
4d
33
128
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Antimony Sb
Atomic Number 51
1200
1000
600
Binding Energy (eV)
Compound Type
3d5/2 Binding Energy (eV)
528 529 530 531 532
533
Sb
AlSb
Sulfides
Halides
Sb2O3
Sb2O5
KSbF6
NaSbF6
CsSbF4
Ph3Sb
Bu3Sb
■■:■
+
3d5/2 = 528.3 eV
A = 9.34 eV
3d3/2
3d5
Binding Energy (eV)
520
<D PHYSICAL ELECTRONICS
129

Tellurium Te
Atomic Number 52
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
3d3/2
1015
1000
Binding Energy (eV)
MNN
3P3/2
3d5/2
4s 4p
4d
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 573.1 eV
A = 10.39 eV
3d3/2
590
3d
5/2
Binding Energy (eV)
565
Photoelectror
3s
1009
4s
170
Auger Lines
1 Lines
3pi/2
871
4p
111
M5N45N45
1005
772
Line
3p3/2
820
4d3/2
42
Positions
3d3/2
583
4d5/2
41
M4N45N45
995
762
(eV)
3d5/2
573
5s
12
(Al)
(Mg)
130
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Tellurium Te
Atomic Number 52
1200
1000
800
600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 572 573 574 575 576 577
578
Te
CdTe
GeTe
Hgo.8Cdo.2Te
Tellurides
Halides
TeO2
TeO3
Te(OH)6
Ph2Te2
Br3TePh
3d5/2 = 573.1 eV
A = 10.39 eV
3d3/2
590
3d
15/2
Binding Energy (eV)
565
<D PHYSICAL ELECTRONICS
131

Iodine I
Atomic Number 53
Handbook of X-ray Photoelectron Spectroscopy
IinKI
Monochromated Al Ka
MNN 1
1000 950
Binding Energy (eV)
K
MNN , 3p3/2
K
K
4d
4s 4p
LOj:
,5s
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 619.3 eV
A= 11.50 eV
3d3/2
3d5
640
Binding Energy (eV)
615
Photoelectror
3s
1071
4s
187
Auger Lines
1 Lines
3pi/2
930
4p
123
M5N45N45
982
749
Line
3p3/2
875
4d3/2
51
Positions
3d3/2
630
4d5/2
49
M4N45N45
971
738
(eV)
3d5/2
619
5s
18
(Al)
(Mg)
132
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Iodine I
Atomic Number 53
1200
1000
800
600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 618 619 620 621 622 623 624
I2
Alkali iodides
Agl
Nil2
Nil2. 6H2O
NaIO3
NaIO4
H5IO6
I2O5
IC1
ICI3
H™ 1
m
1
it
1
3d5/2 = 619.3 eV
A= 11.5 eV
640
Binding Energy (eV)
615
<B PHYSICAL ELECTRONICS
133

Xenon Xe
Atomic Number 54
Handbook of X-ray Photoelectron Spectroscopy
Xe implanted in graphite
Monochromated Al Koc
970
945
Binding Energy (eV)
MNN
4d
4s 4P
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 669.7 eV
A = 12.67 eV
3d
3/2
3d5/2
700
675
Binding Energy (eV)
650
Photoelectror
3s
1141
4s
207
Auger Lines
1 Lines
3pl/2
996
4p
139
M5N45N45
955
722
Line
3p3/2
934
4d3/2
63
Positions
3d3/2
683
4ds/2
61
M4N45N45
942
709
(eV)
3d5/2
670
5s
17
(Al)
(Mg)
134
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Xenon Xe
Atomic Number 54
1200
1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound type 668 669 670 671 672 673
Xe in Ag
Xein Au
Xe in Cu
Xe in Fe
Xe in graphite
■
674
—T"
3d5/2 = 669.7 eV
A = 12.67 eV
3d
■3/2
700
3d
5/2
675
Binding Energy (eV)
650
Q> PHYSICAL ELECTRONICS
135

Cesium Cs
Atomic Number 55
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 726.4 eV
A = 13.94 eV
3d
3/2
3d5/2
740
Binding Energy (eV)
715
Photoelectron Lines
3s
1219
4s
234
Auger Lines
3pi/2
1069
4pi/2
173
M5N45N45
931
698
Line
3P3/2
1002
4p3/2
161
Positions
3d3/2
740
4d3/2
80
M4N45N45
918
685
(eV)
3d5/2
726
4d5/2 5s
77 25
(Al)
(Mg)
136
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Cesium Cs
Atomic Number 55
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
3d5/2 Binding Energy (eV)
723 724 725
726
Cs
Halides
CsN3
Cs2SO4
CS3PO4
CS4P2O7
CsClO4
Cs2CrO4
Cs2Cr207
CsOH
-
3d5/2 = 726.4
A = 13.94 eV
eV
3d3/2 /|
Plasmon A 1
/ \
3d5/2 fl
Plasmon
A
/
V_—/>
765
740
Binding Energy (eV)
715
0) PHYSICAL ELECTRONICS
137

Barium Ba
Atomic Number 56
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200 1000
800 600
Binding Energy (eV)
400
200
3d5/2 = 780.6 eV
A = 15.33 eV
3d
3/2
820
795
Binding Energy (eV)
770
Photoelectron Lines
3s
1292
4s
254
Auger Lines
3pl/2
1138
4pl/2
193
M5N45N45
900
667
Line
3p3/2
1064
4P3/2
179
Positions
3d3/2
796
4d3/2
93
M4N45N45
886
653
(eV)
3d5/2
781
4d5/2 5s
90 31
(Al)
(Mg)
5p
15
138
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Barium Ba
Atomic Number 56
1200 1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 778 779 780 781
Ba
BaS
BaO
Ba(NO3)2
BaCO3
BaSO4
BaCrO4
BaMoO4
BaRh2O4
3d5/2 = 780.6 eV
A = 15.33 eV
3d
'5/2
3d3/2
820
795
Binding Energy (eV)
770
<D PHYSICAL ELECTRONICS
139

Lanthanum La
Atomic Number 57
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200
1000
800 600
Binding Energy (eV)
400
3d5/2 = 835.8 eV
A = 16.78 eV
3d3/2
3d
5/2
845
Binding Energy (eV)
820
Photoelectron Lines
3pi/2
1208
4s
275
Auger Lines
3p3/2
1128
4pl/2
213
M5N45N45
867
634
Line
3d3/2
853
4p3/2
197
Positions
3d5/2
836
4d3/2
106
M4N45N45
854
621
(eV)
4d5/2 5s
103 34
(Al)
(Mg)
5p
17
140
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Lanthanum La
Atomic Number 57
1200
1000
600
Binding Energy (eV)
400
200
3d5/2 Binding Energy (eV)
Compound Type 833 834 835 836 837 838
839
La
LaH2
La2O3
3d5/2 = 835.8 eV
A = 16.78 eV
3d3/2
870
3d
[5/2
845
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
141

Cerium Ce
Atomic Number 58
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
3d5/2
MNN
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 883.8 eV
A= 18.10 eV
3d
3d
15/2
940
900
Binding Energy (eV)
860
Photoelectron
3pl/2
1272
4s
290
Auger Lines
Lines
3p3/2
1184
4pl/2
223
M45N45N45
833
600
Line
3d3/2
902
4P3/2
207
(Al)
(Mg)
Positions
3d5/2
884
4d3/2
112
(eV)
4d5/2 5s
109 36
5p
18
142
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Cerium Ce
Atomic Number 58
MNN
4d
1200 1000
800 600 400
Binding Energy (eV)
200
Compound Type
Ce
CeAl2
CePd3
CeSe
CeCu2Si2
CeO2
CeH3
Binding Energy (eV)
881 882 883 884 885 886
■■
..
3d5/2 = 883.8 eV
A= 18.10 eV
3d,
900
Binding Energy (eV)
860
<D PHYSICAL ELECTRONICS
143

Praseodymium Pr
Atomic Number 59
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
MNN
800 600
Binding Energy (eV)
400
200
0
3d5/2 = 931.8 eV
A = 20.4 eV
3d3/2 i\
3d5/2 /
\
I
990
950
Binding Energy (eV)
910
Photoelectron Lines
3pi/2 3p3/2
1339 1242
4s 4pi/2
305 234
Auger Lines
M45N45N45
797
564
Line
3d3/2
952
4p3/2
218
(Al)
(Mg)
Positions
3d5/2
932
4d
115
(eV)
5s
38
5p
18
144
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Praseodymium Pr
Atomic Number 59
1200
1000
800
600
Binding Energy (eV)
400
200
Compound Type
3d5/2 Binding Energy (eV)
931 932 933 934 935
Pr
Pr2O3
PrO2
Compound Type
4d Binding Energy (eV)
115 H6
117
Pr2O3
PrO2
3ds/2 = 931.8 eV
A = 20.4 eV
3d
L5/2
3d
990
950
Binding Energy (eV)
910
<D PHYSICAL ELECTRONICS
145

Neodymium Nd
Atomic Number 60
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200
1000
800 600
Binding Energy (eV)
3d5/2 = 980.8 eV
A = 22.6 eV
3d
3d
15/2
1040
1000
Binding Energy (eV)
960
Photoelectron
3p3/2
1301
4s
320
Auger Lines
Lines
3d3/2
1003
4pi/2
245
M45N45N45
758
525
Line
3d5/2
981
4p3/2
228
(Al)
(Mg)
Positions
4d
121
(eV)
5s
39
5p
19
146
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Neodymium Nd
Atomic Number 60
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
Nd
Nd2O3
Compound Type
Nd2O3
3d5/2 Binding Energy (eV)
980 981
4d Binding Energy (eV)
119 120
982
■
■
121
H
3d5/2 = 980.8 eV
A = 22.6 eV
3d5/2
1040
1000
Binding Energy (eV)
960
<B PHYSICAL ELECTRONICS
147

Samarium Sm
Atomic Number 62
Handbook of X-ray Photoelectron Spectroscopy
1400
1200
3d5/2 Monochromated Al Ka
1000
MNN
800 600
Binding Energy (eV)
4d
400
200
3d5/2= 1081.1 eV
A = 26.8 eV 3d5/2
3d3/2 A
/I
1140
1100
Binding Energy (eV)
1060
Photoelectron Lines
3d3/2 3d5/2
1108 1081
Auger Lines
M45N45N45
682
449
Line
4s
349
(Al)
(Mg)
Positions
4pl/2
283
(eV)
4p3/2
250
4d
129
5s 5p
41 19
148
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Samarium Sm
Atomic Number 62
1200
1000
800 600
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 1081 1082 1083
1084
Sm
Sm2O3
3d5/2= 1081.1 eV
A = 26.8 eV
3d
'5/2
1140
1100
Binding Energy (eV)
1060
<D PHYSICAL ELECTRONICS
149

Europium Eu
Atomic Number 63
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
MNN
4d
1400 1200 1000
800 600
Binding Energy (eV)
400 200
3d5/2= 1125.6 eV /\ 3d,
A = 29.8 eV
1190
1150
Binding Energy (eV)
1110
Photoelectron Lines
1155 1126
Auger Lines
M45N45N45
637
404
Line
4s
363
(Al)
(Mg)
Positions
4pl/2
289
(eV)
4p3/2
255
Ad
128
5s
39
5p
19
150
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Europium Eu
Atomic Number 63
1200
1000
800 600 400
Binding Energy (eV)
200
3d5/2 Binding Energy (eV)
Compound Type 1123 1124 1125 1126 1127 1128 1129
Eu
■
4d Binding Energy (eV)
Compound Tvoe 128 129 1™ m 132 133 134 135
Eu
Eu2O3
■
•
180
150
Binding Energy (eV)
0 PHYSICAL ELECTRONICS
151

Gadolinium Gd
Atomic Number 64
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
MNN
1400
1200 1000
800 600
Binding Energy (eV)
400
200
Binding Energy (eV)
Photoelectron
1218
4s
378
Auger Lines
Lines
1186
4pi/2
291
M45N45N45
602
369
Line
4p3/2
272
(Al)
(Mg)
Positions
4d
140
(eV)
5s
43
5p
21
4f
8
152
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Gadolinium Gd
Atomic Number 64
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
4d Binding Energy (eV)
140 141 142 143 144
Gd
Gd2O3
Compound Type
3d5/2 Binding Energy (eV)
1187 H88
1189
Gd
Gd2O3
4d = 140.4 eV
4d
1
180
130
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
153

Terbium Tb
Atomic Number 65
Handbook of X-ray Photoelectron Spectroscopy
3d5/2 Monochromated Al Ka
MNN
4d
1400
1200
1000
800 600
Binding Energy (eV)
400
200
Binding Energy (eV)
Photoelectron
1276
4s
396
Auger Lines
Lines
3d5/2
1241
4pi/2
322
M45N45N45
559
326
Line Positions (eV)
4p3/2 4d
285 146
M45N45V
411
178
5s
45
M5VV
260
5p
22
4f
8
M4VV
230
(Al)
(Mg)
154
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Terbium Tb
Atomic Number 65
1200 1000
800 600 400
Binding Energy (eV)
200
Compound Type
4d Binding Energy (eV)
145 146 147 148 149
Tb
Tb2O3
TbO2
Compound Type
3d5/2 Binding Energy (eV)
1240 1241
1242
Tb
Tb2O3
M45N45V
4d = 146.0 eV
190
Binding Energy (eV)
4d
140
<D PHYSICAL ELECTRONICS
155

Dysprosium Dy
Atomic Number 66
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400 1200
1000
800 600
Binding Energy (eV)
400
200
0
200
170
Binding Energy (eV)
4d = 152.4 eV
t
4d
140
Photoelectron Lines
3d3/2 3d5/2
1333 1296
4s 4pi/2
417 337
Auger Lines
M45N45N45
526
Line
4p3/2
297
Positions
4d
152
M45N45V
368
(eV)
5s
48
(Al)
5p
23
4f
8
156
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Dysprosium Dy
Atomic Number 66
1200 1000
800 600 400
Binding Energy (eV)
Compound Type
4d Binding Energy (eV)
152 156 160 164 168
Dy
Dy2O3
Compound Type
3d5/2 Binding Energy (eV)
1287 1289 1291 1293 1295
Dy
Dy2O3
200
170
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
157

Holmium Ho
Atomic Number 67
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200
1000
800 600
Binding Energy (eV)
400
200
Binding Energy (eV)
Photoelectron
3d3/2
1393
5s
49
Auger Lines
Lines
3d5/2
1352
5pl/2
30
M45N45N45
488
Line
4s
435
5p3/2
24
Positions
4pi/2
353
4f
9
M45N45V
314
(eV)
4p3/2
309
4d
160
M4VV
117 (Al)
158
CD PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Holmium Ho
Atomic Number 67
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
4d Binding Energy (eV)
158 159
160
Ho
200
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
159

Erbium Er
Atomic Number 68
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
210
Binding Energy (eV)
Photoelectron Lines
4s 4pi/2
451 368
Auger Lines
M45N45N45
440
Line Positions (eV)
4p3/2
321
M45N45V
273
4d 5s
167 52
M5VV
98
5pl/2
31
5p3/2
24
M4VV
56
4f
9
(Al)
160
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Erbium Er
Atomic Number 68
1200
1000
800 600
Binding Energy (eV)
400
200
Compound Type
4d Binding Energy (eV)
167 168
169
Er
Er
Er2O3
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
161

Thulium Tm
Atomic Number 69
Handbook of X-ray Photoelectron Spectroscopy
1400
1200 1000
800 600
Binding Energy (eV)
400
I
\ 4s
\ Monochromated Al Ka
A MNN
V
4P3/2 11
n
4d
4f
t\
i
200
0
220
190
Binding Energy (eV)
160
Photoelectron
4s
470
Auger Lines
M
Lines
4pi/2
384
45N45N^
398
Line
4P3/2
333
15
(Al)
Positions
4d
175
(eV)
5s
53
5pi/2
32
5p3/2
25
4f
8
162
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Thulium Tm
Atomic Number 69
1200 1000
800 600 400
Binding Energy (eV)
V 4s
\ A
4pl/2
A
4P3/2 1
V
4d
5s
4f
5p
1
200
Compound Type
4d Binding Energy (eV)
174 175
176
Tm
220
190
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
163

Ytterbium Yb
Atomic Number 70
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400 1200 1000
800 600
Binding Energy (eV)
400 200
220
Binding Energy (eV)
Photoelectron Lines
4s 4pi/2
482 389
Line
4P3/2
341
Positions
4d
182
(eV)
5s
51
5pl/2
30
5p3/2
24
4f
3
164
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Ytterbium Yb
Atomic Number 70
1200 1000
800 600 400
Binding Energy (eV)
Compound Type
4d Binding Energy (eV)
181 182 183 184 185 186
Yb
Yb2O3
220
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
165

Lutetium Lu
Atomic Number 71
Handbook of X-ray Photoelectron Spectroscop;
Monochromated Al Ka
1400 1200
1000
800 600
Binding Energy (eV)
400
200
Binding Energy (eV)
Photoelectron
4s
509
5s
57
Lines
4pl/2
413
5pi/2
34
Line
4p3/2
360
5P3/2
27
Positions
4d3/2
206
4f5/2
9
(eV)
4d5/2
196
4f7/2
7
166
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Lutetium Lu
Atomic Number 71
1200
1000
800 600 400
Binding Energy (eV)
200
0
4f7/2 Binding Energy (eV)
Compound Type 5 6 7 8
Lu
■F
4f7/2 = 7.3 eV
A= 1.5 eV
7/2
Binding Energy (eV)
Q> PHYSICAL ELECTRONICS
167

Hafnium Hf
Atomic Number 72
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
4f
4d5/2
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
4f7/2 = 14.3 eV
A= 1.71 eV
4f-
7/2
25
4f-
5/2
Binding Energy (eV)
Photoelectron Lines
4s
534
5s
63
Auger Lines
4pi/2
437
5pi/2
38
N5N67N7
1317
1084
Line
4p3/2
380
5p3/2
30
Positions
4d3/2
222
4f5/2
16
N4N67N7
1306
1073
(eV)
4d5/2
211
4f7/2
14
(Al)
(Mg)
168
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Hafnium Hf
Atomic Number 72
Mg
\|
Ka
I 1100
V NNN
■
Ni
V
V
Binding Energy (eV)
i
NNN
1050
4s
4pi/2
4P3/2
1
4d3/2
/
j
4d5/2
—i
4f
5p
J
■
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2 Binding Energy (eV)
Compound Type 14 15 16
Hf
HfO2
1 1
—
—
4d5/2 Binding Energy (eV)
Compound Type ?1? 213 214
Hf
HfO2
-
-
4f7/2 = 14.3 eV 4f7/2
A= 1.71 eV
4f5/2
25
Binding Energy (eV)
0 PHYSICAL ELECTRONICS
169

Tantalum Ta
Atomic Number 73
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
4f
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
4f7/2 = 21.9eV
A= 1.91 eV
•>3/2
35
4f-
7/2
4fi
5/2
Binding Energy (eV)
15
Photoelectron Lines
4s
563
5s
69
Auger Lines
4pi/2
463
5pi/2
43
N5N67N7
1318
1085
Line
4p3/2
401
5p3/2
33
Positions
4d3/2
238
4f5/2
24
N4N67N7
1306
1073
(eV)
4d5/2
226
4f7/2
22
(Al)
(Mg)
170
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Tantalum Ta
Atomic Number 73
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2 Binding Energy (eV)
Compound Type 21 22 ^ 24 25 26 27 2
Ta
TaS
TaS2
Halides
Ta2O5
Br6(Ta6Cli2)(Bu4N)2
Cl6(Ta6Cli2)(EuN)2
■
■
■
■
4f7/2
A= 1
5p3/2
= 21.9
.91 eV
eV
.—-—
4f5/2
i
J
4f7/2 A
i
VI
35
25
Binding Energy (eV)
15
(D PHYSICAL ELECTRONICS
ill

Tungsten W
Atomic Number 74
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
4f
1340
1310
Binding Energy (eV)
1280
4d5/2
1400
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2
A = 2
= 31.4
18 eV
eV
—-
.
5P3/2
^ --~_
4f5/2
1
J
4f7/2 fl
\\
45
35
Binding Energy (eV)
25
Photoelectron Lines
4s
594
5s
75
Auger Lines
4pi/2
491
5pi/2
47
N5N67N7
1320
1087
Line
4p3/2
424
5p3/2
37
Positions
4d3/2
256
4f5/2
33
N4N67N7
1307
1074
(eV)
4d5/2
243
4f7/2
31
(Al)
(Mg)
172
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Tungsten W
Atomic Number 74
1200
1000
800 600 400
Binding Energy (eV)
200
4f7/2 I
Compound Type 31 31
W
we
ws2
Halides
wocu
Oxides
Tungstate
Rh2WO6
CUW(Et3P)2
Cl3SnW(CO)3(C5H5)
Ph3PW(CO)5
■
■
binding Energy (eV)
> ^ -U 35 36 37 38
1
1
■
.
■
— —
-
■
— -
■
u
L
4f7/2 = 31.4eV
A = 2.18eV
4f7/2
4f<
5/2
45
35
Binding Energy (eV)
25
<B PHYSICAL ELECTRONICS
173

Rhenium Re
Atomic Number 75
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
NNN
1340
4f7/2
4f5/2
1310
Binding Energy (eV)
1280
1400
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2 = 40.3
A = 2.43 eV
eV
4f5/2 1
4f7/2 ft
I
50
40
Binding Energy (eV)
30
Photoelectron Lines
4s 4pi/2
625 518
Auger Lines
N5N67N7
1322
1089
Line
4p3/2
446
Positions
4d3/2
274
N4N67N7
1309
1076
(eV)
260
(Al)
(Mg)
5s
99
4f5/2
42
4f7/2
40
174
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Rhenium Re
Atomic Number 75
1200
1000
1 MgKot
\
\A NNN
1
\
1100
\
Binding Energy (eV)
4s
—.—^~~—^V- «
i
NNN
1050
4P3/2
4pi/2 1
i
4d5/2
4d3/2
i
J
\ .
i
4f7/2
4f5/2
5sA/\
I,
800 600
Binding Energy (eV)
400
200
4f7/2]
Compound Type 40 4
Re
ReO2
ReO3
K2ReCl6
Cl3Re0(Ph3P)2
Cl2ReN(Ph3P)2
Cl4Re(Et3P)2
Cl4Re(PMe2Ph)2
Cl3Re(PMe2Ph)3 mer
CI2Re(PMe2Ph)4 trans
■
ClReN2(PMe2Ph)4trans ■■"
Bindin^
g Energy (eV)
1 42 43 44 4.
■
■
1 m
v
■
5 46 47
4f7/2 = 40.3 eV 4f
A = 2.43eV ?
4f
5/2
50
40
Binding Energy (eV)
30
Q> PHYSICAL ELECTRONICS
175

Osmium Os
Atomic Number 76
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
4f7/2
4f5/2
1340
1290
Binding Energy (eV)
4d5/2
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
4f7/2 = 50.7 eV
A = 2.72 eV
4f5/2
4f7/2
60
Binding Energy (eV)
5p
40
Photoelectroi
4s
658
5s*
89
Auger Lines
*Estimate
i Lines
4pi/2
548
4f5/2
54
N5N67N7
1326
1093
Line
4p3/2
471
4f7/2
51
Positions
4d3/2
293
5p
44
N4N67N7
1311
1078
(eV)
4d5/2
279
(Al)
(Mg)
176
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Osmium Os
Atomic Number 76
1200 1000
800 600 400
Binding Energy (eV)
200
4f7/2 Binding Energy (eV)
Compound Type 50 51 52 53
54
Os
OsO2
K2Osl6
K2OsBr6
K2OsCl6
OsCU(Et3P)2
OsCU(PhPMe2)2 trans
OsCl3(PhPMe2)3 mer
OsCl2(PhPMe2)4 trans
4f7/2 = 50.7 eV
A = 2.72 eV
4f5/2
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
177

Iridium Ir
Atomic Number 77
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200
1000
800 600
Binding Energy (eV)
400
4f7/2 = 60.9 eV
A = 2.98 eV
Binding Energy (eV)
55
Photoelectron Lines
4s
692
5s*
96
Auger Lines
*Estimate
4pi/2
578
4f5/2
64
N5N67N7
1329
1096
Line
4P3/2
495
4f?/2
61
Positions
4d3/2
312
5p
48
N4N67N7
1314
1081
(eV)
4d5/2
297
(Al)
(Mg)
178
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Indium Ir
Atomic Number 77
1200
1000
I MgKa
\A NNN
\
\
i
■ _
\
1110
Binding Energy (eV)
4c 4pi/2
1 1
NNN
\^
1060
4P3/2
\——-
4d5/2
4d3/2
J
4f7/2
4f5/2
l5p
V,
800 600 400
Binding Energy (eV)
200
4f7/2 Binding Energy (eV)
Compound Type 60 61 62 63 6^
It
1tC13
K2lrBr6
K3IrBr6
K2I1CI6
K3IrCl6
(NH4)2lrCl6
(NH4)3lrCl6
KI1CI5NO
KIr2(CO)4Cl4
K2lr2(CO)4Cl5
1
J
-1
m
■ I
1 ■
i
I 65
■
4f7/2 = 60.9 eV
A = 2.98 eV
4f-
7/2
4f5/2
75
Binding Energy (eV)
55
0 PHYSICAL ELECTRONICS
179

Platinum Pt
Atomic Number 78
Handbook of X-ray Photoelectron Spectroscopy
1400
Monochromated Al Ka
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/
A =
_—.—■—■
2 = 71.2
3.33 eV
__
eV
4f5/2 A
4f7/2 A
85
75
Binding Energy (eV)
65
Photoelectron Lines
4s
725
5s*
103
Auger Lines
*Estimate
4pl/2
609
4f5/2
74
N5N67N7
1334
1101
Line
4p3/2
520
4f7/2
71
Positions
4d3/2
332
5p
52
N4N67N7
1317
1084
(eV)
4d5/2
315
(Al)
(Mg)
180
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Platinum Pt
Atomic Number 78
1200
1000
800
600
Binding Energy (eV)
400
200
4f7/2 Binding Energy (eV)
Compound Type 71 72 73 74 75 76 77 7
PtSi
Pt2Si
PtCl2
PtCl4
Oxides
Pt(OH)2
(IV) Halides
Cl2Pt(Ph3P)2 cis
l2Pt(Me3P)2 cis
l2Pt(Me3P)2 trans
1
■
■
m
LJ
■
am
Ml
L_
—
—
■
— -
4f7/2 = 71.2eV
A = 3.33 eV
4f<
5/2
Binding Energy (eV)
(D PHYSICAL ELECTRONICS
181

Gold Au
Atomic Number 79
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
4f5/2
4d5/2
NNN
4p3/2
NNV
4s
4f7/2
5p
1400
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2 = 84.0 eV
A = 3.67 eV
100
80
Binding Energy (eV)
Photoelectron
4s
763
5s*
110
Auger Lines
N67O45O4
1416
1183
♦Estimate
Lines
4pi/2
643
4f5/2
88
5
Line Positions
4p3/2
547
4f7/2
84
N5N6N67
1342
1109
4d3/2
353
5pi/2
74
N
(eV)
4d5/2
335
5P3/2
57
4N6N67
1324
1091
N5N67V
1247
1014
(Al)
(Mg)
182
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Gold Au
Atomic Number 79
1200
1000
800
600
Binding Energy (eV)
400
200
4f7/2 Binding Energy (eV)
Compound type 83 84 85 86 87 88
Au
AuSn
AuSru
YbAu2
ClAuPh3P
ClAu(Ph3P)2
Cl3AuPh3P
(Ph3P)AuNO3
ClAu(Ph3As)
(-AuSPEt2S-)2
(-AuCH2PEt2CH2-)2
m
5
Hi
L
■hi
4f7/2 = 84.0 eV
A = 3.67 eV
4f5/2 A
4f7/2 A
100
90
Binding Energy (eV)
80
0 PHYSICAL ELECTRONICS
183

Mercury Hg
Atomic Number 80
Handbook of X-ray Photoelectron Spectroscopy
Hg in HgS
Monochromated Al Ka
NNV
1415
Binding Energy (eV)
4f5/2
1380
4d5/2
4f7/2
5d
1400
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2= 101.0 eV
A = 4.05 eV
115
4f5/2
4f-
7/2
105
Binding Energy (eV)
95
Photoelectror
4s
805
4f5/2
105
Auger Lines
1
*Estimate
i Lines
4pl/2
682
4f7/2
101
V7O45O45
1412
1179
Line
4p3/2
579
5pi/2
85
Positions
4d3/2
381
5p3/2
67
N5N7O
1246
1013
(eV)
4d5/2
361
5d3/2
12
5s*
125
5d5/2
10
N4N6O
1230
997
(Al)
(Mg)
184
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Mercury Hg
Atomic Number 80
1200
1000
800 600 400
Binding Energy (eV)
200
4f7/2 Binding Energy (eV)
Compound TYpe 99 100 101 10
Hg
Hg0.sCd0.2Te
HgS
Hgl2
HgBr2
HgCl2
HgF2
HgO
Et2NC6H4Hg0Ac
Hg(thiodibenzoylme)2
(Ph4P)2Hg(SCN)4
VL
__————
Jm
■
4f7/2= 101.0 eV
A = 4.05 eV
105
Binding Energy (eV)
$ PHYSICAL ELECTRONICS
185

Thallium Tl
Atomic Number 81
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
NNN
NNV
1415
1400
Binding Energy (eV)
1385
4s
4fs/2
4f7/2
5d
5pi/2
5p3/2
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
4f7/2= 117.7 eV
A = 4.42 eV
130
4f«
5/2
4f7,
120
Binding Energy (eV)
110
Photoelectron
4s
847
4f5/2
122
Auger Lines
N-7O45O45
1401
1168
* Estimate
Lines
4pi/2
720
4f7/2
118
Line Positions (eV)
4p3/2
610
5pi/2
95
N6O45O45
1399
1166
4d3/2
406
5p3/2
74
385
15
N5N7O5
1241
1008
5s*
133
13
N4N67O5
1222
989
(Al)
(Mg)
186
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Thallium Tl
Atomic Number 81
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
4f7/2 Binding Energy (eV)
117 118 119
Tl
Til
TIBr
T1C1
T1F
T12S
TI2S3
TI2O3
CbTl(pyridine)2
Cl6Tl2(PhPEt2)5
120
4f7/2= 117.7 eV
A = 4.42 eV
4f5/2
120
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
187

Lead Pb
Atomic Number 82
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
NOO
NNN
NNV
1405
1390
Binding Energy (eV)
1375
4d5/2
4d3/2,
4s
4f5/2
4f7/2
5pi/2
5d
1400
1200
1000
800 600
Binding Energy (eV)
400
200
0
4f7/2 = 136.9 eV
A = 4.86 eV
140
Binding Energy (eV)
Photoelectron Lines
4s
893
4f5/2
142
Auger Lines
*Estimate
4pi/2
762
4f7/2
137
N7O45O45
1394
1161
Line
4p3/2
644
5pi/2
107
Positions
4d3/2
434
5p3/2
84
N6O45O45
1391
1158
(eV)
412
5d3/2
21
(Al)
(Mg)
5s*
150
18
188
CD PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Lead Pb
Atomic Number 82
1200
1000
800
600
Binding Energy (eV)
400
200
4f7/2 Binding Energy (eV)
Compound Type 136 1T7 138 139 140
Pb
PbTe
PbSe
Halides
PbO
Pb3O4
PbO2
Pb(OH)2
Pb(NO3)2
PbSO3
PbSO4
.—
I
■■
■
*
150
140
Binding Energy (eV)
<D PHYSICAL ELECTRONICS
189

Bismuth Bi
Atomic Number 83
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2= 157.0 eV
A = 5.31 eV
4f5/2
170
4f-
7/2
160
Binding Energy (eV)
150
Photoelectron
4s
940
4f5/2
162
Auger Lines
N
*Estimate
Lines
4pl/2
806
4f7/2
157
f7O45O4
1387
1154
Line
4p3/2
679
5pl/2
119
5
Positions
4d3/2
464
5p3/2
93
N6O45O45
1383
1150
(eV)
4d5/2
440
27
(Al)
(Mg)
5s*
161
24
190
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Bismuth Bi
Atomic Number 83
1200
1000
800 600 400
Binding Energy (eV)
200
4f7/2 Binding Energy (eV)
Compound Type 156 157 158 159 160 161
162
Bi
Bi2S3
Bil3
BiF3
Bi2O3
BiOCl
NaBiO3
(BiO)2Cr2O7
Bi2(SO4)3 • H2O
T
1
-
-
4f7/2 = 157.0 eV
A = 5.31 eV
4f5/2
170
4f-
7/2
160
Binding Energy (eV)
150
0 PHYSICAL ELECTRONICS
191

Thorium Th
Atomic Number 90
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
Aim = 333.2 eV
A = 9.34 eV 4f5/2
355
340
Binding Energy (eV)
325
Photoelectron
4s*
1330
5s
294
Auger Lines
N6O23V
1419
1186
♦Estimate
Lines
4pl/2
1170
5pl/2
234
Line Positions (eV)
4p3/2 4d3/2
965 713
5p3/2 5d3/2
177 93
N67O45O45
1404
1171
4d5/2
676
5d5/2
85
N7O4O5
1335
1102
4fs/2
342
6s
42
4f7/2
333
6pi/2
25
N67O45V
1239
1006
6p3/2
17
(Al)
(Mg)
192
PHYSICAL ELECTRONICS

(andbook of X-ray Photoelectron Spectroscopy
Thorium Th
Atomic Number 90
NOV
4f5/2
4f7/2
NOO 1200 1165
Binding Energy (eV)
1200
1000
800 600 400
Binding Energy (eV)
200
Compound Type
4f7/2 Binding Energy (eV)
333 334 335 336 337
Th
ThO2
ThF4
4d5/2 Binding Energy (eV)
675 676
4f7/2 = 333.2 eV
A = 9.34 eV 4f5/2
355
340
Binding Energy (eV)
325
<D PHYSICAL ELECTRONICS
193

Uranium U
Atomic Number 92
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
1400
1200
1000
800 600
Binding Energy (eV)
400
200
4f7/2 = 377.3 eV
A = 10.89 eV
400
4f-
7/2
385
Binding Energy (eV)
370
Photoelectron Lines
4pi/2
1272
5s
322
Auger Lines
N6O23V
1412
1179
4p3/2
1043
5pl/2
260
Line Positions (eV)
4d3/2
779
5p3/2
195
N7O23O5
1396
1163
4d5/2
736
5d3/2
103
4f5/2
388
5d5/2
94
N6O45O45
1386
1153
4f7/2
377
6s
44
6pl/2
26
N67O45V
1204
971
6p3/2
17
(Al)
(Mg)
194
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Uranium U
Atomic Number 92
1200
1000
800
600
Binding Energy (eV)
400
200
4f7/2 Binding Energy (eV)
Compound Type 377 378 379 380 381 382
383
U
Tellurides
Selenides
Sulfides
Halides
Oxides
Oxy Halides
U(SO4)2
U(acac)4
CaUO4
K2UF6
4f7/2 = 377.3 eV
A=10.89eV Af
41'
400
4f-
7/2
385
Binding Energy (eV)
370
$ PHYSICAL ELECTRONICS
195

III. Appendix

Appendix A. Auger Parameters
The following tables plot the binding energy of the most intense photoelectron line versus the
parameter plots are useful for further separation of the chemical states.
662
pnrrev of the most intense Auger transition. The Auger
energy oj me 5
1344
Compound
AgF
PbF2
BaF2
K3FeF6
NaF
CdF2
CuF2
CuF2
CuF2
LaF3
ZnF2
PrF3
SmF3
K2ZrF6
CaF2
NdF3
ThF4
K2TiF6
SrF2
NiF2
LiF
InF3
K2TaF7
YF3
Na2TiF6
NaSnF3
HfF4
K2NbF7
Na3AlF6
MgF2
CsF
Na2GeF6
Na2SiF6
KSbF6
NaBF4
NiOOCCF3
p-(CF2=CF2)
Fluorine
F Is
Binding Energy (eV)
682.7
683.6
683.7
684.0
684.5
684.5
684.5
684.5
684.5
684.5
684.6
684.6
684.6
684.6
684.8
684.8
684.9
684.9
685.0
685.0
685.1
685.2
685.2
685.3
685.3
685.3
685.4
685.4
685.5
685.8
685.9
685.9
686.0
686.6
687.0
688.4
689.0
FKLL
Kinetic Energy (eV)
659.3
658.5
656.2
656.0
655.0
656.0
657.0
656.2
656.2
658.0
655.6
657.2
657.0
655.1
655.4
657.0
657.0
655.7
656.3
655.5
654.7
656.4
655.0
655.8
655.1
655.3
655.3
655.2
654.1
654.4
653.8
654.0
653.0
656.6
652.8
652.9
652.4
660
658
SP 656
654
652
/
/ 1
/
1
1
7
/
/
/
/
1
1
CF
7
/
1
\
A
1/
{1
y
, 1—
/
s
V
/■l
7
7
7
7
"Meta
7
7
/
Fluoj
7
7
roes
7
1342
1340
+
o
1338
1336
690 689 688 687 686 685 684 683 682 681 680
Binding Energy (eV)
198
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Compound
Na2Se03
Na2C2O4
Na2MoO4
NaAsO2
NaF
Na2CrO4
Na3PO4
NaH2PO2
Na2Sn03« 3H2O
NaOAc
NaF
Na2SO4
NaOOCCH2SH
Na2SO3
Na
Na
NaBr
NaNO3
Na2CrO4
NaCl
Na2CO3
Na2HPO4
Na2S2O3
NaNO2
Na2Cr207
Nal
NaBr
Na2CO3
NaOAc
Na
NaCl
NaCl
Na2O
Mol Sieve Y
NaBF4
Sodium
Na Is
Binding Energy (eV)
1070.8
1070.8
1070.9
1070.9
1071.0
1071.0
1071.1
1071.1
1071.1
1071.1
1071.2
1071.2
1071.2
1071.3
1071.4
1071.4
1071.4
1071.4
1071.4
1071.5
1071.5
1071.5
1071.6
1071.6
1071.6
1071.7
1071.7
1071.7
1071.7
1071.8
1071.8
1072.5
1072.5
1072.6
1072.7
NaKLL
Kinetic Energy (eV)
991.0
990.5
991.0
990.7
998.6
991.2
990.1
989.8
990.3
989.9
998.6
989.8
990.4
990.4
994.3
994.5
990.6
989.6
991.2
990.1
989.8
989.7
990.1
989.8
990.6
991.2
990.6
989.8
989.9
994.3
990.1
990.0
989.8
987.8
987.1
c
S2
1000
998
996
994
992
990
988
Ionic
Compounds| j
Flud
Mei
als
ides
2088
2086
2084
2082 -
2080
1073
1072
Binding Energy (eV)
1071
1070
<D PHYSICAL ELECTRONICS
199

Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
Aluminum
Compound
i
Al
AlAs
AI2O3, gamma
AI2O3, alpha
AI2O3, gamma
A1(OH)3, gibbsite
AI2O3, sapphire
A1OOH, boehmite
A1(OH)3, bayerite
AI2O3, gamma
A1N
A^SiOs, sillimanite
A12p
A1KLL
linding Energy (eV) Kinetic Energy (eV)
72.8
73.6
73.7
73.9
74.0
74.0
74.2
74.2
74.2
74.3
74.4
74.6
1393.3
1391.2
1387.8
1388.2
1387.8
1387.4
1387.8
1387.6
1387.7
1387.8
1389.0
1386.9
1395
1394
1393
1392
1391
>
1 1390
UJ
0
•13
2 1389
1388
1387
1386
1385
1
B
^-
+ -H+
1
Ox
+H-
ides
1
-H-h-h
\r >eni<
^^
le
+H-
Me
Ml 111
-
■
-
■
-
•
1467
1466
1465
1464
1463
1462
1461
75
74 73
Binding Energy (eV)
72
200
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Silicon
Compound
Si2p
Binding Energy (eV)
Si
MoSi2
PdSi
Mol Sieve A
Hydroxysodalite
Si3N4
Mol Sieve X
Natrolite
Mica, muscovite
Wollastonii, CaaSisOg
p-Methylsil. Qinear)
LiAlSi2O6, spodumene
NaAlSi3O8, albite
AlSiOs, sillimanite
p-Phenylsil. (resin)
Mol Sieve Y
Pyrophyltite
p-Methylsil. (resin)
Kaolinite
Talc,Mg3Si4Oio(OH)2
SiO2, alpha Cristobal
H Zeolon
SiO2, gel
SiO2,Vycor
SiO2
S1O2, quartz
99.5
99.6
99.8
101.4
101.7
101.8
102.2
102.2
102.4
102.4
102.4
102.5
102.6
102.6
102.7
102.8
102.9
102.9
103.0
103.1
103.3
103.3
103.4
103.5
103.6
103.7
Si (KLL)
Kinetic Energy (eV)
1616.6
1617.2
1617.4
1610.1
1610.7
1612.6
1609.4
1609.6
1609.6
1610.0
1609.4
1609.6
1609.2
1609.5
1610.0
1608.7
1609.2
1608.8
1609.0
1608.9
1608.8
1608.4
1608.3
1608.5
1608.8
1608.6
1618
1718
1616
1614
B1 1612
£
1610
1608
1606
B Nimdi
J_
Oxides
Metal
1716
1714
1712
32
o
S
I
1710
104
103
102 101 100
Binding Energy (eV)
99
98
© PHYSICAL ELECTRONICS
201

Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
2280
Compound
WS2
NiS
ws2
Na2SO3
Na2SO3
Na2SO3
SO2
SO2
CuSO4
SF6
SF6
Sulfur
S2p
SKLL
Binding Energy (ev) Kinetic Energy (eV)
162.1
162.2
163.0
165.6
166.6
167.2
167.4
168.1
169.3
174.4
177.2
2115.6
2116.1
2115.6
2108.5
2108.5
2108.5
2106.2
2106.2
2108.0
2100.5
2100.5
2118
2116
2114
2112
2110
I 2108
UJ
2106
2104
2102
2100
2098
/
/
/
u
/
/
/
A
11
/
/
/
/
/
Flu
/ 1
/
I
i
/
/
/
/
/
orides
/
/
/
/
/
/
/
/
/
/
/1
/
/
/
/
/I I
ides/
/I
/
I i
i
Si
/
/
/
/
/
Jfide,
i A
/
/
/
/
■■
■•
■
■■
■•
-■
H
n
2278
2276
2274
2272
180 178 176 174 172 170 168 166 164 162 160
Binding Energy (eV)
202
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Compound
C112M03O10
Cu2Se
CuAgSe
CuSe
CuS
CuBr2
Cu2S
CuCl
CuCl
Cu2O
Cu2O
Cu2O
Cu2O
Cu
Cu
CU64Z1136
Cu
Cu
Cu
CuCN
CuC(CN)3
CuO
CU3MO2O9
CuMoO4
CuCr2O4
CuSiO3
CuCO3
Cu(OH)2
CuCl2
Cu(NO3)2
CuSO4
CuF2
CuF2
CuF2
Copper
Cu2p
Binding Energy (eV)
931.6
931.9
931.9
932.0
932.2
932.3
932.5
932.5
932.5
932.5
932.5
932.5
932.5
932.6
932.6
932.6
932.6
932.6
932.7
933.1
933.2
933.7
934.1
934.1
934.6
934.9
935.0
935.1
935.2
935.5
935.5
936.1
936.8
937.0
CuLMM
Kinetic Energy (eV)
916.5
917.6
917.7
918.4
917.9
916.9
917.4
915.0
915.6
916.2
916.2
916.6
917.2
918.6
918.7
918.6
918.6
918.7
918.6
914.5
914.5
918.1
916.6
916.6
918.0
915.2
916.3
916.2
915.3
915.3
915.6
916.0
914.4
914.8
921
920
919
918
917
916
915
914
913
/
A
/
1—(■ -| i i
/Cu
/
V
/I 1 1 1
MM
/
7.
1/
/
/
1 1 1
/ \
1 /
1/
/
/
1 1 1
/
/
/
/
/n
/
1853
/
/ Cu(
*/
/
1/
/ \
1 /
/ \
' 1 -/
I I I I
1852
/
/
1 /
/
1 /
/
(I)
/
-f-H
/
/
/
/
A
i i i i
1851
1850
1849
1848
1847
938 937 936
935 934 933
Binding Energy (eV)
932 931 930
$ PHYSICAL ELECTRONICS
203

Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
Compound
Zn(acac)2
Cll64Zn36
ZnO
Zn
Zn
ZnCl2
Zn4Si2O7(OH)2 •
ZnS
Z11F2
ZnO
ZnF2
Znl2
ZnBr2
Zinc
Zn 2p3/2
Binding Energy (eV)
1021.4
1021.6
1021.75
1021.8
1021.89
1021.9
2H2O 1021.96
1022
1022.2
1022.5
1022.8
1023
1023.4
ZnLMM
Kinetic Energy (eV)
987.7
992.7
988.5
992.1
992.1
989.4
987.3
989.7
986.2
987.7
986.7
988.7
987.3
995
994
993
992
991
990
| 989
988
987
986
985
1025
/
/
/
/
/
n
/
/
/
1
/
/
/
/
/
/
/
/
/
/
1
1
A
1
1
z
Oxi<
i y
1 y
a /
y
_i i
i—i
i
n
A
■
H
n
2014
2013
>
2012 %
2011 !
o
I
2010 j?
2009
2008
1024 1023 1022
Binding Energy (eV)
1021
1020
204
CD PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Compound
NbAs
GaAs
As
Ph3As
As2Se3
Asl3
MeAsl2
Ph3AsS
NaAsO2
Ph3AsO
As2O3
AsBr3
NaH2AsO4
As2O5
KAsF6
Arsenic
As 3d
Binding Energy (eV)
40.8
40.8
41.6
42.8
42.9
43.5
43.5
44.1
44.2
44.3
44.9
45.3
45.5
46.2
48.0
AsLMM
Kinetic Energy (eV)
1226.0
1225.3
1224.8
1221.1
1222.3
1222.9
1222.3
1220.0
1219.5
1219.5
1218.8
1218.1
1217.1
1217.5
1213.8
1228
1226
1224
1222
1220
1218
1216
1214
1212
I Ox des
52
Arsenide
1268
1266 <§
1264 J
1262 o3
1260
50
48 46 44
Binding Energy (eV)
42
$ PHYSICAL ELECTRONICS
205

Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
Selenium
Compound
Se
Se
Ph2Se
Ph2Se2
Ph2SeO
Cl2SePh2
I2SePh2
SeO2
Na2SeO3
H2SeO3
H2SeO4
Se3d
Binding Energy (eV)
55.1
55.5
55.8
55.8
57.6
57.7
58.1
58.9
59.1
59.2
61.2
SeLMM
Kinetic Energy (eV)
1306.7
1307.0
1304.0
1304.3
1301.9
1302.9
1302.1
1301.4
1301.2
1300.8
1297.9
1310
1308
1306
> 1304
1302
1300
1298
1296
/
1
1
s
\/
Oxides
i i
i i
i
i
i
Metal
i
■■
1
1
1364
1362
1360
3
o
6
1358
62 61 60 59 58 57
Binding Energy (eV)
56
55
54
206
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Compound
AgF2
AgO
AgF
CuAgSe
Ag2Se
Ag2O
Ag2SO4
Agl
AgO
Ag2S
Ag
Ag
Mg2lAg79
Ag2SO4
Ag2O
Mg3()Ag50
Al40Ag60
Mg97Ag3
AgOOCCF3
Al95Ag5
Silver
Ag3d
Binding Energy (eV)
367.3
367.4
367.7
367.8
367.8
367.8
367.8
368.0
368.0
368.1
368.2
368.2
368.3
368.3
368.4
368.7
368.8
368.8
368.8
369.0
* 6.0 eV added to the kinetic energy
data on M5N5N5 to obtain kinetic
energy of M4N5N5 line.
Ag M4N5N5
Kinetic Energy (eV)
355.6*
355.5
355.3*
357.3*
357.4*
356.6
354.2
356.1*
356.6*
357.2*
358.2
357.9
358.1*
354.7
356.6*
357.9*
357.7*
358.2*
355.1
357.5*
726
I
3
o
o
I
348
370
369
368
Binding Energy (eV)
367
366
Q> PHYSICAL ELECTRONICS
207

Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
Cadmium
Compound
CdTe
Cd
CdO
CdSe
CdS
Cdl2
CdF2
Cd 3d5/2
Binding Energy (eV)
404.9
405.0
405.2
405.3
405.3
405.4
405.9
CdMNN
Kinetic Energy (eV)
382.4
383.8
382.2
381.4
381.1
381.0
378.8
386
385
384
383
382
381
380
379
378
377
376
375
/
1 1 1 1
/
1 1 1 1
/ 1
/ I1
/
1 1 1 1
Metal/
/
le
1 1 1 1
/
1 1 1 1
■
■
■
1 1 1 1
788
>
787 Z
786
785 n
784
408 407 406 405 404
Binding Energy (eV)
403 402
208
CD PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Compound
In95Sn5
In
InSb
In2O3
In2Te3
InP
InP
In2Se3
In2S3
In(OH)3
(NH4)3InF6
Inl3
InBr3
InCl3
InF3
InBr3
Indium
In 3d5/2
Binding Energy (eV)
443.6
443.8
444.1
444.3
444.5
444.6
444.6
444.8
444.8
445.0
445.6
446.0
446.0
446.0
446.4
446.6
InMNN
Kinetic Energy (eV)
410.5
410.4
401.6
406.4
408.9
408.0
411.0
408.3
407.3
405.0
404.1
405.8
404.8
404.6
403.7
404.8
412
856
410
408
w
Hi
406
404
402
400
B
1
1
Halides
Metal
I
Oxides
■
i
y^\
■ 1 4-4—
854
852
>
0Q
850 2
•"0
8"
848
1
846
448
447 446 445 444
Binding Energy (eV)
443
442
0 PHYSICAL ELECTRONICS
209

Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
Tin
Compound
Sn
Sn
Sn
SnS
Na2SnC>3
SnO2
Na2SnO3
Na2SnO3
NaSnF3
Sn 3d5/2
Binding Energy (eV)
484.9
485.0
485.1
485.6
486.2
486.7
486.7
487.2
487.4
SnMNN
Kinetic Energy (eV)
437.4
437.4
437.4
435.7
431.7
432.7
431.7
431.7
430.8
440
439
A 1Q
43o
A'Xl
f J 1
A'Xf.
(eV)
C
2? 4^5
o
1 434
433
432
431
430
^^
I
I
Oxide
/a
I
/
> ^^
/^
/^
i i
Metal
ii /^
^^
/
1 II 1
■■
■■
■■
■■
923
922
921
920
919
918
I
+
o
I
m
I
488
487 486
Binding Energy (eV)
485
484
210
(D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
Compound
Na2Te
Te
Ph2Te2
I2TeEt2
I2TePh2
I2TeMe2
TeO2
I3TePh
p-tolylTeOOH
Cl2TePh2
Br2TePh2
TeO3
Br3TePh
Br3TeBu
TeBr2
TeCl4
(NH4)2TeCl6
Te(OH)6
Tellurium
Te 3ds/2
Binding Energy (eV)
572.2
573.0
573.9
575.3
575.4
575.6
575.7
575.8
576.1
576.2
576.2
576.6
576.6
576.6
576.7
576.9
576.9
577.1
TeMNN
Kinetic Energy (eV)
485.5
492.2
488.5
487.6
487.8
486.6
487.1
488.2
486.6
486.3
486.6
485.5
486.8
486.5
487.3
486.1
486.4
485.1
493
492
491
490
489
& 488
487
486
485
484
483
ii
ides
Metal
1065
1064
1063 >
1062
1061 §
1060
1059
1058
a
cr3
578
577 576 575 574
Binding Energy (eV)
573
572
® PHYSICAL ELECTRONICS
211

Appendix B. Chemical States Tables
This compilation of all the elements, listed alphabetically, provides specific bindi
breviated notation. When Auger lines are listed, they are in kinetic energy. For enerZles °f var«>us compounds and pure elements, and a reference in ab-
binding energy is listed The references are expanded in Appendix C Anvli^0^^ ^ m°re thm One chemical state> an asterisk denotes the atom whose
■ nny listing with a 0> refers to the work contained in this handbook.
This appendix, most of which was compiled by Dr. Charles Wagner for Phxs' I Fl
software and is also the basis for the XPS database SRD-20 of the National Ltitnt fT'^' *J PWt °f ** chemical state identification algorithm of the PHI
in the journal Surface Science Spectra published by the American Vacuum SocTety Standards and Technology (NIST). Further references may also be found
Ag3d
Ag
Ag
Ag
Ag
Ag
Ag
Ag
Ag
Ag
Ag9sSri5
AUoAg60
Al95Ag5
Mg2iAg79
Mg3oAg5O
Mg97Ag3
Ag2Yb
CuAgSe
Ag2Se
Ag2S
Agl
AgF
AgF2
Ag2O
Ag2O
AgO
AgO
Ag2CO3
Ag2SO4
Ag2SO4
AgOOCCF3
Ag(OAc)
Ag(3-Cl-pyridin)2NO3
AgM4NsN5
Ag
Ag
Ag (M5N5N5)
Ag (M5N5N5)
Ag
AUOAgfio (M5N5N5)
Al95Ag5 (MsNsNs)
Mg2lAg79 (M5N5N5)
Mg3aAg5o (M5N5N5)
Mg9?Ag3 (M5N5N5)
CuAgSe (M5N5N5)
368.3
368.2
368.2
368.1
368.2
368.2
368.2
368.2
368.2
368.0
368.8
369.0
368.3
368.7
368.8
368.8
367.8
367.8
368.1
368.0
367.7
367.3
367.8
368.4
367.4
368.0
367.5
367.8
368.3
368.8
368.4
368.6
357.9
358.2
351.9
351.6
358.3
351.7
351.5
352.1
351.9
352.2
351.3
Asam76
BiSw80
BiSw80
BiSw80
JHBK73
NyMa80
HGW75, Scho73, WRDM79,
GaWi77, SFS77, Wagn75
RRD78, Scho72
HSBS81
WeAn80
WeAn80
WeAn80
WeAn80
WeAn80
WWC78
RRD78
RRD78
RRD78
GaWi77
GaWi77
GaWi77
HGW75, GaWi77, Scho73
RRD78
HGW75, GaWi77, Scho73
WRDM79
HGW75
TMR80
Wagn75
Wagn75
HHDD81
SmWa77
WRDM79
Wagn75
RRD 78, PWA 79
GaWi77
Scho73, FKWF77
WeAn80
WeAn80
WeAn80
WeAn80
WeAn80
RRD78
Ag2Se(M5N5N5)
Ag2S(M5N5N5)
AgI(M5N5N5)
AgF(M5N5N5)
AgF2(M5N5N5)
Ag2O
Ag2O(M5N5N5)
AgO
AgO(M5N5N5)
Ag2SO4
Ag2SO4
AgOOCCF3
A12p
Al
A12O3, sapphire
Al
A1B2
AlAs
AlGaAs
Fe3Al
LiAlK.
A1N
A12S3
AII3
AlBr3
AICI3
A1F3
Al2(MoO4)3
A12(WO4)3
CoAl2O4
MgAl2O4
NiAl2O4
A12O3
A12O3
AI2O3, sapphire
A12O3, alpha
AI2O3, gamma
A12O3, gamma
AI2O3, gamma
A1O2H, boehmite
A1(OH)3, bayerite
A1(OH)3, gibbsite
Al2Si05, kyanite
Al2SiO5, mullite
Al2Si0s, sillimanite
Albite, NaAlSi3O8
351.4 RRD78
351.2 RRD78
350.1 GaWi77
349.3 GaWi77
349.6 GaWi77
356.6 Scho73
350.6 RRD78, GaWi77
355.5 WRDM79
350.6 GaWi77
354.2 Wagn75
354.7 TMR80
355.1 Wagn75
72.9 <D
74.4 <D
72.8 LMKJ75, Tayl82, WPHK82,
WRDM79, WaTa80
71.9 MECC73
73.6 Tayl82
73.6 Tayl82
73.4 ShTr75
75.6 MSC73
74.4 MSC73
74.6 MSC73
74.6 MSC73
75.2 MSC73
74.7 MSC73
76.3 MSC73
74.2 PCLH76
74.3 NgHe76
73.6 PCLH76
74.7 HNUW78
74.2 LFWS79, NgHe76
74.3 Nefe82, MSC73, NSLS77
74.7 KlHe83, NGDS75
74.2 Tayl82, WPHK82
73.9 WPHK82
73.7 WPHK82
74.0 Barr83
74.3 NgHe76
74.2 Tayl82, WPHK82
74.2 Tayl82, WPHK82
74.0 WPHK82
74.7 AnSw74
74.8 AnSw74
74.6 AnSw74, WPHK82
74.3 WPHK82
$ PHYSICAL ELECTRONICS
213

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
Bentonite
Kaolinite
Mica, muscovite
Natrolite
Pyrophyllite
Spodumene
H Zeolon
Hydroxysodalite
Mol Sieve A
Al(acac>3
A1KLL
Al
AlAs
A1N
AI2O3, sapphire
AI2O3, alpha
AI2O3, gamma
A1OOH
A1(OH)3, bayerite
A1(OH)3, gibbsite
AhSiOs, sillimanite
Albite, NaAlSi3O8
Kaolinite
Mica, muscovite
Natrolite
Pyrophyllite
Spodumene
H Zeolon
Hydroxysodalite
Mol Sieve
Ar 2p
Ar in Si
Ar in Ag
Ar in Ag
Ar in Au
Ar in Au
Ar in Cu
Ar in Pt
Ar in graphite
Ar in graphite
As 3d
As
As
NbAs
AlAs
AlGaAs
GaAs
GaAs
InAs
As2Se3
75.0
74.6
74.3
74.3
74.7
74.3
74.8
75.0
73.6
72.9
1393.3
1391.2
1389.0
1387.8
1388.2
1387.8
1387.6
1387.7
1387.4
1386.9
1386.5
1386.7
1387.1
1386.5
1386.8
1387.1
1385.5
1386.4
1386.9
241.9
241.2
241.9
240.3
240.7
241.1
240.4
241.8
241.5
41.6
41.6
40.8
41.0
41.0
40.8
40.9
40.6
42.9
Barr83
Barr83, WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82, Barr83
MSC73
WPHK82, WaTa80
Tayl82
TaRa81
Tayl82, WPHK82
WPHK82
WPHK82
WPHK82, Tayl82
WPHK82, Tayl82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
O
CiHa74
KiWi75
CiHa74
KiWi75
CiHa74
KiWi75
KiWi75
WRDM79
<D
Bert81, BWWI76, MINN78,
SMAV72, UeOd81
BWWI76
Tayl82
Tayl82
LPMK74
GGVL79, WRDM79, Tayl82,
MINN78, IMNN79
LPMK74
BWWI76, UeOd82
A O
AS4i>4
AS2S3
AS2S5
ASI3
AsBr3
A /™\
AS2O3
As2O5
KH2As04
NaH2AsO4
NaAsO2
K3AsO4
Na3AsO4
KAsF6
Ph3As
Ph3AsS
Ph3AsO
Ph3As(OH)2
MeAsh
Ph4AsI
Ph4AsBr
AsLMM
As
NbAs
GaAs
As2Te3
As2Se3
AS2S3
Asl3
AsBr3
As2O3
As2O5
NaH2As04
NaAsO2
K2AsF6
Ph3As
Ph3AsS
Ph3AsO
MeAsI2
Au4f
Au
Au
Au
Au
Au
Au
Au
AuSn
AuSru
YbAu2
ClAuPh3P
43.1
43.4
44.4
43.5
45.3
44.9
46.2
46.7
45.5
44.2
44.4
44.9
45.4
48.0
49.4
42.8
44.1
44.3
44.5
43.5
44.6
44.6
1224.8
1226.0
1225.3
1225.0
1223.3
1222.1
1222.9
1218.1
1218.8
1217.5
1217.1
1219.5
1213.8
1221.1
1220.0
1219.5
1222.3
84.0
84.1
84.0
84.0
83.9
84.1
84.2
84.5
85.1
84.6
85.4
BWWI76
BWWI76
SMAV72
BWWI76
BWWI76
LPGC77, MINN78,
Tayl82, WRDM79
Bert81,BWWI76,
MINN78, SMAV72
SMAV72
WRDM79
Tayl82, WRDM79
SMAV72
SMAV72
SMAV72
SMAV72, WRDM79
SMAV72
HVV79, SMAV72
BWWI76, HVV79
BWWI76, SMAV72, HVV79
SMAV72
BWWI76
HVV79
HVV79, SMAV72
Wagn75, BWWI76
BWWI76
Tayl82, WRDM79
BWWI76
BWWI76
BWWI76
BWWI76
BWWI76
Tayl82, WRDM79, BWWI76
BWWI76
WRDM79
Tayl82, WRDM79
WRDM79
BWWI76
BWWI76
BWWI76
BWWI76
Asam76
BiSw80
BiSw80
BiSw80
PEJ82
ALMP82
FHPW73
FHPW73
WWC78
BMCK77, VVSW77
214
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
ClAu(Ph3P)2
85.4
Cl3AuPh3P
(Ph3P)AuNO3
ClAu(Ph3As)
(-AuSPEt2S-)2
(-AuCH2PEt2CH2-)2
AUM5N7N7
Au
Au(M4N7N7)
Au
Bis
B
B
B4C
AIB2
C02B
CoB
Fe2B
FeB
Hffl2
M11B2
M02B5
MoB2
TiB2
VB2
W2B5
CrB2
BN
Na3BO6
B2O3
B2O3
NaBF4
NF4BF4
NaBR,
H3BO3
Na2B4O7-10H2O
BfoHu
Me4NB3H8
NaBPh4
NH3BF3
C5H5NBF3
EtNH2BF3
NaBH(OMe)3
Ph3PBF3
Ph3POBF3
Ph3POBCl3
Ph3PBCl3
CH3CNBF3
C1C6H4B(OH)2
FC6H4B(OH)2
(EW%PiB,oHi2
(Ph3P)2PlB,aH12
87.3
85.4
85.2
84.8
84.0
2015.8
2101.6
2015.7
189.4
187.3
186.5
188.5
189.1
188.1
188.4
187.9
188.3
187.2
187.7
188.4
187.5
188.3
187.9
188.0
190.5
192.0
192.0
193.3
194.9
195.2
187.2
193.0
192.6
187.8
187.2
187.5
194.9
194.3
194.6
193.6
192.1
193.3
193.8
192.6
192.7
195.5
191.7
191.7
188.9
188.5
BMCK77
BMCK77
BMCK77
VVSW77
VVSW77
VVSW77
PEJ82
WaTa80
WaTa80
O
HHJ70
HHJ70
MECC73
MECC73
MECC73
MECC73
MECC73
MECC73
MECC73
BrWh78
MECC73
MECC73
MECC73
MECC73
MECC73
HJGN70, KOK83, WRDM79
HHJ70
BrWh78
NGDS75
HHJ70, RNS73
RNS73
HHJ70
HHJ70
HHJ70
HHJ70
HHJ70
HHJ70
BCGH73
BCGH73
BCGH73
HHJ70
HHJ70
HHJ70
HHJ70
HHJ70
HHJ70
BCGH73
HHJ70
HHJ70
Rigg72
Rigg72
Ba 3d5/2
Ba
Ba
BaS
BaO
BaO
BaO
Ba(NO3)2
BaCO3
BaSO4
BaSO4
BaSO4
BaCiO4
BaMoO4
BaRh2O4
BaMNN
Ba
BaO
BaO
BaSO4
Be Is
Be
Be
BeO
BeMoO4
BeRh2O4
BeF2
BeF2
NaBeF3
Na2BeF4
Bi4f
Bi
Bi
Bi
Bi
Bi2S3
B1I3
BiF3
Bi2O3
Bi2O3
Bi2O3
BiOCl
NaBiO3
B12MOO6
Bi2Ti2O7
(BiO)2Cr2O7
Bi2(SO4)3 • H2O
Br3d
KBr
CsBr
CsBr
780.6
779.3
779.8
779.9
779.6
779.1
780.7
779.9
780.8
780.4
779.9
778.9
779.1
779.6
602.0
597.5
598.4
596.1
111.8
111.7
113.8
113.7
113.8
115.3
116.1
115.3
114.7
157.0
156.9
157.0
157.0
158.9
159.3
160.8
158.8
159.3
159.8
159.9
159.1
158.3
159.7
159.6
161.2
68.8
68.1
69.6
VaVe80
SiWo80
WRDM79
SiWo80
VaVe80
CLSW83
CLSW83
Wagn77
CLSW83
SiWo80
ACHT73
NFS82
NFS82
VaVe80
WRDM79
VaVe80
Wagn77
HJGN70, SMKM77, WRDM79
HJGN70, KOK83, NFS82
NFS82
NFS82
NKBP73
HJGN70
NKBP73
NKBP73
SFS77
LKMP73
WRDM79, MSV73
MSV73
MSV73
MSV73
NGDS75
MSV73
DSBG82
MSV73
MSV73
MaWo75
MSV73
MSV73
MSV73
MVS73
Shlq78
$ PHYSICAL ELECTRONICS
215

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
RbBr
KBr
NaBr
LiBr
CdBr2
CuBr2
HgBr2
PbBr2
ZnBr2
Co(NH3)6SbBr6
Ni(NH3)6Br2
Pt(NH3)4Br2
K2PtBr4
K2PtBr6
Cs3Sb2Br9
Rb3Sb2Br9
Bromanil
Ph4AsBr
Ph4SbBr
(Me4N)2ZnBr4
(EL,N)2MnBr4
(Et4N)2NiBr4
H3POBBr3
H3PBBr3
Br2Pt(CH3CONH)4
BrLMM
LiBr
NaBr
KBr
KB1O3
Cl6H33Me3NBr
Cls
Graphite
Graphite
Cr3C2
Fe3C
HfC
Mo2C
NbC
Ni3C
TaC
TiC
VC
we
ZrC
KCN
NaCN
K3Co(CN)6
K3Cr(CN)6
K3Fe(CN)6
K4Fe(CN)6
K3Mn(CN)6
Na4Mn(CN)6
K4V(CN)6
68.4
68.8
68.8
69.2
69.2
68.9
69.0
68.7
70.0
68.9
68.7
68.4
69.3
69.2
70.8
70.1
70.1
66.7
68.0
67.8
67.9
68.9
69.3
69.6
68.7
1389.2
1388.3
1388.0
1384.4
1390.1
284.5
284.3
282.8
283.9
280.8
282.7
281.9
283.9
281.9
281.6
282.2
282.8
281.1
286.1
286.2
285.9
283.9
283.9
283.5
284.0
284.0
285.5
MVS73
MVS73, WaTa80
MVS73, Shlq78
MVS73
SATD73
VWHS81
SATD73
Nefe82
SATD73
Tric74
NZB78
SNMK78
SNMK78
SNMK78
Tric74
Tric74
OYK74
HVV79
HVV79
EMGK74
EMGK74
EMGK74
HVV79
HVV79
NeSa78
Wagn78
Wagn78
WaTa80
Wagn78
Wagn78
<D
JHBK73
RHJF69
ShTr75
RHJF69
RHJF69
RHJF69
SiLe78
RHJF69
RHJF69, IKIM73
RHJF69
RHJF69, CoRa76
RHJF69
Vann76
Vann76
Vann76
Vann76, ZeHa71
Vann76, ZeHa71
Vann76
Vann76
Vann76
Vann76
Cr(CO)6
Co(CO)3NO
Fe(CO)5
Fe(CO)2(NO)2
Mn2(CO)io
Ni(CO)4
(Mn(CO)4Br)2
BrMn(CO)5
Ag2CO3
BaCO3
CaCO3
CdCO3
Li2CO3
Na2CO3
NaHCO3
SrCO3
CS2
C02
CCU
COF2
CF4
Cyclohexane
Benzene
C6H5C*H3
C6H5CH3 (C*CH3)
C6H5CH3 (C*-H)
Fe(C5H5)2
Cr(C6H6)2
CH3C*H2OH
CH3COOC*H2CH3
C6F6
Inositol
Hydroquinone
(C*HCOH)3
(CHC*OH)3
(CH3C*H2)2O
HCHO
(CH3C*HO)3
CH3C*OCH3
CF3C*OCH3
C*F3COCH3
(CO)6
CH3C*OOH
CH3C*OONa
CH3C*OONa
CH3C*OOAg
HOOCCOOH
(COONa)2
CF3C*OOEt
C*F3COOEt
Cl3C*COONa
Cl3CC*OONa
F3C*COONa
F3CC*OONa
p-Benzoquinone
287.9
288.2
288.0
288.2
287.5
288.2
287.6
288.0
288.4
289.4
289.6
289.3
289.8
289.4
290.0
289.5
287.0
291.9
292.4
293.9
296.7
285.2
284.7
284.7
285.1
285.0
284.5
284.4
286.3
286.9
289.5
286.7
286.4
284.8
286.6
286.5
287.7
287.6
287.9
288.5
292.6
288.3
289.3
288.2
288.8
288.3
289.9
289.0
290.4
292.9
289.5
288.3
292.1
288.9
287.4
BCGH72, BCHM72,
KTWY76, PFD73
BCGH72
BCGH72
BCGH72
VWVB77
BCGH72
VWVB77
VWVB77
HGW75
CLSW83
CLSW83
HGW75
CSFG79
GHHL70, HHDD81
GHHL70
CLSW83
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70, LaFo76, CKAM72
CKM71
CKM71
CKM71
BCDH73
KTWY76
GHHL70
GHHL70
CKAM72
GHHL70
OYK74
GHHL70
GHHL70
GHHL70, ClTh78
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
HHDD81
GHHL70
HHDD81
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
OYK74
216
0 PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
Cr(acac)3
CH3CH2OCOCI
EtOC*OCl
(PhO^CO
HC*(OCH3)3
HCOONH4
OC*(OCH3)2
(XC*H2COOH)2
0(CH2C*OOH)2
CH3C*H2C1
CH2Br2
CH2CI2
HCF3
HCC13
C6H5CI (C*C1)
C6HsCl(C*H)
C6H5Br
QH5F(C*F)
C6H5F(C*H)
QHCls
C6HF5(C*H)
C6HF5(C*F)
C6F6
CI2FCCFCI2
C1F2C*CFC12
C*H3CN
CH3C*N
CH3CONH2
EtNH2
EtNH2BF3
PI1NH2
C(NH2)3C1
(CH2)6N4
C5H5N
PhCN
C*H3CNBF3
CH3C*NBF3
Triazole
NC*N=C(NH2)2
NCN=C*(NH2)2
H2NCH2C*OONa
H2NCONH2
H2NCSNH2
H2NCONHCONH2
PhNO2
PhjP
Ph3PO
Ph4PBr
Ph4Sn
P(CH2=CHC1)
P(CH2=CHOH)
P(HOCOCH=CH2)
P(NaOCOCMe=CH2)
P(C*H3OCOCH=CH2)
P(CH3OC*OCH=CH2)
P(MeOCOCMe=CH2)
286.0
287.1
290.8
290.7
289.7
288.4
291.2
286.7
289.5
286.1
287.1
287.8
294.7
289.6
287.1
285.7
285.1
287.8
285.6
286.1
286.9
289.2
288.7
291.7
292.9
286.3
287.2
288.4
285.6
286.8
284.6
289.4
286.9
285.5
285.4
287.3
289.1
286.3
286.4
288.2
287.9
288.7
288.0
289.3
285.3
284.9
284.6
285.4
284.6
286.3
286.3
289.0
288.1
286.4
288.6
289.0
ZeHa71
GHHL70
GHHL70
ClTh78
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
CKM71
CKM71
LaFo76
CKM71
CKM71
CKAM75
CKAM72
CKAM72
GHHL70
GHHL70
GHHL70
BCGH73
BCGH73
SNMK78
BCGH73, GHHL70
BCGH73
LaFo76
LeRa77
GHHL70
BCGH73
LaFo76
BCGH73
BCGH73
GHHL70
LeRa77
LeRa77
GHHL70
GHHL70, LeRa77
LeRa77, SrWa77
YYS78
LaFo76
LMF80
LMF80
LMF80, LaFo76
BALS76
PRCV77
PRCV77
HHDD81
HHDD81
ClTh78
ClTh78
HHDD81
PVA (-CH2C*HOH-)n
Cellulose
PEO (-CH2C*H2O-)n
poly (-CH2CH2C=O-)n
C6H4(C*OOH)2
HOOC*(CH2)4C*OOH
Sodium Stearate
Mylar Polyester C*-H
Mylar Polyester C*-0
Mylar Polyester C*O2
Polycarbonate-OC*O2-
Teflon (-CF2CF2-)n
(-C*FHCF2-)n
(-CFHC*F2-)n
(-CFHCFH-)n
(-C*H2CF2-)
(-CH2C*F2-)n
(-C*H2CFH-)n
(-CH2C*FH-)n
PVC (-C*H2CHC1-)
PVC (-CH2C*HC1-)
Ca2p
Ca
CaCO3
Ca
Ca
CaH2
CaSe
CaS
CaCl2
CaF2
CaO
CaO
CaO
CaCO3
Ca(NO3)2
CaCrO4
CaMoO4
CaRh2O4
CaSO4
CaWO4
Ca3Si309
CaLMM
Ca
CaO
CaCO3
CaCl2
CaF2
Cd 3d5/2
Cd
Cd
286.1 PRCV77
286.2 Wagn81
286.1 Wagn81
287.4 Wagn81
288.9 Wagn81
288.9 Wagn81
288.3 Wagn81
284.85 O
286.3 Wagn81
288.7 Wagn81
290.4 Wagn81
292.2 CFK73
289.3 CFK73
291.6 CFK73
288.4 CFK73
286.3 CFK73
290.8 CFK73
285.9 CFK73
288.0 CFK73
284.9 PRCV77
286.5 PRCV77
346.3 <D
346.6 <D
345.9 VaVe80
346.8 SMKM77
346.7 FMUK77
345.9 FMUK77
346.5 FMUK77
348.3 Wagn77
347.8 Wagn77, NSLS77
346.1 InYa81
346.7 FMUK77
347.3 VaVe80
346.9 Wagn77, CLSW83, WRDM79
348.7 CLSW83
346.3 ACHT73
347.2 NFS82
345.7 NFS82
348.0 CLSW83
346.5 Nefe82
347.0 WPHK82
298.2 VaVe80
292.5 VaVe80
291.9 WRDM79, Wagn77
291.9 Wagn77
289.1 Wagn77
405.1 O
405.0 GaWi77, HSBS81,WRDM79, Wagn75
404.9 HSBS81
$ PHYSICAL ELECTRONICS
217

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
Hgo.sCdo.2Te
CdTe
CdSe
CdS
Cdl2
CdBr2
CdCl2
CdF2
CdO
CdO2
Cd(OH)2
CdCO3
CdRh2O4
CdMNN
Cd
CdTe
CdSe
CdS
Cdl2
CdF2
CdO
Ce3d
Ce
Ce
CeAl2
CePd3
CeSe
CeCu2Si2
CeO2
CeO2
CeH3
C12p
KC1
CsCl
KC1
NaCl
LiCl
RbCl
CuCl2
NiCl2
PdCl2
RhCl3
RhCl3 • 12H2O
SbCl5
ZnCl2
K2IiCl6
K2MoCl6
K2OsCl6
K2PdCL,
K2PtCL,
K2PtCl6
404.6
404.9
405.3
405.3
405.4
406.0
406.1
405.9
405.2
403.6
405.0
405.1
404.7
383.8
382.4
381.4
381.1
381.0
378.8
382.2
883.8
883.9
883.5
884.3
884.3
883.6
881.8
882.4
886.0
198.5
196.3
198.2
198.4
198.5
197.9
200.0
199.4
198.9
199.3
199.2
199.7
198.5
198.6
198.4
198.6
198.8
198.8
198.8
SBB80
SBB80, GaWi77
GaWi77
GaWi77
GaWi77
SATD73
SATD73
GaWi77, SATD73, Wagn77
GaWi77, NGDS75, NFS82, SBB80
HGW75
WRDM79, HGW75
HGW75
NFS82
WRDM79, Wagn75,
GaWi77
GaWi77
GaWi77
GaWi77
GaWi77
GaWi77
GaWi77
O
ScOs82
LFBC80
LFBC80
LFBC80
LFBC80
WRDM79
NGDS75, SaRa80
ScOs82
O
MVS73
MVS73, NSLS77, YYS78
MVS73, NSLS77, SGSO70
MVS73, CSFG79
MVS73
VWHS81
KlHe83, TRLK73, YYS 78
NKBP73
OIIT79
CMHL77
BCH75
KlHe83
NSBN77, LeBr72, CoHe72
CoHe72
CoHe72, LeBr72
NKBP73
CMHL77, SNMK78
CoHe72, LeBr72, SNMK78
K2ReCl6
K2ReCl6
K2SnCl6
K2WC16
K3IrCl6
K3RhCl6
Na2PdCl4
Co(NH3)6SbCl6
Pt(NH3)2Cl2
Pt(NH3)4Cl2
Pt(NH3)6Cl4
Rh(NH3)6Cl3
Cs3Sb2Cl9
CsSbCl6
KIrCl5NO
IC1
CsClO4
KC1O3
KC1O4
LiClO4
NaC104
Ni(NH3)6(C104)2
NiC104 . 6H2O
RbC104
Me^Cl
EL.NC1
Ph^Cl
NH4C1
Chlorobenzene
Pentachlorobenzene
ClRh(Ph3P)3
(Et3P)2PtHCl
(Ph3P)2PtHCl, trans
(Et3P)2PtCl4
(Et3P)2PtCl2
(Ph3P)2NiCl2
(Ph3P)2NiCl2
Ph3PBCl3
Ph3POBCl3
(Nb6Cl*12)Cl6(Et4N)3
(Nb6ClI2)Cl*6(Et4N)3
CdCl2
CuCl2
HgCl2
InCl
InCl3
TiCL,
UC13
UCL,
UC15
UOC1
UOC12
ZnCl2
(NH4)2PtCL,
OPC13
198.4
199.3
198.4
199.0
198.7
198.4
198.8
199.3
198.9
198.8
197.8
197.8
198.1
198.0
199.2
198.9
200.1
208.2
206.5
208.8
209.0
208.5
208.2
208.6
208.4
196.2
196.4
196.1
197.9
200.1
200.0
198.0
198.0
197.1
199.2
198.1
199.0
198.3
199.4
198.9
199.4
197.5
199.0
199.2
198.7
198.4
199.0
198.2
198.1
197.7
197.7
198.5
198.3
199.7
198.2
201.7
CoHe72
LeBr72
CoHe72
LeBr72
NSBN77
SNMK78
HUGH79
SeTs76
Tric74
CMHL77, Nefe78
SNMK78
SNMK78
Nefe78
BCH75, Tric74
Tric74
NSBN77
Sher76
MVS73
MVS73
MVS73
MVS73
MVS73
NZB78
NZB78
MVS73
EMGK74
EMGK74
HVV79
EMGK74
CKAM75
CKAM75
Nefe78, OIIT79, MMRC72
Rigg72
CBA73
LeBr72, Nefe78, Rigg72
Rigg72
BNSA70, STHU76
NZB78
HVV79
HVV79
BeWa79
BeWa79
SATD73
YYS78
SATD73
FHT77
FHT77
MRV83
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
SATD73
KaE179
FlWe75
218
(D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
KC103
KC104
HClPt(Ph3P)2
HClPt(Et3P)2
Cl2Pt(Ph3P)2
PluPCuCh
ph4PCuCl3
C6H5C1
C6H5CC13
C(NH2)3C1
p(CH2=CHCl)
Co2p
Co
CoO
Co
Co
C02OS1180
Co2B
CoB
CoS
C0F2
C0F2 • 4H2O
C0F3
CoO
CoO
CO3O4
Co3O4
Co2O3
CoOOH
Co(OH)2
CoAl2O4
CoAl204
CoCr2O4
CoFe2O4
CoMn2O4
C0M004
C0M004
CoRh204
COSO4
Z11CO2O4
CS2C0I4
Cs2CoBr4
CS2C0CI4
K3Co(C2O4)3
K3Co(NO2)6
Co(CO)3NO
K3Co(CN)6
K3Co(CN)6
Co(NH3)3Cl3
Co(NH3)5Cl3
Co(NH3)6Cl3
Co(NH3)6Cl3
co(C5H5)2
Co(C5H5)2
206.5
208.7
197.9
198.0
198.0
198.9
199.0
201.0
201.0
198.0
200.0
778.3
780.4
778.3
778.1
777.9
778.4
778.0
781.9
783.0
782.6
782.4
780.2
780.4
780.2
779.5
779.9
780.0
781.0
780.8
781.9
780.2
779.7
780.0
780.9
782.8
781.2
784.0
780.4
780.5
780.8
781.0
780.9
781.8
780.7
781.2
782.1
781.4
781.9
781.1
781.8
779.1
781.3
NZK77
NZK77
AL77
AL77
AL77
FSJL83
FSJL83
CKM71
CKM71
LeRa77
PRCV77, WRDM79
LANM81
WRDM79
ThSh78
MECC73
MECC73
Limo81
CSC72
NBMO73
CSC72
WRDM79
Kim75, NGDS75,
NFS82, CBR76
NGDS75, OkHi76
GPDG79
McCo75
McCo75
McCo75
OkHi76
PCLH76
OkHi76
OkHi76
OkHi76
GPDG79
PCLH76
NFS82
Limo81
OkHi76
NBMO73
NBMO73
NBMO73
CSC72
NBMO73
BCGH72
OkHi76
Vann76
NBMO73
YNAB77
CSC72
NBMO73
BCDH73
ClAd7l
Br4Co(Et4N)2
Cl4Co(Et4N)2
Cl2Co(thiourea)2
Cr2p
Cr
Cr2O3
Cr
Cr
Cr2N
CrN
CrB2
Cr2S3
Crl3
CrBr3
CrCl3
Cr2O3
CrO2
CrO3
CrF3
C1O3
Cr(OH)3
CrOOH
Cr(CO)6
Cr(CO)6
Cs2Cr04
Cs2Cr207
CuCrO2
CuCr2O4
K2Cr207
LaCrO3
Li2CrO4
LiCrO2
Na2Cr04
Na2CrO4
Na2Cr207
Na3CrO4
Na4CrO4
NaCrO2
ZnCr2O4
BaCrO4
CaCrO4
(NH4)3CrF6
Cr(NH3)6Cl3
K,CrfCN)6
K3CrF6
Cl3Cr(urea)6
CrtCsHsh
Cr(C5H5)(C7H7)
Cr(C6H6)2
Cr(C6H6)2
Cr(CO)5PH3
780.1
780.6
780.9
574.4
576.9
574.3
574.3
576.1
575.8
574.3
574.8
576.7
576.2
577.4
576.8
576.3
578.3
580.3
579.8
577.3
577.0
576.3
577.0
579.8
579.5
576.4
577.1
579.9
575.8
579.8
577.0
579.8
580.5
579.4
578.5
577.9
577.1
577.2
579.1
578.9
579.5
578.5
576.3
583.0
577.7
576.1
579.9
574.8
576.3
574.4
574.1
575.4
575.3
EMGK74
EMGK74
NBMO73
<D
LANM81
WRDM79
RoRo76
CTA R*7&
MECC73
CSC72
CSC72
CSC72
CSC72
BDFP81, CDFM82, CSC72,
WRDM79, NGDS75
IIKK76
ACHT73
CSC72
CDFM82
CDFM82
IIKK76
BCGH72, BCHM72
PFD73
AT76
AT76
ACHT73
CDFM82
NSSP80
HoTh80
ACHT73
ACHT73
ACHT73
LaKe76
ACHT73
LaKe76
LaKe76
LaKe76, ACHT73
BDFP81
AlTu76
ACHT73
AITu76
AlTu76
Vann76, ZeHa71
AlTu76
AlTu76
ZeHa71
AlTu76
BCDH73, CDH 74, GSMJ74
ClAd71
CDH74, GSMJ74
CDH74
PFD73
BCGH72
$ PHYSICAL ELECTRONICS
219

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
CrtCO)5NH3
Cr(CO)3C6H6
Cr(CO)3C6H6
Cr(CO)5(Me3P)
Cl3Cr(C5H5)
ICr(C6H6)
CrLMM
Cr
Cs 3d5/2
Cs
Cs
Csl
CsBr
CsCl
CsF
CsN3
Cs2SO4
Cs3PO4
CS4P2O7
CsClO4
Cs2CrO4
Cs2Cr2O7
CsOH
CsMNN
Cs2SO4
CsOH
Cu2p
Cu
CuO
Cu
Cu
Cu
Cu
Cu
Cu
Cu
CU95S115
Cu3P
Cu3P
Cu2Se
CuSe
CuAgSe
CuInSe2
Cu2S
CuS
CuS
CuS
CuS
CuBr
575.5
575.7
576.3
575.2
576.1
576.4
527.2
726.4
726.0
723.9
724.0
723.7
724.0
723.6
723.9
723.9
723.8
724.2
724.5
723.9
724.5
568.4
586.7
932.7
933.6
932.6
932.6
932.6
932.6
932.7
932.7
932.6
932.6
932.5
932.2
932.2
931.9
932.0
931.9
931.9
932.5
932.2
933.2
931.9
935.0
932.1
BCGH72, BCHM72
CDH74
PFD73
BCGH72, BCHM72
GSMJ74
CDH74
WRDM79
KDR77
MVS73
MVS73
MVS73
MVS73
SGRS72
Wagn77
MVS73
MVS73
MVS73
ACHT73
ACHT73
WRDM79
Wagn77
WRDM79
<D
O
ALMP82
LANM81
BiSw80
BiSw80
BiSw80
PEJ82
Asam76, GaWi77, KPML73,
WRDM79, Wagn75
VanO77
Hegd82
NSDU75
NSDU75
RRD78
RRD78
RRD78
KJID81
Wagn75
RRD78
Limo81
BSRR81
NSSP80
BrFr74
CuBr2
CuCl
CuCl2
CuCl2
CuCl2
CuCl2
CuF2
CuF2
CuF2
Cu2O
CuO
Cu(OH)2
Cu(NO3)2
CuCN
CuC(CN)3
CuCO3
CuSO4
CuSO4
CuSiO3
Cu2Mo3Oio
Cu3Mo2O9
CuCr2O4
CuCrO2
CuFe2O4
CuFeO2
CuMoO4
CuRh2O4
Cu(OAc)2
Cu(OAc)2
Cu(acac)2
Cu(8-Hydrozyquinol.)
Cu Salicylaldoxime
Cu4Cu(Et4N)2
Cu2Cu(H2NCONHCONH2)20
CuLMM
Cu
Cu
Cu
Cu
Cu
CU64ZD36
Cu2Se
CuSe
CuAgSe
Cu2S
CuS
CuBr2
CuCl
CuCl
CuCl2
CuF2
CuF2
932.3
932.5
934.4
935.2
934.8
935.6
936.1
937.0
936.8
932.5
933.7
935.1
935.5
933.1
933.2
935.0
934.9
935.5
934.9
931.6
934.1
934.6
932.3
933.8
932.6
934.1
934.4
931.8
935.0
934.5
935.0
934.0
932.5
935.8
918.6
918.7
918.6
918.7
918.6
918.6
917.6
918.4
917.7
917.4
917.9
916.9
915.0
915.6
915.3
916.0
914.8
VWHS81
GaWi77, Wagn75
GaWi77
WRDM79
VWHS81
YYS78
GaWi77
WRDM79
VWHS81
CDFM82, GaWi77, Wagn75,
HMUZ78, MSSS81, Scho73b
HMUZ78, GaWi77,
WRDM79, MSSS81
MSSS81
NZK77
Wagn75
NZK77
WRDM79
Limo81
NZK77
WRDM79
HMUZ78
HMUZ78
CDFM82
ACHT73
LDDB80
LDDB80
HMUZ78
NFS82
BrFr74
YYS79
BrFr74
BrFr74
BuBu74
EMGK74
YYS78
BiSw80
BiSw80
BiSw80
PEJ82
KPML73, WRDM79, Wagn75,
Asam76, GaWi77
VanO77
RRD78
RRD78
RRD78
Wagn75
RRD78
VWHS81
Wagn75
GaWi77
WRDM79, VWHS81, GaWi77
GaWi77
WRDM79
220
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
C11F2
Cu2O
Cu2O
Cu2O
Cu2O
CuO
Cu(OH)2
Cu(NO3)2
CuCN
CuC(CN)3
C11CO3
CuSO4
CuSiO3
CU2M03O10
CU3MO2O9
CuCr2O4
CuMoO4
Dy4d
Dy
Dy2O3
Dy3ds/2
Dy
Dy2O3
Er4d
Er
Er
Er2O3
Eu3ds/2
Eu
Eu4d
Eu
EU2O3
Fls
LiF
CsF
KF
KF
LiF
LiF
NaF
NaF
NaF
RbF
RbF
BaF2
BaF2
CaF2
CaF2
914.4
916.2
916.2
916.6
917.2
918.1
916.2
915.3
914.5
914.5
916.3
915.6
915.2
916.5
916.6
918.0
916.6
152.4
167.7
1295.5
1298.9
167.3
169.4
168.7
1125.6
128.2
135.9
684.9
685.9
683.9
684.4
685.1
685.0
684.5
684.5
683.7
683.6
682.9
683.7
684.3
684.8
684.8
VWHS81
CDFM82, HMUZ78
CDFM82, GaWi77, Wagn75
HMUZ78, MSSS81,Scho73b
MSSS81,Wagn75
GaWi77
GaWi77,MSSS81,Scho73b
MSSS81
NZK77
Wagn75
NZK77
WRDM79
NZK77
WRDM79
HMUZ78
HMUZ78
CDFM82
HMUZ78
SaRa80
SaRa80
WRDM79
WRDM79
NNBF68
NNBF68
WRDM79
NBK74, MVS73
PMDS77
WRDM79
MVS73, NBK74
WRDM79
NBK74, NSLS77
MVS73
MVS73
NBK74
WRDM79
NBK74
WRDM79
NBK74, NSLS77
MgF2
MgF2
SrF2
SrF2
AgF
BeF2
CdF2
CdF2
CdF2
CuF2
CuF2
HgF2
MnF2
NiF2
NiF2 • 4H2O
PbF2
ZnF2
ZnF2
A1F3 • 3H2O
GaF3 • 3H2O
GdF3
InF3
InF3 • 3H2O
LaF3
NdF3
PrF3
SmF3
YF3
UF3
UF4
UF5
ThF4
HfF4
ZrF4
NaBeF3
Na2BeF4
NaBF4
NF4BF4
Na3AlF6
Na2SiF6
Na2SiF6
K2SiF6
K2TiF6
K2TiF6
Na2TiF6
K3FeF6
K2NiF6
K2GeF6
Na2GeF6
Na2ZrF6
KZrF5 • H20
K3ZrF7
NaSnF3
K2SnF6 • H20
685.8
685.7
685.0
684.5
682.7
685.8
684.5
684.8
684.2
684.5
685.9
686.0
684.8
685.0
684.7
683.6
684.6
685.1
686.3
685.2
684.8
685.2
685.3
684.5
684.8
684.6
684.6
685.3
685.3
684.8
684.8
684.9
685.4
685.1
685.7
685.2
687.0
694.2
685.5
686.0
686.4
686.6
685.0
684.9
685.3
684.0
687.6
685.2
685.9
684.6
685.0
684.8
684.3
685.3
685.1
683.6
Wagn80
NBK74
WRDM79
NBK74
GaWi77
NBK74, NKBP73
GaWi77, WRDM79
NBK74, SATD73
NSLS77
GaWi77, WRDM79
VWHS81
SATD73
WRDM79
GaWi77, WRDM79
NSLS77
WRDM79
GaWi77, Wagn77
NBK74
NBK74, NKBP73
NBK74, NKBP73
McTh76
WRDM79
NBK74, NKBP73
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
TBVL82
TBVL82, PMDS77
TBVL82
WRDM79
WRDM79
NKBP73
NKBP73
NKBP73
WRDM79
RNS73
WRDM79
Wagn77
NSLS77
NBK74
WRDM79
NBK74
Wagn77
WRDM79
TRLK73
NBK74
WRDM79
NBK74, NKBP73
WRDM79
NKBP73
NKBP73
WRDM79
NBK74
BCH75
$ PHYSICAL ELECTRONICS
221

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
K2SbF5
KSbF6
KSb2F7
Na2SbF5
NaSbF6
K3RhF6
K2NbF7
K2NbF7
K2TaF7
K2TaF7
NaTaF6
Na2TaF7
Na3TaF8
K2UF6
EuOF
LaOF
NdOF
PrOF
YOF
Cs2MoO2F4
Cs2WO2F4
UO2F2
p-(CF2=CF2)
NiOOCCFi
CH3CNBF3
NH3BF3
C5H5NBF3
EtNH2BF3
Et4NSbF6
Ph3PBF3
Ph3POBF3
FKLL
CsF
LiF
NaF
BaF2
CaF2
MgF2
SrF2
AgF
CdF2
CuF2
CuF2
CuF2
NiF2
PbF2
ZnF2
InF3
LaF3
NdF3
PrF3
SmF3
YF3
ThF4
HfF4
683.9
686.6
684.3
683.4
685.1
685.7
685.4
685.2
685.2
685.1
685.2
685.6
685.5
684.7
685.3
685.2
685.1
685.0
685.5
684.7
684.7
685.6
689.0
688.4
687.0
686.6
685.6
686.6
684.7
685.7
685.8
653.8
654.7
655.0
656.2
655.4
654.4
656.3
659.3
656.0
657.0
656.2
656.2
655.5
658.5
655.6
656.4
658.0
657.0
657.2
657.0
655.8
657.0
655.3
Tric74
Wagn77
Tric74
Tric74
BCH75
Nefe78
WRDM79
NBK74
WRDM79
NBK74
NKBP73
NKBP73
NKBP73
PMDS77
RGBH80
RGBH80
RGBH80
RGBH80
RGBH80
NKBP73
NKBP73
TBVL82
Wagn77
WRDM79
BCGH73
BCGH73
BCGH73
BCGH73
BCH75
HVV79
HVV79
WRDM79
WRDM79
Wagn77
WRDM79
WRDM79
Wagn77
WRDM79
GaWi77
GaWi77, WRDM79
GaWi77
WRDM79
WRDM79
GaWi77, WRDM79
WRDM79
GaWi77, WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
NaBF4
Na3AlF6
Na2SiF6
K2TiF6
Na2TiF6
K3FeF6
Na2GeF6
Na2ZrF6
NaSnF3
KSbF6
K2NbF7
K2TaF7
p.(CF2=CF2)
NiOOCCF3
Fe2p
Fe
Fe2O3
Fe
Fe
Fe
Fe3Al
Fe3Si
Fe2B
FeB
Fe3C
FeS
FeS
FeS2 (markasite, pyr)
KFeS2
FeBr2
FeBr3
FeCl2
FeCl3
FeF2
FeF3
FeO
Fe3O4
Fe3O4
Fe2O3
Fe2O3, alpha
Fe2O3, gamma
FeOOH, alpha
FeOOH, gamma
CoFe2O4
Fe(C2O4)3 ■ 6H2O
FeSO4
K3FeF6
NiFe2O4
K3Fe(CN)6
K4Fe(CN)6
K4Fe(CN)6
Na2Fe(CN)3(NO)
Na3Fe(CN)5(N2O)
Na4Fe(CN)5(NO2)
Na3Fe(CN)5NH3
652.8
654.1
653.0
655.7
655.1
656.0
654.0
655.1
655.3
656.6
655.2
655.0
652.4
652.9
707.0
710.9
706.7
706.8
707.0
707.6
707.5
706.9
707.1
708.1
710.3
712.2
706.7
708.7
710.3
710.1
710.6
711.3
711.3
714.2
709.4
708.2
710.4
710.8
710.9
710.9
711.8
711.3
710.5
713.6
712.1
714.4
710.5
709.6
707.1
708.5
709.7
707.4
706.8
707.6
WRDM79
WRDM79
Wagn77
WRDM79
Wagn77
WRDM79
WRDM79
WRDM79
WRDM79
Wagn77
WRDM79
WRDM79
Wagn77
WRDM79
<D
LANM81
Asam76
WRDM79, McZe77
ShTr75
ShTr75
MECC73
MECC73
ShTr75
CSC72
Bind73, Limo81
Bind73
Bind73
CSC72
CSC72
CSC72
CSC72
CSC72
CSC72
McZe77
McZe77
OkHi76
WRDM79, NGDS75
McZe77
McZe77
McZe77
KoNa80
McZe77
Kilk73
Limo81
CSC72
McZe77
Vann76
Vann76
YNNA77
YNNA77
YNNA77
YNNA77
YNNA77
222
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
Na3Fe(CN)5N2H4
Fe(CO)5
Fe(CO)2(NO)2
KFfcCNOhSs • 2H20
Fe(SMe)(CO)3
Fe(C5H5)2
I3Fe(C5H5)2
Fe(C5H4COOH)2
Fe(phthalocyanine)
FeLMM
Fe
Ga 2p3/2
fia
vJa
Ga
GaP
Ga2O3
Ga2O3
GaLMM
Ga
GaAs
GaAs
GaP
GaP
GaN
Ga2Se3
Ga2Se3
Ga2O3
Ga2O3
Ga2O3
Ga3d
Ga
GaSb
GaAs
GaAs
GaP
GaP
GaP
GaP
GaN
AlGaAs
Ga2Se3
Ga2Se3
Ga2O3
Ga2O3
Ga2O3
Ga2O3
Gd4d
Gd
707.7
709.6
709.5
708.9
708.6
707.7
709.9
708.4
709.1
702.4
1116.7
1116.5
1116.8
1116.9
1117.8
1068.2
1066.3
1067.1
1065.6
1066.8
1064.5
1065.2
1065.6
1061.6
1062.4
1062.9
18.6
20.2
18.8
19.2
18.8
19.3
19.9
18.7
19.5
19.0
19.7
19.9
20.5
20.2
20.5
21.0
i An a
YNNA77
BCGH72
BCGH72
Nefe78
BBFR77
FWUM79, BCDH73,
CDH74, Nefe78
CDH74
FWUM79
MSV79
WRDM79
O
Scho73a
NSDU75
BDFP81
Scho73a
WRDM79, MINN78, Scho73a
MINN78
MINN78
MINN78, MIN81
MIN81
HeMa80
ITI82
ITI82
MINN78
ITI82
Scho72a
MINN78, LBHK73,
Scho73a, WRDM79
LBHK73
LPMK74
IMNN79, MINN78, Tayl82,
MIN81
NIMN78, IMNN79
LBHK73, MIN81
LPMK74
HeMa80
Tayl82
ITI82
ITI82
GGVL79
LBHK73, Scho73a
ITI82
MINN78
Gd2O3
Gd3d
Gd
Gd2O3
Ge 2p3/2
Ge
Ge
GeS2
GeS2
GeN4
Gel2
GeF2
GeO2
Na2Ge03
Na2GeF6
K2GeF6
Ph4Ge
GeLMM
Ge
Ge
Ge
GeTe
GeSe
GeS
GeO2
Na2GeF6
Ge3d
Ge
Ge
Ge
Ge
GeAs2
GeTe3As2
GeS2TeAs2
GeS3As
GeTe2
GeTe
GeTe
GeSe2
ueoe
vjeo2
GeS
GeOo
Ph..fif»
rIl4vJC
Ph3GeI
Ph3GeBr
Ph3GeCl
Hf4f
Hf
143.8
1187.0
1189.0
1217.2
1217.4
1219.8
1219.8
1218.8
1218.2
1220.7
1220.4
1218.9
1221.3
1220.7
1218.9
1146.2
1145.4
1145.1
1144.8
1143.8
1143.7
1137.7
1135.7
29.4
29.3
29.0
29.1
29.7
29.9
30.2
30.4
30.1
30.0
29.7
31.0
30.9
30.4
30.5
29.5
32.5
31.2
31.8
31.8
31.8
14.3
SaRa80
<*>
SaRa80
McWe76
TLR78, MoVa73, Wagn75
MoVa73
MoVa73
TLR78
MoVa73
MoVa73
MoVa73, Wagn75
MoVa73
Wagn75
MoVa73
MoVa73
McWe76
SFS77
Wagn75, WRDM79
SFS77
SFS77
SFS77
Wagn75
Wagn75
<D
McWe76
SFS77
HKMP74, UeOd82, WRDM79
HKMP74
HKMP74
HKMP74
HKMP74
HKMP74
SFS77
HKMP74
UeOd82
SFS77
HKMP74
SFS77
HKMP74
HKMP74
HWVV74
HWVV74
HWVV74
HWVV74
$ PHYSICAL ELECTRONICS
223

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
Hf
HfO2
Hf 4rf
1.JLI fU
HfO2
Hg4f
HgS (cinnabar)
Hg
Hgo8Cdo.2Te
HgS
Hgl2
HgBr2
HgCl2
HgF2
HgO
Et2NC6H4Hg0Ac
Cl2Hg(H2NCONHCONH2)2
Hg(thiodibenzoylme)2
(Ph4P)2Hg(SCN)4
Ho4d
Ho
I3ds/2
KI
I2
Csl
Rbl
KI
Nal
Lil
Lil
Agl
Cdl
Cdl
Cul
Hgl2
Inl
Inl3
Nil2
Nil2 • 6H2O
Znl2
Znl2
NaIO3
NaIO4
HIO3
H5IO6
I2O5
IC1
ICI3
Cs3Sb2l9
Rb3Sb2l9
Na(NiIO6) • H20
14.4
16.7
213.2
101.0
99.8
100.2
100.8
100.7
101.0
101.4
101.2
100.8
101.3
101.3
101.3
101.4
159.6
619.3
619.9
618.2
618.2
618.8
618.6
619.7
618.9
619.4
619.2
619.4
619.0
619.4
619.0
619.1
619.0
619.7
619.8
619.7
623.5
624.0
623.1
623.0
623.3
621.5
622.5
618.5
620.8
624.4
WRDM79
SaRa80
SaRa80, NGDS75
<D
BrMc72, SATD73,
SMBM76, WRDM79
SBB80
NSSP80
SATD73
SATD73
SATD73
SATD73
NSSP80
NSSP80
YYS78
TBHH77
FoLa82
O
<D
Sher76
MVS73
MVS73
MVS73
MVS73, Sher76
WRDM79
MVS73
GaWi77
GaWi77
SATD73
GaWi77
SATD73
FHT77
FHT77
GaWi77
NZB78
GaWi77
SATD73
Sher76
Sher76
Sher76
Sher76
Sher76
Sher76
Sher76
BCH75
Tric74
NZB78
I2Ni(Ph3P)2
I2Pt(Et3P)2
l4ln(Pr4N)
I2Pt(Me3P)2 cis
I2Pt(Me3P)2 tran
I4(MO6I*8)
I*4(MO6l8)
¥ lV/fMM
1 MlMM
1 :t
Lil
Agl
PHI
Cul
Nil2
Znl2
In 3ds/2
In
In
In95Sn5
InSb
InP
In2Te3
In2Se3
In2S3
Inl3
Inl
InBr3
InBr3
InBr
InCl3
InCb
InCl
InF3
In2O3
In2O3
In2O3
In(OH)3
(NH4)3InF6
CuInSe2
In(acac)3
Br2InEt4N
Cl2InEt4N
Br4InPr4N
LJnPnjN
CLJnPnjN
InMNN
In
IngsSns
InSb
InP
InP
In2Te3
619.3
619.2
619.6
621.1
621.9
620.6
619.3
517.0
506.8
507.0
507.1
507.3
506.0
443.9
443.8
443.6
444.1
444.6
444.5
444.8
444.8
446.0
443.9
446.0
446.6
445.1
446.0
446.9
444.9
446.4
444.3
444.6
444.9
445.0
445.6
444.7
445.4
445.7
445.2
445.9
445.4
445.8
410.4
410.5
401.6
408.0
411.0
408.9
NZB78
Rigg72
FHT77
CAB71
CAB71
BeWa79
BeWa79
WRDM79
GaWi77
GaWi77
GaWi77
GaWi77
GaWi77
<D
Bert81, Hegd82, WRDM79
PVVA79, LAK77
Hegd82
IMNN79
Bert81, CFRS80
WRDM79
WRDM79
Wagn77, MSC 73
Wagn77, MSC 73
FHT77
Wagn77
MSC73
FHT77
Wagn77
MSC73
MSC73
Wagn75, MSC73
Wagn77, NGDS75, Bert81
CFRS80
LAK77, MSC73
WRDM79
Wagn77
KJID81
MSC73
FHT77
FHT77
FHT77
FHT77
FHT77
WRDM79
PVVA79, KISC80, LAK77
IMNN79
Bert81
KISC80
WRDM79
224
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
In2S3
I11I3
InBr3
InCh
InF3
In2O3
In(OH)3
Ir4f
Ir
Ir
IrCl3
K2IrBr6
K2IrCl6
K2IrCl6
K3IrCl6
Ir(CO)3Cl
KIrClsNO
KIr2(CO)4Cl4
K2Ir2(CO)4Cl5
IrClN2(Ph3P)2
K2p
K
KC1
K
KI
KBr
KC1
KF
KF
KF
KCN
KN3
KNO3
KCIO3
KC1O4
K3PO4
K2Cr04
K2MOO4
KRhOj
KAl2(AlSi3Oi0)2(OH)2
KzIrCle
K2M0CU
408.3
407.3
405.8
404.8
404.6
403.7
406.4
405.0
404.1
60.9
60.8
62.7
62.6
63.0
63.6
62.5
63.7
63.0
63.4
65.0
62.7
63.0
63.6
60.7
63.1
63.2
63.2
294.4
292.9
294.6
292.8
293.0
292.8
292.5
292.8
293.1
294.7
292.5
292.9
293.2
293.4
293.5
292.2
292.6
292.1
292.8
292.6
292.5
293.0
292.8
292.7
293.0
WRDM79
Wagn77
Wagn77
Wagn77
Wagn77
Wagn75
Wagn77
WRDM79
Wagn77
*
WRDM79, BHHK70, EPC75
Folk73
Nefe78K3IrBr661. 8Nefe78
CoHe72, LeBr72
KSPB76, NSBN77
NSBN77
EPC75
EPC75
KSPB76
NSBN77
KSPB76
KSPB76
LeBr72
Folk73
NeBa72
NeBa72
Nefe78
O
O
SMKM77, PeKa77
MVS73
MVS73, WRDM79
MVS73, NSLS77
Wagn75
PMDS77
MVS73
Vann76
SGRS72
NSLS77
MVS73
MVS73
MVS73
MVS73
ACHT73
ACHT73
NSSP80
NFS82
NFS82
WPHK82
NSBN77, LeBr72, CoHe72
CoHe72
CoHe72, LeBr72
K2PtCl6
K2ReCl6
K2ReCl6
K2SnCl6
K2WCl6
K3IrCl6
K4M02CI8
KSbFFfi
KZrFFs • H2O
K2NiF6
K2UF6
K2ZrF6
K3ZrF7
K3Co(CN)6
K3Cr(CN)6
K3Fe(CN)6
K3Mn(CN)6
K4Fe(CN)6
K4V(CN)6
KIrClsNO
K2Pt(CN)4 • 3H2O
K2Pt(CN)4Cl2 • 3H2O
K3Co(SCH2CHNH2COO)3
KLMM
KBr
KF
KSbF6
Kr3d
Kr in graphite
La 3d
La
La
LaH2
La2O3
La2O3
La4d
La
La2O3
LaCrO3
Li Is
LiF
Li
L1N3
LiBr
LiCl
LiF
Li2O
LiOH
Li2CO3
Li3PO4
292.8
292.8
293.7
292.8
293.3
293.0
293.2
293.7
292.7
294.2
293.1
292.6
292.8
293.7
292.2
291.9
291.9
291.9
293.7
293.1
293.3
292.9
292.8
250.7
250.1
249.3
87.0
835.8
835.9
838.8
835.1
833.7
103.9
101.3
101.7
55.6
54.7
55.2
56.8
56.0
55.7
55.6
54.9
55.2
55.4
CoHe72, LeBr72
CoHe72
LeBr72
CoHe72
LeBr72
NSBN77
HUGH79
Wagn77
NKBP73
TRLK73
PMDS77
NKBP73
NKBP73
Vann76
ZeHa71
Vann76
Vann76
Vann76
Vann76
NSBN77
CaLe73
CaLe73
SSEW79
WRDM79
Wagn77
Wagn77
ScSc82
ScSc82
WRDM79
SaRa80
NIS72, KEML74
SaRa80, NGDS75, HoTh80
HoTh80
KLMP73, CSFG79
SGRS72
MVS73
CSFG79, MVS73
MVS73, WRDM79
CSFG79
CSFG79
CSFG79
MVS73
Q> PHYSICAL ELECTRONICS
225

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectrascopy
55.6
MVS73
LiC104
Li2CrO4
LiCiO2
LiNbO3
Lu4f
Lu
Lu4d
Lu
Lu2O3
Mg2p
Mg
Mg
Mg2Cu
Mg3Bi2
MgF2
MgO
Mg(OH)2
MgAl2O4
Talc, Mg3Si4O,O(OH)2
Mg Is
Mg
Mg2Cu
Mg3Bi2
MgF2
Mg(OH)2
MgAl2O4
MgKLL
Mg
Mg2Cu
Mg3Bi2
MgF2
Talc, Mg3Si4O,O(OH)2
Mn 2p
Mn
MnO2
Mn
Mn
MnN
MnS
MnS, beta
MnS, alpha
MnS
Mnl2
MnBr2
MnCl2
MnF2
57.2
57.1
55.6
54.8
7.3
196.2
196.0
49.8
49.6
49.8
50.6
51.0
50.8
49.5
50.4
50.5
1303.1
1303.0
1304.0
1305.0
1302.7
1304.0
1185.5
1185.7
1184.6
1178.2
1180.3
639.0
642.1
638.8
639.0
641.3
640.3
640.8
641.9
642.1
641.9
642.0
642.0
642.6
MVS73
ACHT73
ACHT73
StHo79
KEML74, LPWF75
SaRa80, NGDS75
HAS75, LMKJ75, HFV 77,
Fugg77, WRDM79
FWFA75
FWFA75
Wagn80
InYa81
HNUW78a
HNUW78b
WPHK82
HAS75, LMKJ75, Fugg77
FWFA75
FWFA75
Wagn80
HNUW78a
HNUW78b
LMKJ75, SRHH78, WRDM79
Fugg77, HFV 77
FWFA75
FWFA75
Wagn80
WPHK82
<D
LANM81
WRDM79
CSC72
CSC72
Aoki76
Aoki76
Limo81
Aoki76, CSC72
Aoki76, CSC72
Aoki76, CSC72
Aoki76, CSC72
MnF3
MnO
MnO
MnO
Mn2O3, alpha
Mn2O3
Mn2O3, alpha
Mn2O3, gamma
Mn3O4
MnO2
MnO2, beta
MnO2
MnOOH
CoMn2O4
CuMn2O4
MnCr2O4
MnSO4
KMnO4
Mn2(CO)io
BrMn(CO)5
(BrMn(CO)4)2
BrMn(CO)4(Ph3P)
BrMn(CO)3(P(OMe)3)2
Mn2(CO)8(Ph3P)2
K3Mn(CN)6
Na4Mn(CN)6
Mn(C5H5)2
Mn(CO)3(C5H5)
Mn(CO)3(C5H5)
MnLMM
Mn
Mo 3d
Mo
Mo
Mo
MoB2
Mo2B5
Mo2C
MoSi2
MoSe2
MoS2
MoS2
MoCl3
MoCl4
M0CI5
MoO2
MoO3
MoO3
(NH)42MoO4
Al2(MoO4)3
Al2(MoO4)3
642.6
640.7
640.5
641.4
641.2
641.6
641.7
641.5
641.4
642.4
641.1
642.3
641.7
641.5
641.0
640.6
644.9
647.0
641.6
641.9
641.7
641.5
641.0
640.7
639.7
638.3
638.5
640.6
641.8
617.6
228.0
227.9
228.0
227.9
227.3
227.8
227.7
228.3
229.0
229.6
230.0
230.6
231.0
229.3
232.6
232.6
232.1
232.5
233.3
CSC72
OHI75
OkHi76
Aoki76, CSC72
OHI75
CSC72
OkHi76
OkHi76
OHI75
WRDM79
OHI75
Aoki76, CSC72, NGDS75
OHI75
OkHi76
OkHi76
OkHi76
Limo81
UmRe78
VWVB77
VWVB77
VWVB77
VWVB77
VWVB77
VWVB77
Vann76
Vann76
BCDH73, CDH74
CDH74
ClAd71
Vayr81
NyMa80
CiDe75, WRDM79, CGR 78,
GrMa75, KBAW74, WaTa80
MECC73
BrWh78
BrWh78
WPHK82
GrMa75
PCLH76, GrMa75
SSOT81,StEd75
GrMa75
GrMa75
GrMa75, SwHe71
SaRa80, CGR78,
CiDe75, KBAW74
GPDG79, KBAW74, SaRa80,
CiDe75, CGR78, GrMa75
WRDM79
SwHe71
PCLH76
NFS82
226
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
Nls
CaMoO4
CoMoO4
CrMoO4
CuMoO4
K2MOO4
Na2MoO4
Na2MoO4 • 2H2O
(NH4)2Mo2O7
(NH4)2Mo7O24 • 4H2O
Cu2Mo30io
G13MQ2O9
Rh2MoO6
Cl2Mo(NO)2
K4Mo2Cl8
I4(MO6I«)
Br4(Mo6Br8)
CUMo(Ph3P)2
CUMo2(Et3P)4
Cl3Mo(PhPMe2)3 mer
CUMo2(PhPMe2)4
(CO)sMo(Ph3P)
(C0)4Mo(Ph3P)2
(CO)5Mo(Ph3P)3
Cl2Mo(CO)2(Ph3P)2
Cl2Mo(CO)3(Ph3P)2
Cl2Mo(NO)2(Ph3P)2
Cl3Mo(NO)2(MeCN)2
Cl3Mo(pyridyl)3
Cl4Mo2(pyridyl)4
CUMo(pyridyl)2
Br4(Mo6Br8)(pyridyl)2
Cli2Mo6(pyridyl)
CL,Mo(bipyridyl)
Cl3MoO(bipyridyl)
Cl2MoO2(bipyridyl)
(CO^oCbipyridyl)
Cli^OeCPh^z
Cl6(Mo6Brg)(Et4N)2
Br6(Mo6Br8)(Et4N)2
(Bu3N)2Mo(CO)4
(Bu4N)2Mo4In
(Bu4N)3Mo2Cl9
(C5H5)Mo(CO)3
Mo02(acac)2
!
BN
NH3
NH3
Cr2N
CrN
GaN
GejN4
ScN
TiN
232.8
232.4
232.2
232.7
232.1
232.1
232.5
232.5
232.7
232.4
232.8
231.8
230.4
229.2
228.8
229.3
231.9
228.7
229.4
228.7
228.3
227.8
227.4
229.3
228.8
230.3
231.5
229.5
228.9
230.8
229.7
229.6
232.0
231.9
232.3
226.3
229.6
229.2
229.3
227.4
229.0
229.5
227.4
232.0
398.1
399.6
398.7
397.4
396.7
397.0
397.4
396.2
396.9
NFS82
GPDG79,CiDe75,AMFL74
TVG76
HMUZ78
NFS82
CiDe75,NFS82,SwHe71,
NSLS77
GrMa75
AMFL74
GrMa75
HMUZ78
HMUZ78
NFS82
Nefe78
HUGH79
BeWa79
BeWa79
HuBa74
Walt77
LeBr72
Walt77
HVV79
HuBa74
HuBa74
Nefe78
HuBa74
HuBa74
Nefe78
CELC76
Walt77
SwHe71
BeWa79
HaWa74
CELC76
CELC76
CELC76
GrMa75
HaWa74
BeWa79
BeWa79
GrMa75
BeWa79
Walt77
GrMa75
GrMa75
<t>
HHJ69
LaLu79, RNS73
RoRo76
STAB76
HeMa80
TLR78
STAB76
VN
DM
BN
Si3N4
S2N2
SP(NH3)3
O4lM3L,l
(NPC12)3
Cs(N*NN*)
Cs(NN*N)
K(N*NN*)
K(NN*N)
Li(N*NN*)
Li(NN*N)
Na(N*NN*)
Na(N*NN*)
Na(NN*N)
Na(NN*N)
Rb(N*NN*)
Rb(NN*N)
K3Co(CN)6
K3Cr(CN)6
K3Fe(CN)6
K3Mn(CN)6
K4Fe(CN)6
K4Fe(CN)6
K4V(CN)6
Na4Mn(CN)6
Na2Fe(CN)3(N*O)
Na2Fe(CN*)3(NO)
Na4Fe(CN)5N*O2
Na4Fe(CN*)5NO2
KCN
KCN
KCN
NaCN
(NH4)2PtCU
(NH4)2SO4
N*H4NO3
N*H4NO3
N*H4NO3
N2H6SO4
N2H6SO4
NH3OHC1, ionic
NH3OHCI, ionic
NH3SO3
NaN2O2
KSCN
KOCN
KOCN
NF4BF4
NaNO2
NaNO2
Ba(NO3)2
Ca(NO3)2
KNO3
NH4N*O3
397.4
398.1
397.4
398.9
398.8
400.4
400.3
397.9
402.2
398.5
402.8
398.7
403.1
398.5
400.1
402.9
404.5
398.1
402.4
399.6
397.6
398.1
398.3
398.0
397.8
398.5
397.6
402.7
397.4
404.3
396.6
399.8
398.3
400.6
400.2
400.3
401.3
401.9
402.3
403.1
403.3
401.7
402.9
401.4
402.6
402.1
399.3
399.1
397.9
417.1
404.9
403.9
407.5
408.0
407.2
407.3
STAB76
WRDM79, HJGN70
TLR78
SDIO77
FlWe75
HHJ69
HHJ69
SGRS72
SGRS72
SGRS72
SGRS72
SGRS72
SGRS72
SGRS72
HHJ69
SGRS72
HHJ69
SGRS72
SGRS72
Vann76
Vann76, ZeHa71
Vann76
Vann76
Vann76
YNNA77
Vann76
Vann76
YNNA77
YNNA77
YNNA77
YNNA77
HHJ69
YNNA74
Vann76
Vann76
KaE179
SwA174
SwA174, BCM78
BTE77
HHJ69
HHJ69
Folk73
HHJ69
Folk73
HHJ69
HHJ69
HHJ69
HHJ69
Folk73
RNS73
HHJ69, LiHe75
BTE77
CLSW83
CLSW83
NSLS77
BTE77
STAB76
$ PHYSICAL ELECTRONICS
227

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
NH4N*O3
NH4N*O3
NaNO3
NaNO3
Ni(NO3)2
Ni(NO3)2 • 6H2O
Pb(NO3)2
Sr(NO3)2
K2Pt(NO2)4
K2Pt(NO2)6
K3Co(NO2)6
K3Rh(NO2)6
K3Rh(NO3)6
MoCl2(NO)2
K2Os(NO)Cl5
K2Ru(NO)I5
K2Ru(NO)Br5
Rh3(NO)6Cl3
Co(CO)3NO
Fe(CO)2(NO)2
Co(NH3)5Cl3
Ni(NH3)6Br2
Ni(NH3)6(C104)2
Pt(N*H3)2(NO2)2
Pt(NH3)2(N*O2)2
Pt(NH3)2Cl2
Rh(NH3)6Cl3
Me4NBr
Me4NCl
Me4NCl
EUNC1
Et3NHCl
Et3NHHSO4
Bu;iN
BuNH3HSO4
Bu4NHSO4
EtNH2
EtNH2BF3
NH4CI
Nmci
NH3BF3
C5H5N
C5H5N
C5H5NHCI
C5H5NBF3
Hexamethylenetetramn
PhCN
C(NH2)3C1
PhNH2
Me3NO
OP(NMe3)3
P(NMe2)3
Cysteine HC1 Hydrate
Cysteine
H3N(CH2)3COOH ionic
HN(CH2COOH)3 ionic
408.0
405.8
408.1
407.4
407.0
407.6
407.2
408.1
404.7
404.7
404.2
404.1
407.3
401.4
402.8
402.5
403.30
401.90
402.20
401.80
400.10
399.60
399.90
400.40
404.40
400.20
400.10
401.40
401.50
402.30
401.40
401.20
401.80
398.90
401.00
402.20
398.90
401.40
400.80
401.50
401.90
398.80
399.30
401.00
401.40
399.40
399.20
400.10
399.40
403.00
399.10
398.30
401.20
400.00
400.80
400.70
HHJ69
BCM78
HHJ69, LiHe75
BTE77
TRLK73
NZB78
TLR78
CLSW83
SNMK78
SNMK78
NBMO73
SNMK78
SNMK78
Nefe78
Nefe78
Nefe78
Nefe78
Nefe78
BCGH72
BCGH72
YNAB77
NZB78
NZB78
Nefe78, CMHL77
Nefe78, CMHL77
Nefe78, CMHL77
Nefe78
SGCT74
EMGK74
LiHe75
EMGK74
LiHe75
EvRe81
LiHe75
EvRe81
EvRe81
BCGH73
BCGH73
SwA174
EMGK74, BTE 77
BCGH73
LiHe75
BCGH73
HHJ69
BCGH73
LiHe75
LiHe75
LeRa77
LiHe75
LiHe75
FlWe75
GBMP79
SSEW79
LlMa79
YoSa74
YoSa74
N(CH2COOH)3
H2NCH2COOH
H3NCH2COO ionic
EtCHNH2COOH
H2N(CH2)3COOH
CH3CHNH2COOH
H2NCONH2
H2NCSNH2
H2NCSNH2
CH3CONH2
PhCONH2
PhN=NPh
PhN=NPh
PhCH=NPh
1, l'-azonaphthalene
NCN=C(N*H2)2
AmONO
PhC=NOHC=NOHPh
MeC=NOHC=NOHMe
Ni(dimethylglyoxime)2
Cu Salicylaldoxime
Cu(8-hydroxyquinol)2
8-Quinolinol
Cr(CO)5NH3
N(EtO)3SiCl
N(EtO)3SiH
Morphine
Morphine H2SO4
Nals
Na
NaCl
Na
Na
Nal
NaBr
NaBr
NaCl
NaCl
NaCl
NaCl
NaCl
NaF
NaF
Na2CO3
Na2CO3
Na2HPO4
Na2HPO4
Na2S2O3
Na2SO3
Na2SO4
Na2Se03
Na2Te04
Na3PO4
398.70
398.70
400.60
400.60
398.80
401.00
399.50
399.80
399.20
399.60
399.50
399.60
400.10
399.10
400.00
399.20
404.5
400.6
399.8
400.4
400.3
399.5
398.9
399.5
400.5
399.8
398.5
401.2
1071.8
1072.1
1071.8
1071.4
1071.7
1071.7
1071.4
1071.6
1072.5
1071.5
1071.8
1072.3
1071.2
1071.0
1071.5
1071.7
1071.6
1071.5
1071.6
1071.3
1071.2
1070.8
1071.1
1071.1
1070.8
1071.6
YoSa74
YoSa74
YoSa74
YNAB77
YoSa74
YNAB77, KNPP74
LeRa77
SrWa77, NBMO73
LeRa77
SNMK78
LBNN78, HHJ 69
BrFe76
LiHe75
SZNS77
Yosh80
LeRa77
LiHe75
Yosh78
Yosh78
NZB78
BuBu74
YoSa74
Yosh80
BCGH72
GrHe77
GrHe77
SCKK75
SCKK75
BaSt75
KLMP73
WRDM79
Wagn75
MVS73
Wagn75
SGSO70
KOK83
NSLS77
HHDD81
Wagn75
MVS73, NSLS77
WRDM79
HHDD81
WRDM79
Swif82
Wagn75
Wagn75
Wagn75
Wagn75
Wagn75
MVS73, Swif82, GMD79
MVS73
GMD79
228
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
NaC104
NaH2PO2
NaH2PO4
NaHCO3
NaN3
NaNO2
NaNO3
NaPO3
NaPO3
Na2Cr207
Na2CiO4
Na2CiO4
Na2lrCl6
Na2MoO4
Na2MoO4
Na2PdCU
Na2Sn03 • 3H2O
Na2WO4
NaAsO2
NaBiO3
NaCrO2
Na2BeF4
Na2GeF6
Na2SiF6
Na2SiF6
Na2TaF7
Na2TiF6
Na2ZrF6
NajAlF6
Na3TaF8
NaBF4
NaBeF3
NaTaF6
Na2O
NaOOCH
Na2C2O4
NaAlSi3O8, albite
Hydroxysodalite
Natrolite
Mol Sieve A
Mol Sieve X
Mol Sieve Y
NaOAc
NaOAc
NaOOCCH2SH
NaO3SPh
P-(NaOCOCMe=CH2)
NaKLL
Na
Na
Na
Nal
NaBr
NaCl
NaCl
1071.8
1071.1
1072.0
1071.3
1070.8
1071.6
1071.4
1071.7
1071.7
1071.6
1071.4
1071.0
1071.9
1070.9
1071.8
1071.8
1071.1
1072.0
1070.9
1071.3
1072.4
1071.8
1071.7
1071.7
1072.1
1071.9
1071.6
1071.5
1071.8
1071.8
1072.7
1071.9
1071.7
1072.5
1071.1
1070.8
1072.2
1070.5
1072.4
1071.8
1072.3
1072.6
1071.1
1071.7
1071.2
1071.3
1072.2
994.3
994.3
994.5
991.2
990.6
990.3
990.0
MVS73
Swif82
Swif82
WRDM79
SGRS72
Wagn75
Wagn75
Wagn75
Swif82, GMD 79
WRDM79
Wagn75
ACHT73
Wagn75
Wagn75
NSLS77
Wagn75
WRDM79
Wagn75
Wagn75
WRDM79
ACHT73
NKBP73
Wagn75
Wagn75
NSLS77
NKBP73
Wagn75
Wagn75
Wagn75
NKBP73
Wagn75
NKBP73
NKBP73
BaSt75
WRDM79
WRDM79
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
Wagn75
HHDD81
WRDM79
WRDM79
HHDD81
BaSt75
KLMP73
SRHH78
WRDM79
Wagn75
Wagn75
SGSO70
NaCl
NaF
Na2CO3
Na2HPO4
Na2HPO4
Na2S2O3
Na2SO3
Na2SO4
Na2Se03
Na2Te04
Na3PO4
NaH2PO2
NaH2PO4
NaHCO3
NaNO2
NaNO3
NaPO3
NaPO3
Na2Cr207
Na2Cr04
Na2lrCl6
Na2MoO4
Na2PdCL»
Na2Sn03 • 3H2O
Na2WO4
NaAsO2
NaBiO3
Na2GeF6
Na2SiF6
Na2TiF6
Na2ZrF6
Na3AlF6
NaBF4
Na2O
NaOOCH
Na2C2O4
Mol Sieve A
Mol Sieve X
Mol Sieve Y
NaOAc
NaOOCCH2SH
NaO3SPh
Nb3d
Nb
Nb
Nb
Nb3Te4
NbTe4
Nb3Se4
NbSe2
NbN
NbBr5
NbCls
990.1
998.6
989.8
989.9
989.7
990.1
990.4
989.8
991.0
990.5
990.1
989.8
989.1
989.8
989.8
989.6
989.3
989.4
990.6
991.2
989.2
991.0
990.2
990.3
989.6
990.7
990.9
998.1
987.7
988.5
988.7
988.0
987.1
989.8
989.8
990.5
988.8
988.4
987.8
989.9
990.4
989.7
202.4
202.3
202.2
201.8
202.8
203.8
203.0
203.4
207.7
203.8
207.1
208.0
KOK83
Wagn75
WRDM79
WRDM79
Swif82
Wagn75
Wagn75
Wagn75
Wagn75
Wagn75
Swif82
Swif82
Swif82
WRDM79
Wagn75
Wagn75
Wagn75
Swif82
WRDM79
Wagn75
Wagn75
Wagn75
Wagn75
WRDM79
Wagn75
Wagn75
WRDM79
Wagn75
Wagn75
Wagn75
Wagn75
Wagn75
Wagn75
BaSt75
WRDM79
WRDM79
WPHK82
WPHK82
WPHK82
Wagn75
WRDM79
WRDM79
<I>
NyMa80
MSC73, NSCP74, WRDM79
Bahl75
Bahl75
Bahl75
Bahl75
Bahl75
MSC73
Bahl75
MSC73
MSC73
$ PHYSICAL ELECTRONICS
229

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
NbO
NbO
NbO
Nb2O5
LiNbO3
KNbO3
CaNb2O6
CdNb2O6
Ca2Nb2O7
RhNbO4
Cl2Nb6Cli2(H2O)4 • 4H2O
Cl6(Nb6Cl12)(Et4N)3
Br6(Nb6Cli2)(Bu4N)2
Cl2(Nb6ClI2)(Pr3P)4
Cl2(Nb6Cl12)(Me2SO)4
Nd3d
Nd
Nd2O3
Nd4d
Nd2O3
Nels
Ne in graphite
Ne in Ag
Ne in Au
Ne in Cu
Ne in Fe
NeKLL
Ne in Fe
Ni2p
Ni
NiO
Ni
Ni
Ni
Ni
Ni5Yb
Ni2Si
NiSi
NiS
NiS
NiS
Nil2 • 6H2O
NiCl2
NiF2 ■ 4H2O
NiO
NiO
NiO
Ni2O3
202.8
203.7
204.7
207.5
207.1
206.5
206.8
207.0
206.7
206.5
204.7
204.7
204.7
204.6
204.6
980.8
982.0
120.8
863.1
862.4
861.6
862.2
863.4
818.0
852.7
853.8
852.7
852.7
852.8
852.7
852.7
853.0
853.5
852.8
853.2
855.1
855.3
856.7
857.5
853.5
854.3
854.3
857.3
SPB76
Bahl75
FCFG77
SPB76, MSC73, FCFG77,
NFS82, NGDS75
StHo79
MSC73
Bahl75
Bahl75
Bahl75
NFS82
BeWa79
BeWa79
BeWa79
BeWa79
BeWa79
<D
SaRa80
SaRa80
CiHa74
CiHa74
CiHa74
Wagn75
Wagn75
LANM81
ALMP82
PEJ82
WRDM79, ShRe79
WWC78
GGM82
GGM82
ShRe79
DPS77
NgHe76
NZB78
TRLK73, KlHe83, YYS78
NSLS77
WRDM79
DPS77, KlHe83, LFWS79,
NFS82, NZB78, SRD79
KiWi74, McCo75
NgHe76
Ni2O3
Ni(OH)2
Ni(NO3)2
Ni(NO3)2 ♦ 6H2O
NiAl2O4
NiAl2O4
Ni2Si04
NiClO4 • 6H2O
NiFe2O4
NiRh2O4
NiSO4
NiSiO3
NiWO4
NaNiIO6 • H2O
K2NiF6
Ni(CO)4
Br2Ni(NH3)6
Ni(NH3)6(C104)2
Ni(acac)2
Ni(OAc)2 • 4H2O
Ni(C5H5)
Ni(C5H5)
Cl2Ni(Ph3P)2
Cl2Ni(Ph3P)2
Cl2Ni(Ph3P)2
Ni(dimethylglyoxim)2
Cl2Ni(bipyridyl)
Ni(SPh)2
Cl2Ni(NH2CONHCONH2)2
Ni(2-aminobenzoate)2
Ni(P(OEt)3)4
Cl2Ni(Et3P)2
Br4Ni(Et4N)2
NiLMM
Ni
Ni
Ni
Ols
A12O3, sapphire
Ag2O
AgO
A12O3
A12O, sapphire
A12O3, alpha
A12O3, gamma
As2O3
As2O5
B2O3
BaO
BeO
Bi2O3
CaO
855.8
855.6
857.1
856.9
855.8
857.4
856.1
857.2
855.4
855.9
856.8
856.5
857.7
856.4
861.0
854.8
855.9
856.5
855.9
856.5
854.2
856.8
855.0
854.4
857.0
855.0
855.7
854.6
856.7
855.9
853.8
854.7
855.2
846.1
846.2
846.1
531.0
529.2
528.6
531.3
531.0
531.8
530.9
531.7
531.6
533.0
528.3
531.7
530.0
529.4
KiWi74
DPS77, LFWS79, McCo75
TRLK73
NZB78
SDR 80, LFWS79
NgHe76
LFWS79
NZB78
McCo75
NFS82
ShRe79
SRD79
NgHe76
NZB78
TRLK73
BCGH72
NZB78
NZB78
NZB78, TRLK73
NZB78
BCDH73
ClAd71,TRLK73
BNSA70
NZB78
STHU76
NZB78,YoYa81
NSWU77, NZB78
BBFR77
YYS78
YoYa81
TRLK73
FaBa79
EMGK74
PEJ82
WRDM79
KiWi74, KGW76
<D
Scho73
Scho73, SRD80
Nefe82, SDR80,
BGD75, ZSOS79
Tayl82, WPHK82
WPHK82
Barr83, WPHK82
Tayl82, MINN78
WZR80
NGDS75
InYa81
NGDS75, NFS75, HJGN70
NGDS75, DSBG82
InYa81
230
PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
CaO
CdO
CdO2
Ce2O3
CcOj
CO2O3
CO3O4
CO3O4
CO3O4
CoO
Cr2O3
Cr2O}
CKh
C1O3
CsO2
CsA
Cu2O
CuO
Fe2O3
Fe2O3, alpha
Fe2O3, gamma
FeO
GeO2
H20
HfO2
I2O5
In2O3
In2O3
In2O3
La2O3
Li2O
Lu2O3
MgO
MgO
MgO
MnO
Mn3O4
Mn2O3
MnO2
MnO2
MoO2
MoO2
MoO2
M0O3
MoO3
M0O3
Na2O
Nb2O5
beta
531.3
529.2
530.3
530.3
529.2
529.9
530.2
529.6
529.7
530.1
531.0
531.5
529.3
530.2
527.5
530.5
530.3
529.6
530.2
529.6
529.6
529.8
530.0
529.8
530.8
520.0
533.2
530.4
529.9
529.8
530.3
530.5
528.6
531.3
529.5
530.0
531.2
532.1
529.7
529.6
529.6
530.0
529.6
531.1
530.7
529.9
530.9
531.6
530.4
529.7
529.6
WZR80
NFS75, NGDS75, SBB80
HGW75
PKHL80
NGDS75
McCo75
NGDS75, WZR80
BGD75
CBR76, GPDG79, HSU76
BGD75, NFS82, NGDS75
HoTh80, DPS76,
WZR80, BDFP81
NGDS75
IIKK76
DPS76
YaBa80
YaBa80
HMUZ78, MSSS81, RBO72, Scho73b
MSSS81, McCo75, HMUZ78,
RBO72, Scho73b
NGDS75, WZR80,
Kilk73, Limo81
HSU76, NSLS77
McZe77
McZe77
McZe77
McZe77
NGDS75, Scho73a,
WZR80, ZSOS79
NGDS75, WZR80
NGDS75, WZR80
NGDS75
Sher76
NGDS75
CFRS80
LAK77
NGDS75
CSFG79
NGDS75
NFS82, NGDS75
InYa81
WZR80
OHI75
OHI75
OHI75
NGDS75, WZR80
OHI75
PCLH76
CGR78, KBAW74
SaRa80
NGDS75, NFS82
PCLH76
SaRa80, KBAW74,
HMUZ78, CGR78
BaSt75
GBP81
Nb2O5
Nb2O5
NbO2
Nd2O3
Ni2O3
NiO
P2O5 (bridging O)
P2O5 (bridging O)
P2O5 (nonbridging O)
P2O5 (nonbridging O)
PbO
PbO
PbO, rhombic
PbO, rhombic
PbO, tetragonal
PbO, tetragonal
PbO2
PbO2
PdO
Pr2O3
PrO2
PtO2
ReO2
ReO3
Rh2O3
RuO2
RuO2
RuO3
Sb2O3
Sc2O3
SiO2
SiO2
SiO2
SiO2, gel
SiO2, Vycor
SiO2, alpha Cristobal
SiO2, alpha quartz
SiO2, alpha quartz
SnO
SnO2
SrO
Tb2O3
TbO2
TeO2
ThO2
TiO2
UO2
UO3
V2O3
V2O4
V2O5
V2O5
WO2
530.6 NGDS75, NFS82
531.3 SaRa80
530.7 SaRa80
530.6 SaRa80
531.8 KiWi74, NgHe76
529.6 DPS77, LFWS79, NFS82,
NGDS75, SRD79, WZR80
532.2 NGDS75
532.6 GMD79
533.6 NGDS75
534.3 GMD79
528.9 NFS82
531.6 WZR80
529.4 KOW73
530.9 ZiHe78
527.5 KOW73
528.9 ZiHe78
527.4 KOW73
529.0 TLR78
529.3 KGW74
529.3 SaRa80
528.6 SaRa80
531.4 CMHL77
530.1 BHU81
531.9 BHU81
530.4 CMHL77, NFS82
529.4 MWLF78
529.4 KiWi74, McGi82, SaRa80
530.7 KiWi74
530.0 WZR80
530.0 NGDS75, WZR80
533.0 Ban-83, KMH78, NGDS75
534.3 KiDc73
532.5 NSLS77, SRD79
532.8 WPHK82
532.9 WPHK82
532.5 WPHK82
532.7 WPHK82
533.2 TLR78
530.1 ADPS77
530.6 ADPS77, LAK77, MWLF78,
NGDS75, TLR78
530.5 VaVe80
528.8 SaRa80
528.8 SaRa80
530.2 GBP81.SBB8O
530.0 NGDS75
529.9 MWLF78, WZR80, NGDS75
530.4 MSSS81
529.9 MSSS81
530.5 CGR78
530.0 KKL83
529.9 BCM78, KKL83
530.5 NSLS77, NGDS75, NFS82
530.4 CoRa76
• PHYSICAL ELECTRONICS
231

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
wo3
ZnO
Z1O2
ZrO2
A1(OH)3, bayerite
A1(OH)3, gibbsite
A1OOH, boehmite
Co(OH)2
Cr(OH)3
Cu(OH)2
Fe(OH)2
FeO*OH
FeOO*H
In(OH)3
KOH
LiOH
Mg(OH)2
NaOH
Ni(OH)2
AIPO4
CS3PO4
CS4P2O7
K3PO4
K4P2O7
Li3PO4
Li4P2O7
Na3PO4
Na4P2O7 (bridging O)
Na4P2O7 (nonbridging 0)
NaPO3 (bridging 0)
NaPO3 (nonbridging 0)
Ba(NO3)2
Ca(NO3)2
KNO3
Pb(NO3)2
BaSO4
BaSO4
CaSO4
Cr2(SO4)3
FeSO4
K2SO4
NiSO4
PbSO4
ZnSO4
Na2SO3
Na2S2O3
PbSO3
PbS2O3
Ag2CO3
BaCO3
CaCO3
CdCO3
CuCO3
Li2CO3
530.6
530.4
530.2
530.9
531.4
531.5
531.5
531.2
531.2
531.2
531.3
530.1
531.2
531.8
531.8
531.2
530.9
532.8
531.3
532.8
530.1
530.2
530.4
530.1
531.5
531.7
530.4
531.1
532.9
531.5
533.4
533.0
533.6
532.7
532.7
531.8
532.5
532.0
532.1
532.4
531.2
532.1
531.5
532.5
531.2
531.8
530.8
531.1
530.6
531.3
531.4
531.4
531.5
531.5
CoRa76, KMH78, NFS82,
NGDS75, NSLS77
NFS82, NGDS75, NSLS77,
Scho73, WZR80, ZSOS79
NGDS75
WZR80
WPHK82
WPHK80
Tayl82
HSU76
DPS76
MSSS81
HSU76
McZe77
McZe77
WZR80
KiDc73
CSFG79, WZR80
HNUW78
BaSt75
LFWS79
CFRS80
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73, GMD79
GMD79
GMD79
GMD79
GMD79
CLSW83
CLSW83
NSLS77
TLR78
CLSW83
WZR80
CLSW83, WZR80
DPS76
Limo81
WZR80
NSLS77, Nefe82
ZiHe78
Nefe82
WZR80
WZR80
ZiHe78
ZiHe78
HGW75
CLSW83
CLSW83, WZR80
HGW75
WZR80
CSFG79
Na2CO3
PbCO3
CsClO4
KC1O4
KCIO3
LiClO4
NaClO4
RbClO4
Al2SiO5, kyanite
AI2S1O5, mullite
AI2S1O5, sillimanite
AI2S1O5, sillimanite
Ca3(HSiO4)2
Co2SiO4
Na2SiO*3 • 5H2O
Na2SiO3 • 5H2O*
Ni2Si04
NiSiO3
MgSiO*3 ■ 2H2O
MgSiO3 • 2H2O*
Al2(MoO4)3
A12(WO4)3
CaCtO4
CaMoO4
CaWO4
p-Benzoquinone
Hydroquinone
PhCOONa
p(Me2Si(O))
Methylsilicone Resin
Phenylsilicone Resin
PhCONH2
Os4f
Os
Os
Os
OsCl3
OsO2
OsO2
Os(HSO3)2
K2OsI6
K2OsBr6
K2OsCl6
K2OsCl6
K2OsCl6
K2OsCl6
K2OsO2(OH)4
Os(NH3)5N2I2
Os(NH3)5N2Br2
Os(NH3)4(N2)2Br2
Os(NH3)5N2Cl2
K2Os(NO)Br5
K2Os(NO)Cl5
HOs(Ph3P)Cl(CO)
OsCU(Et3P)2
531.6
531.2
532.7
532.2
532.3
533.4
533.0
532.8
531.3
531.6
531.3
531.9
531.2
531.6
530.6
532.5
531.9
532.3
532.0
532.8
531.0
532.0
529.5
530.6
529.9
532.2
533.5
531.4
532.5
532.7
532.6
532.2
50.7
50.6
50.2
53.1
52.0
52.7
52.2
51.9
52.9
53.0
53.2
53.5
53.9
55.2
50.9
52.0
51.6
52.2
53.3
53.4
51.1
52.6
HHDD81, WZR80
WZR80
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73
AnSw74
AnSw74
AnSw74
WPHK82
ClRi76
WZR80
ClRi76
ClRi76
LFWS79
SRD79
C1RJ76
ClRi76
PCLH76
NgHe76
ACHT73
NFS82
NFS82
OYK74
OYK74
LBNN78
WPHK82
WPHK82
WPHK82
LBNN78
O
Folk73, BNMN79
BHHK70
Nefe78
SaRa80
Folk73
Nefe78
Nefe78
Nefe78
Folk73
CoHe72
LeBr72
Nefe78
Nefe78
Folk73
Folk73
Folk73
Folk73
Nefe78
Nefe78
Nefe78
LeBr72
232
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
P2p
OsCU(PhPMe2>2 trans
OsCl3(PhPMe2)3 mer
OsCl2(PhPMe2)4 trans
»
P
P
P(red)
C113P
G1P2
GaP
GaP, anodically oxid.
GaP, thermally oxid.
InP
InP
Zn3P2
ZnP2
AIPO4
CS3PO4
K2HPO4
K3PO4
Li3PO4
Na2HPO4
Na3PO4
NaH2PO4
NaPO3
Rb3PO4
NaH2PO2
CS4P2O7
K4P2O7
LUP2O7
Na+P^
Rb4P2O7
P4O10
OPC13
SPC13
SP(NH3)3
Ph3P
Ph3P
PhjP
PhjPS
Ph^Se
Ph3PO
Ph3PBI3
Ph3PBBr3
PhsPBCl,
Ph3PBF3
Ph2PSH
PhiPSeH
(PhS)3P
(PhS)3PS
(PhO)3p
53.0
51.7
50.5
129.9
130.0
130.0
129.6
129.7
128.8
128.5
129.7
128.3
129.4
128.3
129.8
132.9
132.1
132.8
133.2
133.6
133.1
132.4
134.2
134.2
132.5
132.6
132.6
132.6
134.3
133.2
133.1
135.3
135.7
135.3
133.4
130.9
130.9
130.9
132.5
132.6
132.5
132.2
132.1
132.2
132.0
132.3
132.3
134.3
133.1
134.7
LeBr72
LeBr72
LeBr72
NSDU75
ScBr81
NSDU75
NSDU75
WaTa80, IMNN79, NIMN78
MIN81
MIN81
CFRS80
Bert81
NSDU75
NSDU75
CFRS80
MVS73
Bert81
MVS73
MVS73
Swif82, WRDM79, WaTa80
MVS73, GMD79, Swif82
Swif82
Swif82,GMD79
MVS73
Swif82
MVS73
MVS73
MVS73
MVS73, GMD79, Bert81
MVS73
NIMN78, NGDS75, CFRS80,
Bert81,GMD79
FlWe75
FlWe75
FlWe75
Dale76, NSMS79,
TRLK73, GBMP79
HVV79, LMF80, SRH72
MSAV71,GZF73
HVV79, STA74,
FlWe75,MSAV71
HVV79, MSAV71
GZF73, STA74, FlWe75,
MSAV71.HW79.BNSA70
HVV79
HVV79
HVV79
HVV79
NSWM80
NSWM80
MSAV71
MSAV71
MSAV71
(PhO)3PS
(PhO)3PSe
(PhO)3PO
(PhO)3PO
Ph3POBBr3
Ph3POBCl3
Ph3POBF3
Ph2PO(OH)
OPCl(OEt)2
OPF2NPh2
OPCl2OEt
OP(NMe3)3
Ph4PI
Ph4PBr
Ph4PCl
MePPh3Br
(Ph3P)3P*F6
(Ph3P*)3PF6
Pt(Ph3P)4
Ph3P=CHCOPh
Ph3P=CHCOOMe
Cl2Ni(Ph3P)2
Ni(CO)2(Ph3P)2
Pb4f
Pb
Pb
Pb
Pb
Pb
Pb98Sn2
PbTe
PbSe
PbS
Pbl2
PbBr2
PbF2
PbO
PbO
Pb3O4
PbO2
Pb(OH)2
Pb(NO3)2
PbSO3
PbSO4
PbS2O3
PbRh2O4
PluPb
Ph3PbCl
Ph2PbCl2
Pb(OAc)2
Pb(OAc)4
134.7
134.3
133.6
134.8
133.7
133.4
133.3
133.3
134.8
135.8
135.2
133.4
133.0
133.5
132.8
133.0
136.7
133.5
131.2
132.2
132.5
132.4
131.4
136.9
136.4
136.8
136.8
136.8
136.8
137.4
137.4
137.6
138.7
138.8
139.0
138.9
138.9
138.0
137.4
138.4
139.3
138.6
139.4
138.4
137.3
138.2
138.9
139.4
138.5
137.2
MSAV71
MSAV71
CFRS80
FlWe75
HVV79
HVV79
HVV79
MSAV71
FlWe75
FlWe75
FlWe75
FlWe75
HVV79
LMF80, SRH72
HVV79
SRH2
LMF80
LMF80
Rigg72
Dale76, STA74
STA74
BNSA70
TRLK73
O
LKMP73
SFS77
BeF180, KOW73, KiWi73,
TLR78, WRDM79, WaTa80
HSBS81, OCH79
HSBS81
SFS77
SFS77
MoVa73, SFS77, ZiHe78
MoVa73
NeFe82
MoVa73
KOW73, ZiHe78, WRDM79
NFS82, NSSP80, MoVa73
MoVa73, BeF180
MoVa73
BeF180, KOW73,
TLR78, MoVa73
NSSP80
BeF180, TLR78, NSSP80
ZiHe78
NSSP80, ZiHe78
ZiHe78
NFS82
MoVa73
MoVa73
MoVa73
BeF180
BeF180
$ PHYSICAL ELECTRONICS
233

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
Pd3d
Pd
Pd
Pd
Pd
Pd
Pd
Pd
Ag3OPd5O
Ag8OPd2O
Ag9OPdiO
Al8OPd2O
Mg75Pd25
Pd2Si
Pd3Si
Pdl2
PdBr2
PdCl2
PdO
PdO2
Na2PdCU
K2PdCU
K2PdBr4
K2Pd(NO2)4
K2PdCl6
Br2Pd(Ph3P)2
Cl2Pd(Ph3P)2
I2Pd(Ph3P)2
(CN)2Pd(Ph3P)2
Pd2(Ph3P)2
Cl2Pd(Ph3P)3
Pd(Ph3P)4
Pd(OAc)2
Pd(SPh)2
PdMNN
Pd
Ag3OPd5O
Ag8OPd2O
Ag9OPdiO
Al8OPd2O
Mg75Pd25
Pm3d
PmCl3
Pm4d
PmCl3
Pr3d
Pr
Pr2O3
PiO2
335.1
335.1
335.2
335.2
335.5
335.2
335.3
334.6
334.9
334.9
337.4
336.2
336.8
336.2
336.4
337.1
337.8
336.3
337.9
338.0
338.2
337.3
339.0
340.2
337.8
337.8
337.5
338.2
336.6
342.9
336.0
338.6
337.7
327.8
328.8
329.8
329.7
325.5
326.4
1033.5
128.3
931.8
933.2
935.3
NyMa80
BiSw80
BiSw80
BiSw80
JHBK73, Asam76
WRDM79, WeAn80, BHHK70,
Scho72, GGM82, KBAM72
WeAn80
WeAn80
WeAn80
WeAn80
WeAn80
GGM82
AWL80
KBAM72
KBAM72
KBAM72, NKBP73
KGW74
KGW74
SeTs76
KBAM72, NKBP73
KBAM72
KBAM72
KBAM72, Nefe78
KBAM72
KBAM72, NSMS79
KBAM72
KBAM72
NSMS79
BNSA70
NSMS79
NSMS79
BBFR77
WeAn80, WRDM79
WeAn80
WeAn80
WeAn80
WeAn80
WeAn80
MNTB70
MNTB70
O
SaRa80
SaRa80
Pr4d
Pr2O3
PrO2
Pt4f
Pt
Pt
Pt
Pt
PtSi
Pt2Si
PtCl2
PtCU
PtO
PtO
PtO2
PtO2
Pl(OH)2
K2PtI6
K2PtBr4
K2PtBr6
K2PtCU
K2PtCL,
K2PtCl6
K2PtF6
Pt(NH3)4Br2
Pt(NH3)2Cl2
Pt(NH3)4Cl2
Pt(NH3)6CU
Pt(NH3)2(NO2)2
Pt(NH3)2(NO2)2
K2Pt(OH)6
K2Pt(NO2)4
K2Pt(NO2)6
(NH4)2PtCl4
Pt(Ph3P)3
Pt(Ph3P)4
Cl2Pt(Ph3P)2 cis
Cl2Pt(Ph3P)2 cis
CUPt(Et3P)2
Cl4Pt(Et3P)2
HClPtCEtsP^
O2Pt(Ph3P)2
Pt(SPh)2
Ph3PPt(SPPh2)
Cl2Pt(Et3P)2
I2Pt(Et3P)2
I2Pt(Me3P)2 cis
I2Pt(Me3P)2 trans
I2Pt(CH3CONH)4
Br2Pt(CH3CONH)4
Cl2Pt(CH3CONH)4
116.1
116.2
71.2
71.0
71.2
71.2
73.0
72.5
73.6
75.5
73.8
74.2
74.6
75.0
72.6
73.4
72.6
74.6
73.0
73.4
75.4
77.6
73.4
73.2
73.4
76.3
73.7
74.4
75.1
74.1
75.9
72.4
71.4
71.4
72.3
73.0
75.3
75.9
72.6
73.0
72.8
71.8
73.1
72.5
72.6
72.7
74.6
74.9
74.8
SaRa80
SaRa80
<P
JHBK73
BHHK70, KWD71, Nefe78,
Scho72, WRDM79, Wagn75
CMHL77, CaLe73,
HaWi77, BACB75
GGM82
GGM82
EPCC75
EPCC75
KWD71
EPCC75
KWD71
EPCC75
HaWi77
SNMK78
SNMK78
SNMK78
CMHL77, EPCC75, SNMK78
Wagn75
CoHe72, EPCC75, LeBr72,
SNMK78
SNMK78
Nefe78
CMHL77, Nefe78
SNMK78
SNMK78
Nefe78
CMHL77
SNMK78
SNMK78
SNMK78
KaE179
Nefe78
Rigg72
CAB71
Rigg72
LeBr72
Nefe78, Rigg72
Rigg72
Rigg72
BBFR77
NeSa78
Rigg72
Rigg72
CAB71
CAB71
NeSa78
NeSa78
NeSa78
234
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
Cl pt(H2NCH2CH2NH2)2
Cl2Pt(cyclooctadien)
K2PtCU
pt M5N7N7
Pt
PKM4N7N7)
Rb3d
Rb
RbCl
RbN3
Rbl
RbBr
RbCl
RbF
RbjPO4
Rb^O?
RbC104
Re4f
Re
Re
Re
Re
ReCb
ReO3
K2ReCl6
Cl3Re0(Ph3P)2
Cl2ReN(Ph3P)2
CUReCEt^
CURe(PMe2Ph)2
Cl3Re(PMe2Ph)3, mer
Cl2Re(PMe2Ph)4, trans
ClReN2(PMe2Ph)4, trans
Rh3d
Rh
Rh
Rh
Rhij
RhCl3
RhCl3-3H2O
RhCl3l2H2O
Rh2O3
Rh2O3
BaRh2O4
BeRh2O4
CaRh2O4
CoRh2o4
PbRh2O4
KRhO2
LiRhO2
ZnRh2O4
Rh2MoO6
73.0
73.9
318.1
1960.7
2041.1
111.5
109.9
109.8
110.4
110.0
109.9
109.8
110.0
110.0
110.4
40.3
40.5
40.5
41.0
43.6
46.8
44.2
43.9
42.7
43.3
43.6
41.8
40.5
40.3
307.2
307.2
307.2
308.6
310.1
310.0
310.1
308.8
308.2
308.4
308.9
308.8
308.8
308.6
308.5
308.9
308.7
309.2
YMK78
CMHL77
EPCC75
Wagn78
Wagn78
SGRS72
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73
FHR80
SSHU83, WRDM79
BHU81
BHU81
BHU81
CoHe72, LeBr72
Folk73, Nefe78
Nefe78
LeBr72
LeBr72
LeBr72
LeBr72
LeBr72, Folk73
NyMa80
OIIT79, WRDM79, FHPW73
Nefe78
OIIT79
CWH82
CMHL77
NFS82, CMHL77
OIIT79
NFS82
NFS82
NFS82
NFS82
NFS82
NFS82
NFS82
NFS82
NFS82
Rh2WO6
RhNbO4
RhTaO4
RhVO4
K3RhCl6
K3RhF6
K3Rh(NO2)6
K3Rh(NO3)6
Rh(NH3)6Cl3
Rh(NO)6Cl3
ClRh(Ph3P)3
Cl3Rh(Ph3P)3
Cl6Rh(Ph3P)3
Br6Rh(Ph3P)3
NORh(Ph3P)3
Cl3Rh(Ph3P)2MeCN
H(CO)Rh(Ph3P)2
Cl(CO)2Rh(Ph3P)
Cl(CO)Rh(Ph3P)2
Cl2Rh2(cyclooctadi)2
Rh2(OAc)4 • 2H2O
Rh(NH2CH2COO)3 • H2O
Ru3d
Ru
Ru
Ru
RuCl3
RuO2
RuO3
RuO4
Ru(NH3)5N2I2
Ru(NH3)5N2Br2
Ru(NH3)5N2Cl2
Cl3Ru(PhPMe2)3 mer
S2p
S
s
BaS
CdS
CoS
Cu2S
Cu2S
CuS
CuS
FeS
FeS2
Ga2S3
GeS
GeS2
HgS
MnS
309.4
309.2
309.5
309.2
309.8
312.2
310.5
311.1
310.5
309.8
307.4
309.7
309.7
307.9
308.2
309.6
308.5
308.7
308.6
308.7
309.0
310.3
280.1
280.0
280.1
281.8
280.7
282.5
283.3
282.2
280.5
282.5
276.6
164.0
164.1
160.1
161.7
162.0
161.3
162.4
162.0
161.3
161.6
162.9
162.2
161.8
161.7
162.0
162.5
NFS82
NFS82
NFS82
NFS82
SNMK78
Nefe78
SNMK78
SNMK78
Nefe78
Nefe78
CWH82, Nefe78, OIIT79
CWH82
Nefe78
Nefe78
Nefe78
GlWa79
OIIT79
Nefe78
CWH82, OIIT79
CMHL77, CWH82
Nefe78
NPBS74
NyMa80
Folk73, BHHK70, KiWi74,
FEMY77, WRDM79
Folk73
SaRa80, KiWi74, McGi82
KiWi74
KiWi74
Folk73
Folk73
Folk73
LeBr72
SNRS76, WRDM79,
RiVe83, LHJG70
SiWo80
BSRR81
Limo81
BSRR81
NSSP80
Limo81, NSSP80
BSRR81
Bind73, Limo81
Bind73, Limo81
TIWB72
SFS77
HKMP74
NSSP80
Limo81
• PHYSICAL ELECTRONICS
235

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
M0S2
Na2S
Na2S
NiS
PbS
Sb2S3
SnS
US
US3
WS2
WS2
ZnS
GeS2TeAs2
GeS3As2
KFeS2
Na2(S*SO3)
Na2(S*SO3)
Na2(SS*O3)
K2SO3
Na2SO3
Na2SO3
Na2SO3
Ag2SO4
A12(SO4)3
BaSO4
CaSO4
CoSO4
CuSO4
FeSO4
Fe2(SO4)3
K2SO4
MnSO4
Na2SO4
NiSO4
PbSO4
SrSO4
U(SO4)2
ZnSO4
NO2SO3
S2N2
SF6
SF6
SO2
SO2
SOCI2
SOF2
SP(NH3)3
SPCb
S2CI2
S2CI10
cs2
(CH2COOH)2S
(CH2Ph)2S
PhSH
Ph2S
162.5
160.6
161.8
162.2
160.8
161.8
161.1
161.5
162.6
162.1
163.0
164.0
161.5
161.6
161.6
162.5
161.7
167.7
167.5
165.6
166.6
167.2
168.6
168.8
168.8
169.0
169.7
169.3
168.8
169.1
169.1
171.0
168.8
169.2
168.6
169.1
169.1
169.5
166.8
164.6
174.4
177.2
167.4
168.1
168.1
170.0
162.3
163.7
163.5
174.4
163.7
163.7
163.3
163.1
163.2
SSOT81,StEd75, PCLH76
SWH71
LHJG70
ShRe79, NgHe76, DPS77
SFS77
BCH75
SFS77
SNRS76
SNRS76
NgHe76
Wagn75
Limo81
HKMP74
HKMP74
Bind73
Wagn75
LHJG70
LHJG70
TMR80
SWH71
WaTa82, LHJG70
TMR80
TMR80
LHJG70
SiWo80, CLSW83
CLSW83
Limo81
WaTa80, NSSP80, Limo81
Limo81,LHJG70
LHJG70
TMR80
Limo81
TMR80
Limo81,NSLS77,
Nefe82, ShRe79
NSSP80
CLSW83
Chad73
Nefe82
BCM78
SDIO77
WaTa82
LHJG70
WaTa82
LHJG70
LHJG70
LHJG70
FlWe75
FlWe75
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
Thiophene
Ph3PS
Ph3PS
Ph3AsS
PhSSPh
PhCH2SSCH2Ph
(PhS)3P
(PhS)3PS
BuSSBu
MeSSMe
NH2CSNH2
2-Mercaptobenzimidaz
2-Mercaptobenzimidaz
BuNH3HSO4
Bu4NHSO4
Et3NHHSO4
PhSCMe3
Tetrathionaphthalene
Cysteine
Cysteine HCl hydrate
Cysteine HCl hydrate
Methionine
NH2C6H4SO33H
(MeOS)2
Me2SO
(PhCH2)2SO
Ph2SO
Me2SO2
CH3OS(O)OCH3
MeSO2Cl
C1C6H4CH2SO2C1
PhSO2Na
P-NH2C6H4SO2C6H4NH2-
p-NH2C6H4SO2NH2
p-CH3C6H4SO2Cl
p-NH2C6H4SO3Na
p-O2NC6H4SNa
CO2NC6H4SH
o-O2NC6H4SH
p-O2NC6H4SMe
O-O2NC6H4SNH2
o-O2NC6H4SCl
P-O2NC6H4SO2F
O-O2NC6H4SO2F
PhCH2SSCH2Ph
PhCH2S*SOCH2Ph
PhCH2SS*OCH2Ph
PhCH2S*SO2CH2Ph
PhCH2SS*O2CH2Ph
(CH3)3S+I-
(CH3)3S+(O)I-
(HOOCCH2)2S+CH2COO-
SKLL
NiS
NiW2S
164.3
162.4
161.8
161.7
164.4
164.2
163.6
163.5
164.1
164.3
162.1
162.2
162.8
167.3
168.0
168.5
162.4
164.4
163.2
163.1
163.6
162.8
167.8
164.5
166.5
165.9
166.0
169.0
168.4
169.3
168.5
166.3
167.9
168.4
168.4
168.1
161.0
163.5
163.9
163.5
164.1
163.9
169.6
170.0
163.6
163.7
165.9
163.9
168.0
165.8
168.2
166.2
2116.1
2115.9
LHJG70
FlWe75, MSAV71
HVV79
HVV79
RiVe83, LHJG70
RiVe83
MSAV71
MSAV71
RiVe83
RiVe83
LeRa77, NBMO73, SrWa77
YYS79
ChHa79
EvRe81
EvRe81
EvRe81
PiLu72
RiVe83
LlMa79, LHJG70
SSEW79
LHJG70
BBFR77
HaSh73
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
LHJG70
WaTa80
Wagn78
236
<D PHYSICAL ELECTRONICS

Handbook of X-ray Fhotoelectron Spectroscopy
Appendix B. Chemical States Tables
ws2
Na2SO3
Na2(SS*O3)
Na2(S*SO3)
CuSO4
en,
o\J2
cv.
'k Ucn
iD JOS/2
Sb
Sb
AlSb
SbtfSns
Sb2S3
SbaSs
Sbl3
SbCls
SbF3
Sb2O3
Sb2O5
Rb3Sb2Br9
Rb3Sb2l9
CS3Sb2l9
Cs3Sb2Br9
Cs3Sb2Cl9
Cs3Sb2Cl9
C3SbCl6
Co(NH3)6SbBr6
Co(NH3)6SbCl6
KSbF6
KSbF6
NaSbF6
CsSbF4
KSb2F7
K2SbF5
Na2SbF5
BuNHsSbU
BuNH3Sb2l9
EuNSbF6
Ph3Sb
Bu3Sb
Ph3SbBr2
Me3SbBr2
Ph3SbS
(Ci2H25)3SSb
HuPSbCU
SbMNN
Sb
Sb2S3
Sb2S5
Sb2O3
KSbF6
2115.6
2108.5
2107.8
2112.5
2108.0
2106.2
2100.5
528.3
528.2
528.6
528.0
529.5
529.2
530.4
530.9
531.7
530.0
530.8
529.9
529.9
529.2
530.0
529.3
530.5
530.9
530.1
530.8
532.3
532.9
532.1
530.6
531.2
531.0
531.3
529.6
529.9
532.4
528.9
528.1
529.8
530.3
528.7
529.8
531.7
464 1
*TVJ*T. I
462.1
462.2
462.1
454.4
Wagn78
WaTa82
Wagn75
Wagn75
WaTa80
WaTa82
WaTa82
<D
HSBS81.MSV 73.PVVA79,
SFS77,WRDM79,Wagn75 '
MSV73
HSBS81
MSV73,Wagn75
MSV73,Wagn75
MSV73
BCH75
MSV73
MSV73,Wagn75
MSV73
Tric74
Tric74
BCH75
BCH75,Tric74
BCH75
Tric74
Tric74
Tric74
Tric74
MSV73
Wagn75
BCH75
BCH75
Tric74
Tric74
Tric74
BCH75
BCH75
BCH75
BCH75
BCH75
BCH75
BCH75
BCH75
MSV73
MSV73
WRDM79, PVVA79, Wagn75
Wagn75
Wagn75
Wagn75
Wagn75
Sc2p
be
0C2O3
oC
ScN
Sc2O3
ClSc(C5H5)2
Sc(C5H5)(C8H8)
Se3d
Se
Se
Se
As2Se3
Ga2Se3
GeSe
GeSe2
CuInSe2
In2Se3
Nb3Se4
NbSe2
PbSe
PbSe
SnSe
SnSe
MoSe2
FeSe2
SeO2
SeO2
H2Se03
H2Se03
H2Se04
Na2SeO3
Na2Se04
Na2SeS4O6
rn2oe
(r>rL-6ri4j2>jc
rn2oe2
fRrf\H,iYiSf»T
^DI V-6rl4./21-'W
(Cl4H29Se)2
l2oeril2
RroSePh?
XJ12O^I 11^
n^SePh^
Cl2SePh2
HSePh2P
SePh3P
Ph2SeO
(PhCH2)2Se0
(C4H8COOH)2SeO
PhSeO(OH)
C\C6HaScO(OH)
398.6
401.8
398.7
400.7
401.9
401.4
400.2
55.5
55.1
55.1
54.6
54.8
54.5
54.0
54.8
54.9
53.7
53.4
54.1
53.7
55.0
54.6
54.9
58.9
59.8
59.2
59.9
61.2
59.1
61.6
56.9
55.8
56.4
55.8
56.0
56.1
58.1
57.8
57.7
58.8
57.7
54.5
54.3
57.6
58.2
58.4
58.5
CO Q
JO.O
Cft 0
59.3
<D
<D
SMKM77
STAB76
NGDS75,WRDM79
WeMe78
WeMe78
4>
SFS77, BWI80, UeOd82,
WRDM79, WSP77, MTHB71
BWI80
UeOd82, WSP77
ITI82, TIWB72
SFS77
UeOd82
KJID81
KJID81
Bahl75
Bahl75
SFS77
WSP7
SFS77
WSP77
BWI79
BWI79
BWI81, ITI82
MTHB71.WSP77
BWI81
MTHB71
BWI81
WSP77
WSP77
WSP77
BWI81
MTHB71
BWI81
BWI81
MTHB71
BWI81
BWI81
BWI81
MTHB71
MTHB71
NSWM80
HVV79
BWI81
MTHB71
MTHB71
MTHB71
MTHB71
MTHB71
ATI Jl A M.MJ 1 1
^ PHYSICAL ELECTRONICS
237

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
FCeKjSeCKOH)
ClC6H4SeO2(OH)
(MeOC6H4)2SeO2
(HOC2H4S)2Se
SeLMM
Se
Se
SeO2
H2Se03
H2Se04
Na2SeO3
Ph2Se
Ph2Se2
I2SePh
Cl2SePh2
Ph2SeO
Si2p
Si
SiO2
Si
Si, p-type
Si, n-type
Si, (100)
Fe3Si
MoSi2
MoSi2
Ni2Si
NiSi
NiSi
Pd2Si
Pd3Si
PdSi
Pt2Si
PtSi
Si3N4
SiS2
SiO2
SiO2, Vycor
SiO2, quartz
SiO2, alpha Cristobal
SiO2 gel
Ni2Si04
NiSiO3
AhSiOs, kyanite
AI2S1O5, mullite
AbSiOs, sillimanite
NaAlSi3O8, albite
Bentonite
H Zeolon
Zn4Si2O7(OH)2 • 2H2O
59.3
60.2
60.0
56.2
1307.0
1306.7
1301.4
1300.8
1297.9
1301.2
1304.0
1304.3
1302.1
1302.9
1301.9
99.3
103.3
99.5
99.0
100.0
99.7
99.5
99.6
99.1
98.9
98.8
98.4
99.7
99.6
99.8
100.5
100.5
101.8
103.4
103.6
103.5
103.7
103.3
103.4
102.9
103.3
102.8
103.0
102.6
102.6
102.9
103.3
102.0
MTHB71
MTHB71
MTHB71
WSP77
BWI81
Wagn75
BWI81
BWI81
BWI81
Wagn75
BWI81
BWI81
BWI81
BWI81
BWI81
<D
AWL80, PADS78, WRDM79,
WPHK82, Tayl81, KBHN74
HBBK72
HBBK72
TLR78
ShTr75
WPHK82
BrWh78
GGM82
GGM82
AWL80
GGM82
AWL80
WaTa80
GGM82
GGM82
WHMC78, WaTa80,
Tayl81,TLR78
MoVa73
KBHN74, NGDS75,
MoVa73, Barr83
WPHK82
WPHK82, TLR 78
WPHK82
WPHK82
LFWS79
SRD79
AnSw74
AnSw74
AnSw74
WPHK82
Barr83
WPHK82
WPHK82
Hydroxysodalite
Kaolinite
Kaolinite
Mica, Muscovite
Natrolite
Pyrophyllite
AlSiOs, sillimanite
LiAlSi2O6, spodumene
Talc, Mg3Si40io(OH)2
Wollastonii,Ca3Si3O9
Mol Sieve A
Mol Sieve A
Mol Sieve A, Ca form
Mol Sieve X
Mol Sieve X
Mol Sieve X, Ca form
Mol Sieve Y
Mol Sieve Y
Mol Sieve Y, Ca form
K2SiF6
Na2SiF6
p-Methylsil. (linear)
p-Methylsil. (resin)
p-Phenylsil. (resin)
Me4Si
PluSi
PluSi
Et3SiH
Et3SiOH
Et3SiBr
Et3SiCl
Et3SiF
Et2SiCl2
EtSiCl3
(CH2=CH)4Si
Me3SiSiMe3
Me3SiOSiMe3
Ph3SiSiPh3
Ph3Si0SiPh3
Si (KLL)
Si
MoSi2
PdSi
Si3N4
SiO2
SiO2, Vycor
S1O2, quartz
S1O2, alpha Cristobal
SiO2 gel
NaAlSi3O8, albite
H Zeolon
Hemimorphite
Hydroxysodalite
Kaolinite
Mica, Muscovite
101.7
102.7
103.0
102.4
102.2
102.9
102.7
102.5
103.1
102.4
101.4
101.3
101.8
102.2
102.2
102.7
102.8
102.8
102.8
104.6
104.3
102.4
102.9
102.7
100.5
100.7
101.2
100.7
101.1
101.0
101.4
101.8
102.1
102.9
100.7
100.5
100.9
100.7
101.3
1616.6
1617.2
1617.4
1612.6
1608.8
1608.5
1608.6
1608.8
1608.3
1609.3
1608.4
1610.5
1610.7
1609.0
1609.6
WPHK82
Barr83
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
Barr83
Barr83
WPHK82
Ban-83
Barr83
WPHK82
Barr83
Barr83
MoVa73
NSLS77
WPHK82
WPHK82
WPHK82
GCH76
MoVa73
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
GCH76
WPHK82, CDN 77
WPHK82
WaTa80
WaTa80
KBHN74
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
238
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
Natrolite
Pyrophyllite
AlSiOs, sillimanite
LiAlSi2O6, spodumene
Talc, Mg3SUOio(OH)2
Wollastonii, Ca3Si3O9
Mol Sieve A
Mol Sieve X
Mol Sieve Y
p-Methylsil. (linear)
p-Methylsil. (resin)
p-Phenylsil. (resin)
Sm3d5/2
Sm
Sm
Sm2O3
Sn3d5/2
Sn
Sn
Sn
Sn
Sn alpha
Snbeta
AuSn
AuSat
• 5Sn • OO5
SnTe
SnSe
SnS
SnBr2
SnCl2
SnFi
SnF2
SnO
SnO
SnO:
BaSnCU
BafSnCfek
KSnF3
K2SnF6
NaSnF3
Na2Sn03
Na2Sn03
1609.6
1609.2
1609.5
1609.6
1608.9
1610.0
1610.1
1609.4
1608.6
1609.4
1608.8
1610.0
1081.1
1081.2
1083.4
485.0
484.9
485.1
485.0
485.0
484.6
485.6
485.2
484.9
485.3
485.6
485.2
486.4
485.2
485.6
485.7
485.6
486.9
486.7
487.0
487.0
486.0
486.9
486.7
486.7
486.8
486.8
486.7
487.6
487.4
486.2
486.7
487.2
485.1
486.3
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
DKMB76
WRDM79
NyMa80
SFS77
WRDM79, PVVA79, LAK 77,
Wagn75, OCH 79
Hegd82
Hegd82, HSBS81
HSBS81, Hegd82
FHPW73
FHPW73
Hegd82
Hegd82
Hegd82
Hegd82
Hegd82
SFS77
SFS77
SFS77
GZF73
WVV79
MoVa73
MoVa73
ADPS77
WVV79, MoVa73
LAK 77, MoVa73, WRDM79,
NGDS75, WVV79
GZF73
WVV79
WVV79
GZF73
MoVa73
Wagn75
MoVa73
Wagn75
ADPS77
WVV79
MoVa73
Ph3SnI
Ph3SnI
Ph3SnBr
Ph3SnCl
Ph3SnCl
Ph3SnCl
Ph3SnF
Ph3SnF
CUSn(pyridine)2
Cl3SnEt(pyridine)2
Cl3SnPh(pyridine)2
Me3SnF
Me2SnF2
Me2SnSO4
Bu2SnO
Cl3Sn(Me4N)
CL,Sn(Me2SO)2
SnMNN
Sn
SnS
SnO2
NaSnF3
Na2Sn03
Sr3d
Sr
Sr
SrO
SrF2
SrCO3
SrSO4
Sr(NO3)2
SrMoO4
SrRh2O4
Ta4f
Ta
Ta
Ta
Ta
TaS
TaS2
TaF5
KTaO4
RhTaO4
K2TaF7
487.1
486.3
487.5
487.5
486.3
487.0
487.6
486.2
487.3
485.6
487.3
487.2
487.2
486.7
487.1
487.0
485.6
487.0
486.1
487.0
437.4
435.7
432.7
430.8
431.7
134.3
134.4
135.3
133.8
133.2
134.3
134.7
133.5
133.0
21.9
21.6
21.6
21.9
26.6
26.7
26.9
27.3
27.8
26.7
25.9
25.8
29.4
HWVV74
WVV79
HWVV74
HWVV74
WVV79
MoVa73
HWVV74
WVV79
HWVV74
WVV79
WVV79
WVV79
WW79
WVV79
WVV79
WW79
WVV79
WVV79
GZF73
GZF73, WW79
PVVA79, Wagn75, WRDM79,
LAK 77
Wagn75
LAK77
Wagn75
Wagn75
VaVe80
VaVe80
WRDM79
CLSW83
CLSW83
CLSW83
NFS82
NFS82
VHE82
MSC73
WRDM79, WaTa80
MSC73
MSC73
MSC73
MSC73
MSC73
SaRa80, MSC 73,
NFS82, NGDS75
MSC73
NFS82
MSC73
® PHYSICAL ELECTRONICS
239

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
Cl2Ta6Cl,2(H2O)4 • 4H2O
Br6(Ta6CI,2)(Bu4N)2
Cl6(Ta6Cl12)(EuN)2
TaMNN
Ta
Tb4d
Tb
Tb2O3
TbO2
Tb3d
Tb
Tb2O3
TbO2
Te 3d5/2
Te
Te
Te
Te
Te
CdTe
GeTe
Hgo.8Cdo2Te
Na2Te
Nb3Te4
NbTe4
PbTe
SnTe
U2Te3
UTe3
ZnTe
Tel4
TeBr2
TeCL,
TeO2
TeO3
Te(OH)6
(NH4)2TeCl6
(NH4)2TeO4
K2Te03
Na2Te04
Cl2TePh2
Br2TePh2
I2TePh2
I2TeEt2
Ph2Te2
Br3TePh
I3TePh
I2TeMe2
p-tolylTeOOH
Br3TeBu
25.8
26.3
26.2
1674.8
146.0
148.7
149.2
1242.0
1241.5
1241.4
573.1
573.0
573.0
573.0
572.7
572.3
572.7
572.3
572.2
572.6
572.8
572.0
572.3
572.9
573.0
572.9
575.8
576.7
576.9
575.7
576.6
577.1
576.9
576.5
575.5
576.8
576.2
576.2
575.4
575.3
573.9
576.6
575.8
575.6
576.1
576.6
BeWa79
BeWa79
BeWa79
WaTa80
SaRa80
SaRa80
<D
SaRa80
SaRa80
<D
NyMa80
SFS77
PVVA79, WRDM79
BWI77, Bahl75
SNRS76, SWH71
SBB80
SFS77
SBB80
SWH71
Bahl75
Bahl75
SFS77
SFS77
SNRS76
SNRS76
SWH71
BWI77
BWI77
BWI77
GBP81, SBB80
SWH71
BWI77
BWI77
SWH71
SWH71
Wagn75
BWI77
BWI77
BWI77
BWI77
BWI77
BWI77
BWI77
BWI77
BWI77
BWI77
TeMNN
Te
TeBr2
TeCU
TeO2
TeO3
Te(OH)6
(NH V^TeCk
Na2Te04
Cl2TePh2
Br2TePh2
I2TePh2
I2TeEt2
Ph2Te2
Br3TePh
I3TePh
I2TeMe2
p-tolylTeOOH
Br3TeBu
Th 4f7/2
Th
Th
ThO2
ThF4
Th 4ds/2
Th
ThO2
Ti2p
Ti
TiO2
Ti
Ti
Ti
TiB2
TiN
TiCL,
TiO
TiO2
TiO2 (anatase, rutile)
BaTiO3 (cubic, tetra.)
CaTiO3
PbTiO3
SrTiO3
Cl2Ti(C5H5)2
ClTi(C5H5)2
Ti(C5H5)(C7H7)
TiLMM
Ti
492.2
487.3
486.1
487.1
485.5
485.1
486.4
485.5
486.3
486.6
487.8
487.6
488.5
486.8
488.2
486.6
486.6
486.5
333.2
333.2
334.4
336.5
675.3
675.5
454.1
458.8
453.7
453.9
453.9
454.4
455.8
458.5
455.1
458.7
459.2
458.5
458.9
458.6
458.8
457.1
455.8
455.4
419.1
WRDM79
BWI78
BWI78
BWI78
BWI78
BWI78
BWI78
Wagn75
BWI78
BWI78
BWI78
BWI78
BWI78
BWI78
BWI78
BWI78
BWI78
BWI78
<D
WRDM79
VLDH77
WRDM79
FBWF74
VLDH77
<I>
O
ALMP82
LANM81
NSCP74, WRDM79
MECC73
STAB76
MRV83
SPB76a
NSCP74, SPB76a,
WRDM79, NGDS75
MWI75
MWI75
MWI75
MWI75
MWI75
GSMJ74
GSMJ74
GSMJ74
WRDM79
240
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix B. Chemical States Tables
Tl4f
Tl
Tl
Til
TIBr
T1C1
T1F
T12S
TI2S3
TI2O3
Cl3Tl(pyridine)2
Cl6Tl2(PhPEt2)5
T_ AA
Tm4d
Tm
U4f7/2
U
U
U2Te3
UTe3
USe
USe3
US
US3
UBr3
UBr4
UCI3
ucu
UC15
UF3
UF4
UF4
UF5
U02
U3O8
U4O9
UO3
UOBr
UOBr2
U0C1
UOC12
UO2Br
UO2Br2
UO2C12
UO2F2
U(SO4)2
U02(N03)26H2O
U(acac)4
UO2(AcO)2 • 2H2O
CaUO4
U2UO4
K2UF6
117.7
117.8
118.5
119.2
119.0
119.2
118.7
118.7
117.5
118.5
117.9
175.4
377.3
377.2
380.5
381.3
380.3
379.1
380.1
379.4
378.4
379.9
378.3
380.2
381.9
380.1
382.2
382.7
382.6
380.0
381.0
379.9
381.7
380.1
380.4
380.0
380.3
380.5
381.1
381.6
382.9
381.6
382.0
379.7
381.0
380.7
381.4
382.4
<D
MBN80, WRDM79
MSC73
MSC73
MSC73
MSC73
MSC73
MSC73
MSC73
Walt77
Walt77
<D
VRPC74, Chad73, WRDM79
SNRS76
SNRS76
SNRS76
SNRS76
SNRS76
SNRS76
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
Chad73
TBVL82
VRPC74, Chad73, MSSS81
Chad73, ChGr72
HoTh79
MSSS81, Chad73, ChGr72
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82,Chad73
Chad73
Chad73
Chad73
Chad73
Chad73
Chad73
PMDS77
V2p
V
\ r /-v
V2O5
V
\ 7
V
\r
V
\r
V
V
VB2
\/TVT
VIN
v2o3
VO2
V2O5
VOC12
VOSO4
Cs3VO4
Rb3VO4
Na3VO4
Li3VO4
Rh3VO4
K4V(CN)6
V(acac)3
VO(acac)2
C1V(C5H5)2
V(C5H5)2
V(C5H5)(C7H7)
VLMM
V
VO2
V2O5
W4f
w
w
w
XkfC
WL
u/r
yvl
WS2
WRrc
wdis
■\X/T>r,
WI3r6
WOCLt
u/n,
W vy2
WigO49
WO3
WO3
A12(WO4)3
CaW04
H2WO4
H2WO4
K2WO4
512.2
517.4
512.1
512.3
512.9
513.4
512.4
513.2
514.4
515.7
516.3
517.6
516.4
515.9
516.9
516.9
517.3
517.5
516.9
513.3
514.2
515.1
513.8
512.9
513.3
472.0
468.6
468.0
31.4
31.4
31.4
31.5
32.2
33.2
36.3
35.9
36.9
37.2
32.8
34.3
35.8
35.8
36.1
35.0
35.3
36.2
36.0
<D
<D
LANM81
WRDM79, NSCP74
KKL83
SMKM77
RoRo76, LFS 73, FrSa75
MECC73
RoRo76, STAB76
CGR78
KKL83
NSLS77, NSCP74, WRDM79
NGDS75, NFS82
LFS73
LFS73
NFS82
NFS82
NFS82
NFS82
NFS82
Vann76
LFS73
LFS73
GSMJ74
GSMJ74, BCDH73
GSMJ74
WRDM79
KKL83
KKL83
<I>
VHE82
WRDM79, CoRa76, CGR 78,
BiPo73, NSLS77
CoRa76
MSC73
Wagn75
MSC73
MSC73
MSC73
MSC73
CGR78, CoRa76, NgHe76
BiPo73
SaRa80, CoRa76, CGR 78,
BiPo73, KMH 78
NFS82, NGDS75
BiPo73
Nefe82, NFS 82
CGR78
BiPo73
NFS82
ELECTRONICS
241

Appendix B. Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
Li2WO4
Na2WO4
Nao.6W03
Nao.,W03
NiWO4
Rh2WO6
(NRtJeWTO^ • 4H2O
K2WCl6
CL»W(Et3P)2
Cl3SnW(CO)3(C5H5)
Ph3PW(CO)5
Xe 3ds/2
Xe in graphite
Xe in Ag
Xe in Au
Xe in Cu
Xe in Fe
Xe in graphite
NiuXeOe
XeMNN
Xe in Fe
Xe in graphite
NiMXeOfi
Y3d
Y
Y
Y2O3
Yb4d
Yb
Yb
Yb
Yb2O3
Zn
Zn
Zn
Zn
016-^36
ZnS
36.0
36.3
35.8
35.6
35.4
35.6
36.3
34.9
34.6
32.4
31.6
669.7
669.6
668.9
669.6
670.2
669.7
674.1
544.8
545.2
541.4
156.0
155.8
156.8
182.4
181.3
182.7
185.4
1021.8
1021.9
1021.8
1021.8
1021.6
1022.0
NFS 82, MSC 73
Wagn75
BiPo73
BiPo73
NgHe76
NFS82
BiPo73
LeBr72
LeBr72
WWVV77
HVV79
<D
CiHa74
CiHa74
CiHa74
Wagn75
WRDM79
Wagn77
Wagn75
WRDM79
Wagn77
O
NyMa80
WRDM79, NGDS75
<D
HHL70, KEML74
LPWF75
HHL70
O
LANM81, LKMP73
GaWi77, KLMP74, MaDu77,
Scho73a, KPML73, KlHe83
WRDM79, Wagn75, SMKM77
VanO77
GaWi77
Zn3P2
ZnP2
Znl2
ZnBr2
ZnCl2
ZnCl2
ZnF2
ZnF2
ZnO
ZnO
Zn(acac>2
(Me4N)2ZnBr4
ZnSO4
Zn4Si2O7(OH)2-2H2O
ZnCr2O4
ZnRh2O4
ZnLMM
Zn
Zn
CU64Zn36
ZnS
Znl2
ZnBr2
ZnCl2
ZnF2
ZnF2
ZnO
ZnO
ZnO
Zn(acac)2
Zn4Si2O7(OH)2 • 2H2O
Zr3d
Zr
Zr
Zr
Zr
ZrO2
ZrF5
K2ZrF6
K3ZrF7
KZrF5 • H2O
Br2ZrCOH)2CH3CHNH2C
Cl2Zr(OH)2CH3CHNH2C
1020.6
1020.9
1023.0
1023.4
1021.9
1023.1
1022.2
1022.8
1021.8
1022.5
1021.4
1020.9
1023.1
1022.0
1022.1
1021.7
992.1
992.1
992.7
989.7
988.7
987.3
989.4
986.2
986.7
988.5
987.7
988.2
987.7
987.3
178.9
178.8
178.3
178.9
182.2
185.3
184.2
183.7
184.7
182.9
183.0
NSDU75
NSDU75
GaWi77, SATD73
Wagn75, SATD73
KlHe83
SATD73
GaWi77
Wagn75
Scho73a, WRDM79
GaWi77
Wagn75
EMGK74
Nefe82
WPHK82
BDFP81
NFS82
GaWi77, KLMP74, MaDu77,
Scho73a, KPML73, KlHe83
WRDM79, Wagn75
VanO77
GaWi77
GaWi77
Wagn75
KlHe83
GaWi77
Wagn75
Scho73a
GaWi77
KlHe83
Wagn75
WPHK82
<D
NyMa80
NSCP74
WRDM79
SaRa80, NGDS75, NSCP74
NKBP73
NKBP73
NKBP73
NKBP73
KNPP74
KNPP74
242
<D PHYSICAL ELECTRONICS

Appendix C. Chemical State Tables References
ACHT73
ADPS77
ALMP82
AMFL74
AWL80
AT76
AL77
AnSw74
Aoki76
Asam76
BACB7S
BALS76
BBFR77
BCDH73
BCGH72
BCGH73
BCH75
BCHM72
BCM78
BDFP81
BGD75
BHHK70
BHU81
BMCK77
BNMN79
BNSA70
BSRR81
Allen, G.C., Curtis, M.T., Hooper, A.J., Tucker, P.M. J Chem Soc
Dalton Trans., 1677 (1973).
Ansell, R.O., Dickinson, T., Povey, A.F., Sherwood, P.M.A. / Electron
Spectrosc. Relat. Phenom. 11, 301 (1977).
Anderson, C.R., Lee, R.N., Morar, J.F., and Park, RL J Vac Sci
Techno!. 20,617(1982).
Armour, A.W., Mitchell, P.C.H., Folkesson, B., Larsson, R. J. Less
Common Metals 36, 361 (1974).
Atzrodt, V., Wirth, T., Lange, H. Phys. Status Solidi A 62, 531 (1980).
Allen, G.C., Tucker, P.M. Inorg. Chim. Ada 16, 41 (1976).
Andersson, C, Larsson, R. Chem. Scr. 11, 140 (1977).
Anderson, PR., Swartz, W.E. Inorg. Chem. 13, 2293 (1974).
Aoki, A. Jpn. J. Appi Phys. 15, 305 (1976).
Asami, K. J. Electron Spectrosc. Relat. Phenom. 9, 469 (1976).
Bancroft, G.M., Adams, I., Coatsworth, L.L., Bennewitz, CD., Brown,
J.D., Westwood, W.D. Anal. Chem. 47, 586 (1975).
Bancroft, G.M., Adams, I., Lampe, H., Sham, T.K. /. Electron
Spectrosc. Relat. Phenom. 9, 191 (1976).
Best, S.A., Brant, P., Feltham, R.D., Rauchfuss, T.B., Roundhill, D.M.,
Walton, R.A. Inorg. Chem. 16, 1977 (1977).
Barber, M., Connor, J.A., Derrick, L.M.R., Hall, M.B., Hillier, I.H. J.
Chemical Soc, 560(1973).
Barber, M, Connor, J.A., Guest, M.F., Hall, M.B., Hillier, I.N.,
Meredith, W. Discuss. Faraday Soc. 54, 220 (1972).
Barber, M., Connor, J.A., Guest, M.F., Hillier, I.H., Schwarz, M.,
Stacey, M. 7. Chem. Soc. Faraday Trans. 1169, 551 (1973).
Birchall, T., Connor, J.A., Hillier, I.H. J. Chem. Soc. Dalton Trans.,
2003 (1975).
Barber, M., Connor, J.A., Hillier, I.H., Meredith, W.N.E. J. Electron
Spectrosc. Relat. Phenom. 1, 110 (1972).
Barbaray, B., Contour, J.P., Mouvier, G. Env. Sci. Technol. 12, 1294
(1978).
Battistoni, C, Dormann, J.L., Fiorani, D., Paparazzo, E., Viticoli, S.
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Bonnelle, J.P., Grimblot, J., D'Huysser, A. J. Electron Spectrosc. Relat.
Phenom. 7, 151 (1975).
Baer, Y, Heden, P.F., Hedman, J., Klasson, M., Nordling, C, Siegbahn,
K. Phys. Scr. 1,55(1970).
Broclawik, E., Haber, J., Ungier, L. J. Phys. Chem. Solids 42, 203
(1981).
Battistoni, C, Mattogno, G., Cariati, F, Kaldini, L., Sgamellotti, A.
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Berndsson, A., Nyholm, R., Martensson, N., Nilsson, R., Hedman, J.
Phys. Status Solidi (b) 93, K103 (1979).
Blackburn, J.R., Nordberg, C.R., Stevie, F, Albridge, R.G., Jones,
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Bhide, V.G., Salkalachen, S., Rastogi, A.C., Rao, C.N.R., Hegde, M.S.
J. Phys. D 14, 1647 (19S\). „ t „
Burger, K. Tschismarov, F., Ebel, H., I Electron Spectrosc.
Phenom. 10, 461 (1977).
BWI77
BWI78
BWI79
BWI80
BWI81
BWWI76
BaSt75
Bahl75
Barr83
BeFI80
BeWa79
Bert81
BiPo73
BiSw80
Bind73
BrFe76
BrFr74
BrMc72
BrWh78
BuBu74
CAB71
CBA73
CBR76
CDFM82
CDH74
CDN77
CELC76
CFRS80
CGR78
CKAM72
CKAM75
CKM71
Bahl, M.K. Watson, R.L., Irgolic, K.J., J. Chem. Phys. 66, 5526
(1977).
Bahl, M.K. Watson, R.L., Irgolic, K.J., J. Chem. Phys. 68, 3272
(1978).
Bahl, M.K. Watson, R.L., Irgolic, K.J., Phys. Rev. Lett. 42, 165 (1979).
Bahl, M.K. Watson, R.L., Irgolic, K.J., J. Chem. Phys. 72, 4069
(1980).
Bahl, M.K. Watson, R.L., Irgolic, K.J., cf (se3d-L3) WGR, Anal.
Chem. 51, 466 (1979).
Bahl, M.K. Woodall, R.O., Watson, R.L., Irgolic, K.J., / Chem. Phys.
64, 1210 (1976).
Barrie, A. Street, F.J., J. Electron Spectrosc. Relat. Phenom. 7, 1
(1977).
Bahl, M.K. J. Phys. Chem. Solids 36, 485 (1975).
Barr, T.L. Appl. Surf. Sci. 15, 1 (1983).
Bertrand, P.A. Fleischauer, P.D., /. Vac. Sci. Technol. 17, 1309, (1980).
Best, S.A., Walton, R.A. Inorg. Chem. 18, 486 (1979).
Bertrand, P. A., J. Vac. Sci. Technol. 18, 28 (1981).
Bilden, P., Pott, G.T. / Catal. 30, 169 (1973).
Bird, R.J., Swift, P. J. Electron Spectrosc. Relat. Phenom. 21, 227
(1980).
Binder, H. Z Naturforsch. B 28, 256 (1973).
Brant, P., Feltham, R.D. J. Organometal. Chem. C53, 120 (1976).
Brand, P., Freiser, H. Anal. Chem. 46, 1147 (1974).
Brinen, J.S., McClure, J.E. Anal. Lett. 5, 737 (1972).
Brainard, W.A., Wheeler, D.R. J. Vac. Sci. Technol. 15, 1801 (1978).
Burger, K., Buvari, A. Inorg. Chim. Acta, 11, 25 (1974).
Clark, D.T., Adams, D.B., Briggs, D. J. Chem. Soc. Chem. Commun.,
603(1971).
Clark, D.T., Briggs, D., Adams, D.B. J. Chem. Soc. Dalton Trans., 169
(1973).
Chuang, T.J., Brundle, C.R., Rice, D.W. Surf. Sci. 59, 413 (1976).
Capece, F.M., Dicastro, V., Furlani, C, Mattogno, G., Fragale, C, Gar-
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(1982).
Connor, J.A., Derrick, L.M.R., Hillier, I.H. J. Chem. Soc. Faraday
Trans. 1170,941 (1974).
Carlson, T.A., Dress, W.B., Nyberg, G.L. Phys. Scr. 16, 211 (1977).
Chatt, J., Elson, CM., Leigh, G.J., Connor, J.A. J. Chem. Soc. Dalton
Trans., 1352(1976).
Clark, D.T., Fok, T., Roberts, G.G., Sykes, R.W. Thin Solid Films 70,
261 (1980).
Colton, R.J., Guzman, A.M., Rabalais, J.W. J. Appi Phys. 49, 409
(1978).
Clark, D.T., Kilcast, D., Adams, D.B., Musgrave, W.K.R. J. Electron
Spectrosc. Relat. Phenom. 1, 232 (1972).
Clark, D.T., Kilcast, D., Adams, D.B., Musgrave, W.K.R. J. Electron
Spectrosc. Relat. Phenom. 6, 117 (1975).
Clark, D.T., Kilcast, D., Musgrave, W.K.R. J. Chem. Soc. Chem. Com-
mun.,,517 (1971).
$ PHYSICAL ELECTRONICS
243
note: The references in the Chemical States Tables are made with three or four letters witch represent authors' initials. Three or four capital letters indicate
three or more authors; alternating upper- and lower-case letters represent two aotors (the letters are the first two letters of each last name); and a capital letter
followed by three lower case letters indicates a single author. The initials are followed by two digits, whichrepresent the last two digits of the year of publication
This may be followed by a small letter, to distinguish between two othe vuicrwise laentical reference notations.

Appendix C. Chemical States Tables References
Handbook of X-ray Photoelectron Spectroscopy
CLSW83 Christie, A.B., Lee, J., Sutherland, I., Walls, J.M. Appl. Surf. Sci. 15,
224(1983).
CMHL77 Contour, J.P., Mouvier, G., Hoogewijs, M., LeClere, C. J. Catal. 48,
217(1977).
CSC72 Carver, J.C., Schweitzer, G.K., Carlson, T.A. J. Chem. Phys. 57, 973
(1972).
CSFG79 Contour, J.P., Salesse, A., Froment, M., Garreau, M., Thevenin, J.,
Warin, D. J. Microsc. Spectrosc. Electron. 4, 483 (1979).
CWH82 Carvalho, M., Wieserman, L.F., Hercules, D.M. Appl. Spectrosc. 36,
290(1982).
CaLe73 Cahen, D., Lester, J.E. Chem. Phys. Lett. 18, 109 (1973).
ChGr72 Chadwick, D., Graham, J., Nature (London) Phys. Sci, 237, 127
(1972).
ChHa79 Chadwick, D., Hashemi, T. Surf. Sci. 89, 649 (1979).
Chad73 Chadwick, D. Chem. Phys. Lett. 21, 293 (1973).
CiDe75 Cimino, A., De Angelis, B.A. J. Catal. 36, 11 (1975).
CiHa74 Citrin, P.H., Hamann, D.R. Phys. Rev. B 10, 4948 (1974).
Citr73 Citrin, PH., Phys. Rev., B 8, 8 (1973).
ClAd71 Clark, D.T., Adams, I. J. Chem. Soc. Chem. Commun., 741 (1971).
ClRi76 Clarke, T.A., Rizkalla, E.N. Chem. Phys. Lett. 37, 523 (1976).
ClTh78 Clark, D.T., Thomas, H.R., J. Polym. Sci.Polym. Chem. Ed., 16, 791
(1978).
CoHe72 Cox, L.E., Hercules, D.M. / Electron Spectrosc. Relat. Phenom. 1,
193 (1972).
CoRa76 Colton, R.J., Rabalais, J.W. Inorg. Chem. 15, 237 (1976).
DKMB76 Dufour, G., Karnatak, R.D., Mariot, J.M., Bonnelle, C. Chem. Phys.
Lett. 42, 433 (1976).
DPS76 Dickinson, T., Povey, A.F., Sherwood, P.M.A. J. Chem. Soc. Faraday
Trans. 7 72,686(1976).
DPS77 Dickinson, T., Povey, A.F., Sherwood, P.M.A. J. Chem. Soc. Faraday
Trans. 7 73,332(1977).
DSBG82 Dharmadhikari, V.S., Sainkar, S.R., Badrinarayan, S., Goswami, A. J.
Electron Spectrosc. Relat. Phenom. 25, 181 (1982).
Dale76 Dale, A.J. Phosphorus 6, 81 (1976).
EMGK74 Escard, J., Mavel, G., Guerchais, J.E., Kergoat, R. Inorg. Chem. 13,
695 (1974).
EPC75 Escard, J., Pontvianne, B., Contour, J.P. J. Electron Spectrosc. Relat.
Phenom. 6, 17(1975).
EPCC75 Escard, J., Pontvianne, B., Chenebaux, M.T., Cosyns, J. Bull. Chim.
Soc. Fr., 2400 (1975).
EvRe81 Everhart, D.S., Reilley, C.N. Surf. Interface Anal. 3, 258 (1981).
FBWF74 Fuggle, J.C., Burr, A.F., Watson, L.M., Fabian, D.J., Lang, W. J. Phys.
7*" 4, 335(1974).
FCFG77 Fontaine, R., Caillat, R., Feve, L., Guittet, M.J. J. Electron Spectrosc.
Relat. Phenom. 10, 349 (1977).
FEMY77 Fisher, G.B., Erikson, N.E., Madey, T.E., Yates, J.T. Surf. Sci. 65, 210
(1977).
FHPW73 Friedman, R.M., Hudis, J., Perlman, M.L., Watson, R.E. Phys. Rev. B
8, 2434 (1973).
FHR80 Fukuda, Y., Honda, F., Rabalais, J.W. Surf. Sci. 93, 335 (1980).
FHT77 Freeland, B.H., Habeeb, J.J., Tuck, D.G. Can. J. Chem. 55, 1528
(1977).
FKWF77 Fuggle, J.C., Kallne, E., Watson, L.M., Fabian, D.J. Phys. Rev. 7316,
750(1977).
FMUK77 Franzen, H.F., Merrick, J., Umana, M., Khan, A.S., Peterson, D.T., Mc-
Creary, JR., Thorn, R.J. J. Electron Spectrosc. Relat. Phenom. 11, 439
(1977).
FSJL83 Folkesson, B., Sundberg, P., Johansson, L., Larsson, R. J. Electron
Spectrosc. Relat. Phenom. 32, 248 (1983).
FWFA75 Fuggle, J.C., Watson, L.M., Fabian, D.J., Affirossman, S. J. Phys. F 5,
375(1975).
FWUM79 Fischer, A.B., Wrighton, M.S., Umana, M., Murray, R.W. J. Am. Chem.
Soc. 101, 3442 (1979).
FaBa79 Fahey, D.R., Baldwin, B.A. Inorg. Chim. Ada 36, 269 (1979).
FlWe75 Fluck, E., Weber, D. Z Anorg. Allg. Chem. 412, 47 (1975).
FoLa82 Folkesson, B., Larsson, R. J. Electron Spectrosc. Relat. Phenom. 26,
157(1982).
Folk73 Folkesson, B. Ada Chem. Scand. 27, 287 (1973).
FrSa75 Franzen, H.F., Sawatzky, G. J. Solid State Chem. 15, 229 (1975).
Fugg77 Fuggle, J.C. Surf. Sci. 69, 581 (1977).
GBMP79 Grimblot, J., Bonnelle, J.P., Mortreux, A., Petit, F. Inorg. Chim. Acta
34,29(1979).
GBP81 Garbassi, F, Bart, J.C.J., Petrini, G. J. Electron Spectrosc. Relat.
Phenom. 22, 95 (1981).
GCH76 Gray, R.C., Carver, J.C, Hercules, D.M. J. Electron Spectrosc. Relat.
Phenom. 8, 343 (1976).
GGM82 Grunthaner, P.J., Grunthaner, F.J., Madhukar, A. J. Vac. Sci, Technol.
20, 680 (1982).
GGVL79 Grunthaner, F.J., Grunthaner, P.J., Vasquez, R.P., Lewis, B.F., Maser-
jian, J., Madhukar, A. J. Vac. Sci Technol. 16, 1443 (1979).
GHHL70 Gelius, U., Heden, P.F., Hedman, J., Lindberg, B.J., Manne, R.,
Nordberg, R., Nordling, C, Siegbahn, K. Phys. Scr. 2, 70 (1970).
GMD79 Gresch, R., Mueller-Warmuth, W., Dutz, H. J. Non-Cryst. Solids 34,
127(1979).
GPDG79 Gajardo, P., Pirotte, D., Defosse, C, Grange, P., Delmon, B. J. Electron
Spectrosc. Relat. Phenom. 17, 121 (1979).
GSMJ74 Groenenboom, C.J., Sawatzky, G., Meijer, H.J.D., Jellinek, F. J. Or-
ganometal. Chem. C4, 76 (1974).
GZF73 Grutsch, P.A., Zeller, M.V., Fehlner, T.P. Inorg. Chem. 12, 1432 (1973).
GaWi77 Gaarenstroom, S.W., Winograd, N. J. Chem. Phys. 67, 3500 (1977).
GlWa79 Glicksman, H.D., Walton, R.A. Inorg. Chim Acta 33, 255 (1979).
GrHe77 Gray, R.C., Hercules, D.M. Inorg. Chem. 16, 1426 (1977).
GrMa75 Grim, S.O., Matienzo, L.J. Inorg. Chem. 14, 1014 (1975).
HAS75 Haider, H.C., Alonso, J., Swartz, W.E., Z Naturforsch A 30, 1485
(1975).
HBBK72 Hedman, J., Baer, Y, Berndtsson, A., Klasson, M., Leonhardt, G.,
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(1972).
HFV77 Hoogewijs, R., Fiermans, L., Vennik, J. J. Electron Spectrosc. Relat.
Phenom. 11, 171 (1977).
HGW75 Hammond, J.S., Gaarenstroom, S.W., Winograd, N. Anal. Chem. 47,
2194(1975).
HHDD81 Hammond, J.S., Holubka, J.W., Devries, J.E., Duckie, R.A. Corros.
Sci 21, 239(1981).
HHJ69 Hendrickson, D.N., Hollander, J.M., Jolly, W.L. Inorg. Chem. 8, 2642
(1969).
HHJ70 Hendrickson, D.N., Hollander, J.M., Jolly, W.L. Inorg. Chem. 9, 612
(1970).
HHL70 Hagstrom, S.B.M., Heden, P.O., Lofgren, H. Solid State Commun. 8,
1245 (1970).
244
CD PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix C. Chemical States Tables References
HJGN70 Hamrin, K., Johansson, G., Gelius, U., Nordling C Sieehahn v
Phys. Scr. 1,277 (1970). " S "' K"
HKMP74 Hollinger, G., Kumurdjian, P., Mackowski, J.M., Pertosa, P., Porte L
Due, Tran Minh J. Electron Spectrosc. Relat. Phenom. 5, 237 (1974)
HMUZ78 Haber, J., Machej, T., Ungier, L., Ziolkowski, J. J. Solid State Chem
25,207(1978).
HNUW78a Haycock, D.E., Nicholls, C.J., Urch, D.S., Webber, M.J., Wiech G J
Chem. Soc. Dalton Trans., 1791 (1978).
HNUW78 Haycock, D.E., Nicholls, C.J., Urch, D.S., Webber, M.J., Wiech, G J
Chem. Soc. Dalton Trans., 1785 (1978).
HSBS81 Hegde, R.I., Sainkar, S.R., Badrinarayanan, S., Sinha, A.P.B. J.
Electron Spectrosc. Relat. Phenom. 24, 19 (1981).
HSU76 Haber, J., Stoch, J., Ungier, L. J. Electron Spectrosc. Relat. Phenom. 9
459(1976).
HUGH79 Haycock, D., Urch, D.S., Garner, CD., Hillier, I.H. J. Electron
Spectrosc. Relat. Phenom. 17, 345 (1979).
HVV79 Hoste, S., Van De Vondel, D.F., Van Der Kelen, G.P. J. Electron
Spectrosc. Relat. Phenom. 17, 191 (1979).
HWVV74 Hoste, S., Willeman, H., Van De Vondel, D., Van Der Kelen, G. P. J.
Electron Spectrosc. Relat. Phenom. 5, 227 (1974).
HaSh73 Harker, H., Sherwood, P.M.A. Phil Mag. 27, 1241 (1973).
HaWa74 Hamer, A.D., Walton, R.A. Inorg. Chem. 13, 1446 (1974).
HaWi77 Hammond, J.S., Winograd, N. J. Electrochem. Electroanal. Chem. 78,
55 (1977).
HeMaSO Hedman, J., Martensson, N. Phys. Scr. 22, 176 (1980).
Hegd82 Hegde, R.I. Surf. Interface Anal. 4, 205 (1982).
HoTh79 Howng, W.Y, Thorn, R.J. Chem. Phys. Lett. 62, 57 (1979).
HoTh80 Howng, W.Y, Thorn, R.J. J. Chem. Phys. Solids 41, 75 (1980).
HuBa74 Hughes, W.B., Baldwin, B.A. Inorg. Chem. 13, 1531 (1974).
IIKK76 Ikemoto, I., Ishii, K., Kinoshita, S., Kuroda, H., Franco, M.A.A.,
Thomas, J. J. Solid State Chem. 17, 425 (1976).
IKIM73 Ihara, H., Kumashiro, Y., Itoh, A., Maeda, K. Jpn. J. Appl. Phys. 12,
1462 (1973).
IMNN79 Iwasaki, H., Mizokawa, Y, Nishitani, R., Nakamura, S. Surf. Sci. 86,
811 (1979).
ITI82 Iwakuro, H., Tatsuyama, C, Ichimura, S. Jpn. J. Appl. Phys. 21, 94
(1982).
InYa81 Inoue, Y, Yasumori, I. Bull. Chem. Soc. Jpn. 54, 1505 (1981).
JHBK73 Johansson, G., Hedman, J., Berndtsson, A., Klasson, M., Nilsson, R. J.
Electron Spectrosc. Relat. Phenom. 2, 295 (1973).
KBAM72 Kumar, G., Blackburn, J.R., Albridge, R.G., Moddeman, W.E., Jones,
M.M. Inorg. Chem. 11, 296 (1972).
KBAW74 Kim, K.S., Baitinger, W.E., Amy, J.W., Winograd, N. J. Electron
Spectrosc. Relat. Phenom. 5, 351 (1974).
KBHN74 Klasson, M., Berndtsson, A., Hedman, J., Nilsson, R., Nyholm, R.,
Nordling, C. J. Electron Spectrosc. Relat. Phenom. 3, 427 (1974).
KDMl Krishnan, N.G., Delgass, W.N., Robertson, W.D. J. Phys. F 7, 2623
K£ML74 Kowalczyk, S.P., Edelstein, N., McFeely, F.R., Ley, L., Shirley, D.A.
Chem. Phys. Lett. 29, 491 (1974).
KGW74 Rim, K.S., Gossmann, A.F., Winograd, N. Anal. Chem. 46 197 (9/4 •
KGW76 Kim, K.S., Gaarenstroom, S.W., Winograd, N. Chem. Phys. Utt. 41,
WSC80 Kazmetlki!' L.L., Ireland, P.J., Sheldon, P, Chu, T.L., Chu, S.S., Lin,
C.J. Vac. Sci. Technol. 17, 1061 (1980).
KJID81
KKL83
KLMP73
KLMP74
KMH78
KNNH68
KNPP74
KOK83
KOW73
KPML73
KSPB76
KTWY76
KWD71
KaE179
Kilk73
KiWi73
KiWi74
KiWi75
Kim75
KIHe83
KoNa80
LAK77
LANM81
LBHK73
LBNN78
LDDB80
LFBC80
LFS73
LFWS79
LHJG70
LKMP73
LMF80
LMKJ75
Kazmerski, L.L., Jamjoum, O., Ireland, P.J., Deb, S.K., Mickelsen,
R.A., Chen, W. J. Vac. Sci., Technol. 19, 467 (1981).
Kasperkiewicz, J., Kovacich, J.A., Lichtman, D. J. Electron Spectrosc.
Relat. Phenom. 32, 128 (1983).
Kowalczyk, S.P., Ley, L., McFeely, F.R., Pollak, R.A., Shirley, D.A.
Phys. Rev. B 8, 3583 (1973).
Kowalczyk, S.P., Ley, L., McFeely, F.R., Pollak, R.A., Shirley, D.A.
Phys. Rev. B 9, 381 (1974).
Kerkhof, F.P.J., Moulijn, J.A., Heeres, A. J. Electron Spectrosc. Relat.
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Karlsson, S.E., Norberg, C.H., Nilsson, O., Hogberg, S., El-Farrash,
A.H., Nordling, C, Siegbahn, K. Arkiv Fur Fysik 38, 349 (1968).
Kharitonova, L.C., Nefedov, V.I., Pankratova, L.N., Pershin, V.L. Zh.
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Kohiki, S., Ohmura, T., Kusao, K. J. Electron Spectrosc. Relat.
Phenom. 31, 85 (1983).
Kim, K.S., O'Leary, T.J., Winograd, N. Anal. Chem. 45, 2214 (1973).
Kowalczyk, S.P., Pollak, R.A., McFeely, F.R., Ley, L., Shirley, D.A.
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Kaplunov, M.G., Shulga, Y.M., Pokhodnya, K.I., Borodko, Y.G. Phys.
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Kinomura, F, Tamura, T., Watanabe, I., Yokoyama, Y, Ikeda, S. Bull.
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Kim, K.S., Winograd, N., Davis, R.E. J. Am. Chem. Soc. 93, 6296
(1971).
Katrib, A., El-Egaby, M.S. Inorg. Chim. Ada 36, L405 (1979).
Kishi, K., Ikeda, S. Bull. Chem. Soc. Jpn. 46, 341 (1973).
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Kim, K.S., Winograd, N. Chem. Phys. Lett. 30, 91 (1975).
Kim, K.S. Phys. Rev. B 11, 2177 (1975).
Klein, J.C., Hercules, D.M. J. Catal. 82, 424 (1983).
Konno, H., Nagayama, M. J. Electron Spectrosc. Relat. Phenom. 18,
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Lin, A.W.C., Armstrong, N.R., Kuwana, T. Anal. Chem. 49, 1228
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Lebugle, A., Axelsson, U., Nyholm, R., Martensson, N. Phys. Scr. 23,
825(1981).
Leonhardt, G., Berndtsson, A., Hedman, J., Klasson, M., Nilsson, R.
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Lindberg, B., Berndtsson, A., Nilsson, R., Nyholm, R., Exner, O. Acta
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Lerebours, B., Duerr, J., D'Huisser, A., Bonnelle, J.P., Leuglet, M.
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Lasser, R., Fuggle, J.C., Beyss, M., Campagna, M., Steglich, F, Hul-
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Larsson, R., Folkesson, B., Schoen, G. Chem. Scr. 3, 88 (1973).
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Larsson, R., Malek, A., Folkesson, B. Chem. Scr. 16, 47 (1980).
Ley, L., McFeely, F.R., Kowalczyk, S.P., Jenkin, J.G., Shirley, D.A.
Phys. Rev. fill, 600(1975).
$ PHYSICAL ELECTRONICS
245

Appendix C. Chemical States Tables References
Handbook of X-ray Photoelectron Spectroscopy
LPGC77 Lindau, I., Pianetta, P., Gamer, CM., Chye, P.E., Gregory, P.E., Spicer,
W.E. Surf. Sci. 63,45(1977).
LPMK74 Ley, L., Pollak, R.A., McFeely, F.R., Kowalczyk, S.P., Shirley, D.A.
Phys. Rev. 5 9,600(1974).
LPWF75 Lang, W.C., Padalia, B.D., Watson, L.M., Fabian, D.J. J. Electron
Spectrosc. Relat. Phenom. 7, 357 (1975).
LaFo76 Larsson, R., Folkesson, B. Chem. Scr. 9, 148 (1976).
LaKe76 Lavielle, L., Kessler, H. J. Electron Spectrosc. Relat. Phenom. 8, 95
(1976).
LaLu79 Larkins, F.P., Lubenfeld, A. / Electron Spectrosc. Relat. Phenom. 15,
137(1979).
LeBr72 Leigh, G.J., Bremser, W. J. Chem. Soc. Dalton Trans., 1217 (1972).
LeRa77 Lee, T.H., Rabalais, J.W. J. Electron Spectrosc. Relat. Phenom. 11, 112
(1977).
LiHe75 Lindberg, B.J., Hedman, J. Chem. Scr. 7, 155 (1975).
Limo81 Limouzin-Maire, Y. Bull. Soc. Chim. Fr. I, 340 (1981).
LlMa79 Llopiz, P., Maire, J.C. Bull. Chim. Soc. Fr., 457 (1979).
MBN80 Martensson, N., Berndtsson, A., Nyholm, R. J. Electron Spectrosc.
Relat. Phenom. 19, 299 (1980).
MECC73 Mavel, G., Escard, J., Costa, P., Castaing, J. Surf. Sci. 35, 109 (1973).
MIN81 Mizokawa, Y., Iwasaki, H., Nakamura, S. Jpn. J. Appl. Phys. 20, L491
(1981).
MINN78 Mizokawa, Y, Iwasaki, H., Nishitani, R., Nakamura, S. J. Electron
Spectrosc. Relat. Phenom. 14, 129 (1978).
MKLP73 McFeely, F.R., Kowalczyk, S.P., Ley, L., Pollak, R.A., Shirley, D.A.
Phys. /tev. 5 7, 5228(1973).
MMRC72 Mason, R., Mingos, D.M.P., Rucci, G., Connor, J.A. J. Chem. Soc.
Dalton Trans., 1730(1972).
MNTB70 Malmsten, G., Nilsson, O., Thoren, I., Bergmark, J.E. Phys. Scr. 1, 37
(1970).
MRV83 Mousty-Desbuquoit, C, Riga, J., Verbist, J.J. J. Chem. Phys. 79, 26
(1983).
MSAV71 Morgan, W.E., Stec, W.J., Albridge, R.G., Van Wazer, J.R. Inorg.
Chem. 10,926(1971).
MSC73 McGuire, G.E., Schweitzer, G.K.K., Carlson, T.A. Inorg. Chem. 12,
2451 (1973).
MSSS81 Mclntyre, N.S., Sunder, S., Shoesmith, D.W., Stanchell, F.W. J. Vac.
Sci. Technol. 18,714(1981).
MSV73 Morgan, W.E., Stec, W.J., Van Wazer, J.R. Inorg. Chem. 12, 953
(1973).
MSV79 Maroie, S., Savy, M., Verbist, J.J. Inorg. Chem. 18, 2560 (1979).
MTHB71 Malmsten, G., Thoren, I., Hogberg, S., Bergmark, J.E., Karlsson, S.E.
Phys. Scr. 3,96(1971).
MVS73 Morgan, W.E., Van Wazer, J.R., Stec, W.J. / Am. Chem. Soc. 95, 751
(1973).
MWI75 Murata, M., Wakino, K., Ikeda, S. J. Electron Spectrosc. Relat.
Phenom. 6,459(1975).
MaDu77 Mariot, J.M., Dufour, G. Chem. Phys. Lett. 50, 219 (1977).
MaWo75 Matsuura, I., Wolfs, M.W.J. J. Catal. 37, 174 (1975).
McCo75 Mclntyre, N.S., Cook, M.G. Anal. Chem. 47, 2208 (1975).
McGi82 McEvoy, A.J., Gissler, W. Phys. Status Solidi A 69, K91 (1982).
McTh76 McCreary, J.R., Thome, R.J. J. Electron Spectrosc. Relat. Phenom. 8,
425(1976).
McWe76 McGilp, J.F., Weightman, P. J. Phys. C 9, 3541 (1977).
McZe77 Mclntyre, N.S., Zetaruk, D.G. Anal. Chem. 49, 1521 (1977).
MoVa73 Morgan, W.E., Van Wazer, J.R. J. Phys. Chem. 77, 96 (1973).
MWLF78 Moses, P.R., Wier, L.M., Lennox, J.C., Finklea, H.O., Lenhard, F.R.,
Murray, R.U. Anal. Chem. 50, 579 (1978).
NBK74 Nefedov, V.I., Buslaev, Y.A., Kokunov, Y.V. Zh. Neorg. Khim. 19, 1166
(1974).
NBMO73 Nefedov, V.I., Baranovskii, I.B., Molodkin, A.K., Omuralieva, V.O. Zh.
Neorg. Khim. 18, 1295(1973).
NFS82 Nefedov, V.I., Firsov, M.N., Shaplygin, I.S. /. Electron Spectrosc.
Relat. Phenom. 26, 65 (1982).
NGDS75 Nefedov, V.I., Gati, D., Dzhurinskii, B.F., Sergushin, N.P., Salyn, Y.V.
Zh. Neorg. Khim. 20, 2307 (1975).
NIMN78 Nishitani, R., Iwasaki, H., Mizokawa, Y, Nakamura, S. Jpn. J. Appl.
Phys. 17, 321 (1978).
NIS72 Nagakura, I., Ishii, T., Sagawa, T. J. Phys. Soc. Japan 33, 758 (1972).
NKBP73 Nefedov, V.I., Kokunov, Y.V., Buslaev, Y.A., Porai-Koshits, M.A., Gus-
tyakova, M.P., Il'In, E.G. Zh. Neorg. Khim. 18, 931 (1973).
NMSI74 Nefedov, V.I., Molodkin, A.K., Salyn, Y.V., Ivanova, O.M., Porai-
Koshits, M.A., Balakaeva, T.A., Belyakova, Z.V. Zh. Neorg. Khim. 19,
2628(1974).
NNBF68 Nilsson, O., Norberg, C.H., Bergmark, J.E., Fahlman, A., Nordling, C,
Siegbahn, K. Helv. Phys. Ada 41, 1064 (1968).
NPBS74 Nefedov, V.I., Prokof eva, I.V., Bukanova, A.E., Shubochkin, L.K.,
Salyn, Y.V., Pershin, V.L. Zh. Neorg. Khim. 19, 1578 (1974).
NSBN77 Nefedov, V.I., Salyn, Y.V., Baronovskii, I.B., Nikolskii, A.B. Zh.
Neorg. Khim. 22, 1715 (1977).
NSCP74 Nefedov, V.I., Salyn, Y.V., Chertkov, A.A., Padurets, L.N. Zh. Neorg,
Khim. 19, 1443(1974).
NSDU75 Nefedov, V.I., Salyn, Y.V., Domashevskaya, E.P., Ugai, Y.A., Terekhov,
V.A. J. Electron Spectrosc. Relat. Phenom. 6, 231 (1975).
NSLS77 Nefedov, V.I., Salyn, Y.V., Leonhardt, G., Scheibe, R. J. Electron
Spectrosc. Relat. Phenom. 10, 121 (1977).
NSMS79 Nefedov, V.I., Salyn, Y.V., Moiseev, I.I., Sadovskii, A.P., Berenbljum,
A.S., Knizhnik, A.G., Mund, S.L. Inorg. Chim. Acta 35, L343 (1979).
NSSP80 Nefedov, V.I., Salyn, Y.V., Solozhenkin, P.M., Pulatov, G.Y. Surf. Inter-
face Anal. 2, 171 (1980).
NSWM80 Nefedov, V.I., Salyn, Y.V., Walther, B., Messbauer, B., Schoeps, R.
Inorg. Chim. Acta 45, LI03 (1980).
NSWU77 Nefedov, V.I., Salin, J.V., Walther, D., Uhlig, E., Dinjus, E. Z. Chem.
17, 191 (1977).
NZB78 Nefedov, V.I., Zhumadilov, E.K., Baer, L. Zh. Neorg. Khim 23, 2113
(1978).
NZK77 Nefedov, V.I., Zhumadilov, A.K., Konitova, T.Y. J. Struct. Chem. USSR
18,692(1977).
NeBa72 Nefedov, V.I., Baranovskii, I.B. Zh. Neorg. Khim. 17, 466 (1972).
NeSa78 Nefedov, V.L, Salyn, Y.V. Inorg. Chim. Acta 28, L135 (1978).
Nefe78 Nefedov, V.I. Koord. Khim. 4, 1285 (1978).
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NgHe76 Ng, K.T., Hercules, D.M. J. Phys. Chem. 80, 2095 (1976).
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OCH79 Okamoto, Y, Carter, W.J., Hercules, D.M. Appl. Spectrosc. 33, 287
(1979).
OHI75 Oku, M., Hirokawa, K., Ikeda, S. J. Electron Spectrosc. Relat.
Phenom. 7,465 (1975).
OIIT79 Okamoto, Y, Ishida, N., Imanaka, T., Teranishi, S. J. Catal. 58, 82
(1979).
OYK74 Ohta, T., Yamada, M., Kuroda, H. Bull. Chem. Soc. Japan. 47, 1158
(1974).
246
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix C. Chemical States Tables References
OkHI76
PADS78
PCLH76
PEJ82
PFD73
PKHL80
PKLJ73
PKLS72
PLJL73
PMDS77
PRCV77
PWA79
PWA79
PeKa77
PiLu72
RBO72
RGBH80
RHJF69
RNS73
RRD78
RSKC82
^8872
RiVe83
RoRo76
SATD73
SBB*0
SCKK75
SDI°77
SDR80
25L
Oku, M., Hirokawa, K. J. Electron Spectrosc. Relat. Phenom 8 475
(1976). '
Povey, A.F., Ansell, R.O., Dickinson, T., Sherwood PMA /
Electronal. Chem. 87, 189(1978). ' " '
Patterson, T.A., Carver, J.C., Leyden, D.E., Hercules, DM J Phv*
Chem. 80, 1702(1976). ' y
Powell, C.J., Erickson, N.E., Jach, T. J. Vac. Sci. Technol 20 625
(1981).
Pignataro, S., Foffani, A., Distefano, G. Chem. Phys. Lett 20 351
(1973).
Praline, G., Koel, B.E., Hance, R.L., Lee, H.I., White, J.M. J. Electron
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Poole, R.T., Kemeny, P.C., Liesegang, J., Jenkins, J.G., Leckey, R C G
J. Phys. F3, L46(1973).
Pollak, R.A., Kowalczyk, S.P., Ley, L., Shirley, D.A. Phys. Rev. Lett
29,274(1972).
Poole, R.T., Leckey, R.C.G., Jenkin, J.G., Liesegang, J. Phys. Rev. B 8,
1401 (1973).
Pireaux, J.J., Martensson, N., Didriksson, R., Siegbahn, K., Riga, J.,
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Pireaux, J.J., Riga, J., Caudano, R., Verbist, J.J., Delhalle, J., Delhalle,
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Pessa, M., Vuoristo, A., Vulli, M., Aksela, S., Vayrynen, J., Rantala, T.,
Aksela, H. Phys. Rev. B 20, 3115 (1979).
Parry-Jones, A.C., Weightman, P., Andrews, P.T. J. Phys. C 12, 1587
(1979).
Peterson, L.G., Karlsson, S.E. Phys. Scr. 16, 425 (1977).
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Ryzhkov, M.V., Gubanov, V.A., Butzman, M.P., Hagstrom, A.L., Kur-
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SGRS72
SGSO70
SMAV72
SMBM76
SMKM77
SNMK78
SNRS76
SPB76
SPB76a
SRD79
SRH72
SRHH78
SSEW79
SSHU83
SSOT81
STA74
STAB76
STHU76
SWH71
SZNS77
SaRaSO
ScBrSl
ScOs82
ScSc82
Scho72
Scho73
Scho73a
Scho73b
SeTs76
Shlq78
ShRe79
ShTr75
Sher76
SiLe78
Sharma, J., Gora, T., Rimstidt, J.D., Staley, R. Chem. Phys Lett. 15
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$ PHYSICAL ELECTRONICS
247

Appendix C. Chemical States Tables References
Handbook of X-ray Photoelectron Spectroscopy
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SmWa77 Smith, T.J., Walton, R.A. J. Inorg. Nucl. Chem. 39, 1331 (1977).
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Swif82 Swift, P. Surf. Interface Anal. 4, 47 (1982).
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TBVL82 Thibaut, E., Boutique, J., Verbist, J.J., Levet, J.C., Noel, H. J. Am.
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TIWB72 Thomas, J.M., Adams, I., Williams, R.H., Barber, M. J. Chem. Soc.
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TLR78 Taylor, J.A., Lancaster, G.M., Rabalais, J.W. J. Electron Spectrosc.
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TMR80 Turner, N.H., Murday, J.S., Ramaker, D.E. Anal. Chem. 52, 84 (1980).
TRLK73 Tolman, C.A., Riggs, W.M., Linn, W.J., King, CM., Wendt, R.C.
Inorg. Chem. 12, 2772 (1973).
TVG76 Teuret-Noel, C, Verbist, J., Bogillon, Y. J. Microsc. Spectrosc.
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TaRa81 Taylor, J.A., Rabalais, J.W. J. Chem. Phys. 75, 1735 (1981).
Tayl81 Taylor, J.A. Appl. Surf. Sci. 7, 168 (1981).
Tayl82 Taylor, J.A. J. Vac. Sci. Technol. 20, 751 (1982).
ThSh78 Thomas, J.H., Sharma, S.P. J. Vac. Sci. Technol. 15, 1707 (1978).
Tric74 Tricker, M.J. Inorg. Chem. 13, 743 (1974).
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VLDH77 Veal, B.W., Lam, D.J., Diamond, H., Hoekstra, H.R. Phys. Rev. B 15,
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VRPC74 Verbist, J., Riga, J., Pireaux, J.J., Caudano, R. J. Electron Spectrosc.
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VVSW77 Van De Vondel, D.F., Van Der Kelen, G.P., Schmidbaur, H., Wolleben,
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23,4369(1981).
VWVB77 Van De Vondel, D.F., Wuyts, L.F., Van Der Kelen, G.P., Bevemage, L.
J. Electron Spectrosc. Relat. Phennom. 10, 389 (1977).
VaVe80 Van Doveren, H., Verhoeven, J.A. J. Electron Spectrosc. Relat.
Phenom. 21, 265 (1980).
VanO77 Van Ooij, W.J. Surface Technology 6, 1 (1977).
Vann76 Vannerberg, N.G. Chem. Scr. 9, 122 (1976).
Vayr81 Vayrynen, J. J. Electron Spectrosc. Relat. Phenom. 22, 27 (1981).
WHMC78 Wittberg, T.N., Hoenigman, J.R., Moddeman, WE., Cothern, C.R.,
Gulett, M.R. J. Vac. Sci. Technol. 15, 348 (1978).
WPHK82 Wagner, CD., Passoja, D.E., Hillery, H.F., Kinisky, T.G., Six, H.A.,
Jansen, W.T., Taylor, J.A. J. Vac. Sci. Technol. 21, 933 (1982).
WRDM79 Wagner, CD., Riggs, W.M., Davis, L.E., Moulder, J.F., Mullenberg,
G.E. Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer
Corporation, Physical Electronics Division, Eden Prairie, MN 55344
(1979).
WSP77 Weser, U., Sokolowski, G., Pilz, W. J. Electron Spectrosc. Relat.
Phenom. 10,429(1977).
WVV79 Willemen, H., Van De Vondel, D.F., Van Der Kelen, G.P. Inorg. Chim.
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WWC78 Wertheim, G.K., Wernick, J.H., Crecelius, G. Phys. Rev. B 18, 878
(1978).
WWVV77 Willemen, H., Wuyts, L.F., Van De Vondel, D.F., Van Der Kelen, G.P.
J. Electron Spectrosc. Relat. Phenom. 11, 245 (1977).
WZR80 Wagner, CD., Zatko, D.A., Raymond, R.H. Anal. Chem. 52, 1445
(1980).
WaTa80 Wagner, CD., Taylor, J.A. J. Electron Spectrosc. Relat. Phenom. 20,
83(1980).
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211 (1982).
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Photoelectron Spectroscopy, Ed. Briggs, Heyden and Sons, London
(1977).
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Wagn81 Wagner, CD. private communication (1981).
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(1978).
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V.G., Zhilinskaya, V.V., Tomashevsky, N.A. J. Electron Spectrosc.
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(1978).
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(1979).
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YoSa74 Yoshida, T., Sawada, S. Bull. Chem. Soc. Jpn. 47, 50 (1974).
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Yosh78 Yoshida, T. Bull. Chem. Soc. Jpn. 51, 3257 (1978).
Yosh80 Yoshida, T. Bull. Chem. Soc. Jpn. 53, 498 (1980).
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248
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix C. Chemical States Tables References
Acknowledgment: Physical Electronics, Inc. (PHI) acknowled
Tables. The entries in the tables, used with his permission were 11
^ contributio™ to the Chemical States
Wagner in collaboration with PHI.
* PHYSICAL ELECTRONICS
249

Appendix D. Valence Band Spectra
In some cases, the chemical shifts observed in core level XPS are not sufficient to identify the surface chemistry of a particular sample. In the case of XPS analysis of polymers, the
changes in carbon chemistry may be quite subtle in core level XPS or the chemical shifts may be only a secondary or tertiary effect. With the routine use of monochromators m XPS
and the high counting rates made possible by current spectrometer technologies, many analysts use valence bands for identification of materials. In many cases, the valence bands
are used as fingerprints for a sample or a surface treatment, rather than for identifying specific molecular orbitals. The fingerprints of the valence bands may then be used to aid in
both the identification of polymers and the quantification of polymer mixtures by using methods such as linear least squares fitting. The following is a small compilation of valence
band spectra of organic and inorganic materials to illustrate the utility of valence band data.
-5 35
Poly(methyl methacrylate)
Binding Energy (eV)
Binding Energy (eV)
Poly(isobutyl methacrylate)
Binding Energy (eV)
Binding Energy (eV)
-5 35
Binding Energy (eV)
Poly(n-butyl methacrylate)
Binding Energy (eV)
250
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix D. Valence Band Spectra
Binding Energy (eV)
-5 35
Corona-treated
Poly(propylene)
-5
Binding Energy (eV)
-5 35
Binding Energy (eV)
Binding Energy (eV)
-5 35
Binding Energy (eV)
Binding Energy (eV)
* PHYSICAL ELECTRONICS
251

Appendix E. Atomic Sensitivity Factors for X-ray Sources at 90c
This table is based upon empirical peak area values* corrected for the system's transmission function. The values are only valid for and
should only be applied when the electron energy analyzer used has the transmission characteristics of the spherical capacitor type
analyzer equipped with an Omni Focus HI lens supplied by Physical Electronics. The data are calculated for x-rays at 90° relative to
the analyzer.
Element Line
ASF
Ag
Al
Ar
As
Au
B
Ba
Be
Bi
Br
C
Ca
Cd
Ce
Cl
Co
Cr
Cs
Cu
Dy
Er
3d
2p
2p
3d
4f
Is
4d
Is
4f
3d
Is
2p
3d5/2
3d
2p
2p
2p
3d5/2
2p
4d
4d
5.198
0.193
1.011
0.570
5.240
0.159
2.627
0.074
7.632
0.895
0.296
1.634
3.444
7.399
0.770
3.255
2.201
6.032
4.798
2.198
2.184
Element Line
ASF
Eu
F
Fe
Ga
Gd
Ge
Hf
Hg
Ho
I
In
Ir
K
Kr
La
Li
Lu
Mg
Mn
Mo
N
4d
Is
2p
2p3/2
4d
2p3/2
4f
4f
4d
3d5/2
3d5/2
4f
2p
3d
3d
Is
4d
2s
2p
3d
Is
2.210
1.000
2.686
3.341
2.207
3.100
2.221
5.797
2.189
5.337
3.777
4.217
1.300
1.096
7.708
0.025
2.156
0.252
2.420
2.867
0.477
Element Line
ASF
Na
Nb
Nd
Ne
Ni
O
Os
P
Pb
Pd
Pm
Pr
Pt
Rb
Re
Rh
Ru
S
Sb
Sc
Se
Is
3d
3d
Is
2p
Is
4f
2p
4f
3d
3d
3d
4f
3d
4f
3d
3d
2p
3d5/2
2p
3d
1.685
2.517
4.697
1.340
3.653
0.711
3.747
0.412
6.968
4.642
3.754
6.356
4.674
1.316
3.327
4.179
3.696
0.570
4.473
1.678
0.722
Element Line
ASF
Si
Sm
Sn
Sr
Ta
Tb
Tc
Te
Th
Ti
Tl
Tm
U
V
W
Xe
Y
Yb
Zn
Zr
2p
3d5/2
3d
4f
4d
3d
4f7/2
2p
4f
4d
4f7/2
2p
4f
3d5/2
3d
4d
2p3/2
3d
0.283
2.907
4.095
1.578
2.589
2.201
3.266
4.925
7.498
1.798
6.447
2.172
8.476
1.912
2.959
5.702
1.867
2.169
3.354
2.216
*C.D Wagner, et al. Surf. Interface Anal. 3, 211 (1981).
252
CD PHYSICAL ELECTRONICS

Appendix F. Atomic Sensitivity Factors for Y c
J cl0rs lor X-ray Sources at 54.7°
This table is based upon empirical peak area values* corrected for ,h
should only be applied when the electron energy analyzer used h7s Z'Tan^™"? ^'^ ^ mlueS are «*> ^Mand
analyzer equipped with an Omni Focus III lens supplied by Physical EkctZTT", chamcteristks <* ** spherical capacitor type
the analyzer. ' ^ctronics. The data are calculated for x-rays at 54. V relative to
Element
Ag
Al
At
As
Au
B
Ba
Be
Bi
Br
C
Ca
Cd
Ce
Cl
Co
Cr
Cs
Cu
Dy
Er
Line
3d
2p
2p
3d
4f
Is
3d5/2
Is
4f
3d
Is
2p
3d5/2
3d
2P
2p
2p
3d5/2
2p
4d
4d
ASF
5.987
0.234
1.155
0.677
6.250
0.159
7.469
0.074
9.140
1.053
0.296
1.833
3.974
8.808
0.891
3.590
2.427
7.041
5.321
2.474
2.463
Element
Eu
F
Fe
Ga
Gd
Ge
Hf
Hg
Ho
I
In
Ir
K
Kr
La
Li
Lu
Mg
Mn
Mo
N
Line
4d
Is
2p
2p3/2
4d
2p3/2
4f
4f
4d
3d5/2
3d5/2
4f
2p
3d
3d
Is
4d
2s
2p
3d
Is
ASF
2.488
1.000
2.957
3.720
2.484
3.457
2.639
6.915
2.469
6.206
4.359
5.021
1.466
1.287
9.122
0.025
2.441
0.252
2.659
3.321
0.477
Element
Na
Nb
Nd
Ne
Ni
0
Os
P
Pb
Pd
Pm
Pr
Pt
Rb
Re
Rh
Ru
S
Sb
Sc
Se
Line
Is
3d
3d
Is
2p
Is
4f
2p
4f
3d
3d
3d
4f
3d
4f
3d
3d
2p
3d5/2
2p
3d
ASF
1.685
2.921
5.671
1.340
4.044
0.711
4.461
0.486
8.329
5.356
4.597
7.627
5.575
1.542
3.961
4.822
4.273
0.666
5.176
1.875
0.853
n<ieme
Si
Sm
Sn
Sr
Ta
Tb
Tc
Te
Th
Ti
Tl
Tm
U
V
W
Xe
Y
Yb
Zn
Zr
nt Line
2p
3d5/2
3d5/2
3d
4f
4d
3d
3d5/2
4f7/2
2p
4f
4d
4f7/2
2p
4f
3d5/2
3d
4d
2p3/2
3d
ASF
0.339
3.611
4.725
1.843
3.082
2.477
3.776
5.705
9.089
2.001
7.691
2.454
10.315
2.116
3.523
6.64
2.175
2.451
3.726
2.576
*C.D Wagner, et al. Surf. Interface Anal 3, 211 (1981).
* PHySICAL ELECTRONICS
253

Appendix G. Line Positions8* by Element for Al Ka X-rays
Atomic Number/Element
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
a)
Is
Li
Be
B
C
N
0
F
Ne
Na
Mg
Al
Si
P
S
a
Ar
K
Ca
Sc
T\
V
Cr
Mn
Fe
Co
Ni
Cu
Zn
Ga
Ge
As
Se
Br
Kr
Rb
Sr
Y
Zr
56
112
189
285
398
531
685
863
1072
1303
2s
23
30
41
64
89
118
151
188
228
271
320
380
440
499
561
626
6%
769
845
925
1009
1097
1195
1301
2pi/2 2pj/2
14
31
50
73
100
131
165
201
244
297
351
404
460
520
583
650
720
793
870
953
1045
1144
1248
1359
99
130
164
199
242
294
347
399
454
512
574
639
707
778
853
933
1022
1117
1217
1324
3s
14
18
17
24
35
45
51
59
66
75
83
92
101
111
123
140
160
181
205
232
256
287
325
360
394
430
Photoelectron Lines
3pi/2 3p3/2 3db/2 3dy
6
19
26
29
33
37
43
48
53
60
67
77 75
91 89 10
107 104 19
126 122 30 . 29
146 141 43 42
169 163 57
189 182 70
216 208 88
249 240 113
281 270 136
311 299 158
343 330 181
56
69
87
111
134
156
179
2 4s
15
21
31
39
45
51
4pi/2 4paa
5
8
16
21
24
28
Lines enclosed in boxes are the ones which are most useful for identifying chemical states
b) Includes KVV designation when L23
c) Designation is oversimplified.
d)
is not a core level.
Includes LVV when M levels are not in core and MVV when N levels are not in core.
e) No simple 4pi/2 line exists for this group of elements.
L3M23M23C> L2M23M23C)
838
778
719
660
597
534
1419
1394
1367
1336
1304
1272
1239
1197
1149
1098
1048
997
944
888
831
772
712
652
589
525
1386
1385
KL1L1
1013
878
725
561
Auger Lines
KL1L23
999
859
702
532
381 mi
L3M23M45 (*P) L3M23M45 (*P)
1118
1068
1014
959
900
839
777
712
648
582
514
444
371
299
771
706
640
573
504
433
360
287
M45N23V M45N45N45
1368
1356
1337
0 The 4d doublet for these elements is complex and is variable with chemical state because of multiplet splitting and multi-electron processes.
g) The 5s is of low intensity and is often in the shake-up structure of the 4f lines. These values are estimates of the energy.
KLijLzj
1384
1310
1223
1107
978
832
669
493
3U1
L2M13M45 ('P)
628
559
487
412
336
257
L3M45M4S*
977
917
852
784
713
641
568
495
419
342
262
181
- - ■- ■
L2M45M4S
698
624
548
472
392
310
226
140
254
<D PHYSICAL ELECTRONICS

Atomic Number/Element
3s 3pw 3p
4s
41
42 Mo
43 Tc
44 Ru
45
46 Pd
47 Ag
48 Cd
49 In
50 Sn
51 Sb
52 Te
53 I
54 Xe
55 Cs
56 Ba
57 La
58 Ce
59 Pr
60 Nd
61 Pm
62 Sm
63 Eu
64 Gd
65 Tb
66 Dy
67 Ho
68 Er
69 Tm
70 Yb
71 Lu
72 Hf
73 Ik
74 W
75 Re
76 Os
77 Ir
78 ft
79 Au
80 Hg
81 Tl
82 Pb
83 Bi
90 Hi
92 U
93 Np
94 Pu
95 Am
Cm
97 Bk
98 Cf
467 376
506 412
544 445
586 484
629 521
671 560
719 604
772 652
828 703
885 757
944 813
1009 871
1071 930
1141 996
1219 1069
1292 1138
1208
1272
1339
361
394
425
462
497
533
573
618
665
715
767
820
875
934
1002
1064
1128
1184
1242
1301
205
231
257
284
312
340
374
412
452
493
537
583
630
683
740
7%
853
902
952
1003
1060
1108
1155
1218
1276
1333
1393
202
228
253
280
307
335
368
405
444
485
528
573
619
670
726
781
836
884
932
981
1034
1081
56
63
68
75
81
88
98
110
123
137
153
170
187
207
234
254
275
290
305
320
337
349
1126 363
1186 378
1241 3%
1296 417
1352 435
451
470
482
509
534
563
594
625
658
692
725
763
805
847
893
940
1330
173
193
213
223
234
245
264
283
289
291
322
337
353
368
384
389
413
437
463
491
518
548
578
609
643
682
720
762
806
43e>
48
52
60
69
78
89
99
111
123
139
161
179
197
207
218
228
242
250
255
272
285
297
309
321
333
341
360
380
401
424
446
471
495
520
547
579
610
644
679
11
17
25
33
42
51
63
80
93
106
112
41
49
61
77
90
103
109
115"
121
129
129
1170 965
1272 1043
1327 1086
1121
206
222
238
256
274
293
312
332
353
381
406
434
464
713
779
816
850
883
919
958
994
1%
211
226
243
260
279
297
315
335
361
385
412
440
676
736
771
802
832
865
901
933
9
16
24
33
42
54
64
74
88
105
122
142
162
342
388
414
439
463
487
514
541
7
14
22
31
40
51
61
71
84
101
118
137
157
333
377
402
427
449
473
498
523
15
17
18
18
19
22
19
19
21
22
23
12
17
17
25
31
34
36
38
39
38
41
39
43
45
48
49
52
53
51
57
63
69
75
99
89g) 44
96*' 48
1038* 52
HO8* 57 74
1258* 85 67
133g) 95 74
15O8' 107 84
161** 119 93
294 234 177
322 260 195
206
216
30
31
32
30
34
38
43
47
24
24
25
24
27
30
33
37
351
216
232
246
12
15
21
27
93
103
119
10
13
18
24
85
94
101
105
109
113
120
124
42
44
25
26
29
31
31
32
34
35
17
17
18
18
18
18
18
19
1319
1299
1280
1256
1234
1211
1191
1135
1110
1084
1058
1032
1005
982
955
931
900
867
1287
1264
1241
1212
1185
1159
1129
1103
1076
1049
1022
995
971
942
918
886
854
833
797
758
714
682
637
602
559
526
488
440
398
411
368
314
273
1317 1306
1316 1306
1320 1307
1322 1309
1326 1311
1329 1314
1334 1317 NsNtO
1342 1324 1247 1231
1336 1246 1230
1364 1343 1241 1222
1369 1354
WwV NcrCfeV
1419 1239
1412 1204
260
98
230
117
56
N7O45O4S
1416
1412 1406
1401 1399
1394 1391
1387 1383
1335 1404
1386
• PHYSICAL ELECTRONICS
255

Appendix H. Line Positions'" by Element for Mg Ka X-rays
Atomic Number/Element
Is 2s
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Li
Be
B
C
N
O
F
Ne
Na
Mg
Al
Si
P
S
a
Ar
K
Ca
Sc
Ti
V
Cr
Mn
Fe
Co
Ni
Cu
Zn
Ga
Ge
As
Se
Br
Kr
Rb
Sr
Y
Zr
56
112
189
285
398
531
685
863
1072
1303
23
30
41
64
89
118
151
188
228
271
320
380
440
499
561
627
696
769
845
925
1009
1097
1195
2pi/2
14
31
50
73
100
131
165
201
244
297
351
404
460
520
583
650
720
793
870
953
1045
1144
1248
2p3/2
99
130
164
199
242
294
347
399
454
512
574
639
707
778
853
933
1022
1117
1217
3s
14
18
17
24
35
45
51
59
66
75
83
92
101
HI
123
140
160
181
205
232
256
287
325
360
394
430
Photoelectron Lines
6
19
26
29
33
37
43
48
53
60
67
77 75
91 89
107 104
126 122
146 141
169 163
189 182
216 208
249 240
281 270
311 299
343 330
10
[79
30
43
57
70
88
113
136
158
181
3d.
w
42
56
69
87
111
134
156
179
i 4s
15
21
31
39
45
51
4pi/2 4pj/2
5
8
16
21
24
28
L3M23M23
605
545
486
427
364
301
c) L2M23M230
1186
1161
1134
1103
1071
1039
1006
964
916
865
815
764
711
655
598
539
479
419
356
292
M23M45N23
1153
1152
KL1L1
780
645
492
328
148
L3M23M4S (*P)
895
835
781
726
667
606
544
479
415
349
281
211
M45N23V
1123
1160
Auger Lines
KL1L23
766
626
469
299
114
L3M23M45 ft)
538
473
407
340
271
200
M45N45N4S
1104
1151
1077
990
874
745
599
436
260
68
L2M23M45 ('P)
395
326
254
179
L3M45M4S*
744
684
619
551
480
408
335
262
186
109
L2M4SM43
465
391
315
239
159
77
a) Lines enclosed in boxes are the ones which are most useful for identifying chemical states.
b) Includes KVV designation when L23 is not a core level.
c) Designation is oversimplified.
d) Includes LVV when M levels are not in core and MVV when N levels are not in core.
e) No simple 4pi/2 line exists for this group of elements.
f) The 4d doublet for these elements is complex and is variable with chemical state because of multiplet splitting and multi-electron processes.
g) The 5s is of low intensity and is often in the shake-up structure of the 4f lines. These values are estimates of the energy.
256
<D PHYSICAL ELECTRONICS

Atomic Number/Element
3s 3pw 3pw
i\
HI
M
43
44
45
46
47
At
40
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
90
92
01
73
94
95
96
97
98
— —
Mb
Mo
Tc
Ru
Rh
Pd
Ag
Cd
In
Sn
Sb
Te
1
Xe
Cs
Ba
La
Ce
Pr
Nd
Pm
Sm
Eu
Gd
Tb
Dy
Ho
Er
Tm
Yb
Lu
Hf
Ta
W
Re
Os
Ir
ft
Au
Hg
Tl
Pb
Bi
Th
U
Np
Pu
Am
Cm
Bk
Cf
—. -
467
506
544
586
629
671
719
772
828
885
944
1009
1071
1141
1219
376
412
445
484
521
560
604
652
703
757
813
871
930
9%
1069
1138
1208
361
394
425
462
497
533
573
618
665
715
767
820
875
934
1002
1064
1128
1184
1242
3dOT
205
231
257
284
312
340
374
412
452
493
537
583
630
683
740
796
853
902
952
1003
1060
1108
1155
1218
Msn
202
228
253
280
307
335
368
405
444
485
528
573
619
670
726
781
836
884
932
981
1034
1081
1126
1186
1241
4s
56
63
68
75
81
88
98
110
123
137
153
170
187
207
234
254
275
290
305
320
337
349
363
378
396
417
435
451
470
482
509
534
563
594
625
658
692
725
763
805
847
893
940
4pi
173
193
213
223
234
245
264
283
289
291
322
337
353
368
384
389
413
437
463
491
518
548
578
609
643
682
720
762
806
1170
1272
n 4py2
31
36
39
43e>
48
52
60
69
78
89
99
HI
123
139
161
179
197
207
218
228
242
250
255
272
285
297
309
321
333
341
360
380
401
424
446
471
495
520
547
579
610
644
679
965
1043
1086
1121
4c
1
la/2 <
■
'hotoelectron Lin
W5/2 4fM 4f7/3
11
11
17
25
33
42 41
51 49
63 61
80 77
93 90
106 103
112 109
115°
121
129
129
128
140
146
152
159
167
175
182
206 196
222 211
238 226
256 243
274 260
293 279
312 297
332 315
353 335
381 361
406 385
434 412
464 440
713 676
779 736
816 771
850 802
883 832
919 865
958 901
994 933
8
8
8
9
9
8
3
9
16
24
33
42
54
64
74
88
107
122
142
162
342
388
414
439
463
487
514
541
es
7
14
22
31
40
51
61
71
84
103
118
137
157
333
377
402
427
449
473
498
523
5s
12
18
17
25
31
34
36
38
39
38
41
39
43
45
48
49
52
53
51
57
63
69
75
99
89
96*
103*
1108)
125*
133D
150g)
161*
294
322
351
Spin
30
31
32
30
34
38
43
47
85
95
107
119
234
260
1 C
1 J
17
18
18
19
22
19
19
21
22
23
44
48
52
74
-
5p«
24
24
25
24
27
30
33
37
67
74
84
93
177
195
206
216
216
232
246
Sdj/
12
15
21
27
93
103
119
—
2 5dv
—
10
13
18
24
85
94
101
105
109
113
120
124
■
2 6s 6pt
42 25
44 26
29
31
31
32
34
35
a 6pm
17
17
18
18
18
18
18
19
M45N23V
1086
1066
1047
1023
1001
978
958
NsN«7N7
1084
1085
1087
1089
1093
1096
1101
1109
1119
1131
1136
NsOuV
1186
1179
auger Lines
MsN4sN4sd) M4N4SN45* M45N4SV
902
877
851
one
oZj
799
772
749
722
698
667
634
1073
1073
1075
1076
1078
1081
1084
1091
1103
1110
1121
NnO4sV
1006
971
1054
1031
1008
979
952
926
896
870
843
816
7oq
/ey
if.')
toz
738
709
685
653
621
600
564
525
481
449
404
369
326 170
N5N7O N4N«O
1014 998
1013 997
1008 989
M5W
N7O45O45
M4W
NcOusC
1183
1179
1168
1161
1154
1102
1173
1166
1158
1150
1171
1153
* PHYSICAL ELECTRONICS
257

Appendix J. Line Positions in Numerical Order
For photoelectron lines, the spin orbit splitting is indicated in parentheses. Auger lines are in italics, and the photon source for the
Auger excitation is indicated in parentheses.
1
14
23
22
25
29
30
31
37
40
41
42
43
48
49
50
51
53
56
60
61
64
67
69
71
73
75
77
84
87
89
Lu 4f7/2
Hf4f7/2
O2s
Ta4f
Sn4d
Ge 3d5/2
F2s
W 4f7/2
V3p
Re 4f7/2
Ne2s
As 3d5/2
Cr3p
Mn 3p
I 4d5/2
Mg 2p
Os 4f7/2
Fe3p
Li Is
Se 3d5/2
Co3p
Ir 4f7/2
Xe 4d5/2
Na2s
Ni3p
Br 3d5/2
Pt 4f7/2
A12p
Cu 3p3/2
Cs 4d5/2
Au 4f7/2
Kr 3d5/2
Zn 3p3/2
(2)
(2)
(2)
(1)
(2)
(2)
(1)
(2)
(3)
(1)
(3)
(2)
(1)
(3)
(2)
(3)
(4)
(1)
(2)
89
90
98
99
101
103
104
109
112
115
117
118
121
122
128
129
131
134
137
140
141
146
151
152
156
157
160
163
164
167
Mg2s
Ba 4d5/2
Er
Si 2p3/2
Hg 4f7/2
La 4d5/2
Ga 3p3/2
Ce 4d5/2
Ge
Rb 3d5/2
Be Is
Pr4d
Ho
Tl 4f7/2
A12s
Nd4d
Ge 3p3/2
Eu4d
Sm4d
P 2p3/2
Sr 3d5/2
Pb 4f7/2
Gd4d
As 3p3/2
Tb4d
Si 2s
Dy4d
Y 3d5/2
Bi 4f7/2
Ho4d
Se 3p3/2
S 2p3/2
Er4d
(3)
(Al)
(1)
(4)
(3)
(3)
(3)
(Mg)
(1)
(Al)
(4)
(4)
(1)
(2)
(5)
(5)
(2)
(5)
(6)
(1)
175
179
181
182
186
188
189
196
199
202
208
211
226
228
240
242
243
260
262
270
271
279
280
285
294
297
Tm4d
Zr 3d5/2
Se
Yb4d
Br 3p3/2
Ga
P2s
B Is
Lu 4d5/2
Cl 2p3/2
Nb 3d5/2
Kr 3p3/2
Hf4d5/2
Ta 4d5/2
S 2s
Mo 3d5/2
Rb 3p3/2
Ar 2p3/2
W 4d5/2
Re 4d5/2
Na
Tb
Zn
As
Sr 3p3/2
C12s
Os 4d5/2
Ru 3d5/2
Tb 4p3/2
C Is
K 2p3/2
Dy 4p3/2
Ir4d5/2
(2)
(Al)
(7)
(Mg)
(10)
(2)
(3)
(8)
(H)
(12)
(3)
(9)
(2)
(13)
(14)
(Mg)
(Al)
(Mg)
(Al)
(11)
(14)
(4)
(37)
(3)
(40)
(15)
299
301
307
309
315
320
321
330
333
335
341
342
347
360
361
368
369
377
380
385
394
398
399
404
405
408
412
419
436
Y 3p3/2
Mg
Rh 3d5/2
Ho 4p3/2
Pt 4d5/2
Ar 2s
Er 4p3/2
Zr 3p3/2
Th 4f7/2
Tm 4p3/2
Pd 3d5/2
Au 4d5/2
Cu
Yb 4p3/2
Ge
Ca 2p3/2
Lu 4p3/2
Hg 4d5/2
Nb 3p3/2
Ag 3d5/2
Gd
U 4f7/2
K2s
Tl 4d5/2
Mo 3p3/2
N Is
Sc 2p3/2
Eu
Cd 3d5/2
Ni
Pb 4d5/2
Ga
Ne
(12)
(Al)
(5)
(44)
(17)
(47)
(14)
(9)
(51)
(5)
(18)
(Mg)
(48)
(Al)
(3)
(53)
(20)
(15)
(6)
(Mg)
(11)
(21)
(17)
(5)
(Mg)
(7)
(Mg)
(22)
(Al)
(Mg)
258
<D PHYSICAL ELECTRONICS

Handbook of X-ray Photoelectron Spectroscopy
Appendix J. Line Positions in Numerical Order
440 Ca 2s
449 Sm
441 Bi4d5/2
444 In 3d5/2
454 Ti2p3/2
462 Ru3p3/2
480 Co
485 Sn3d5/2
493 Na
495 In
497 Rh3p3/2
499 Sc2s
512 V2p3/2
525 Nd
526 Dy
528 Sb3d5/2
531 Ols
533 Pd3p3/2
551 Fe
561 Ti2s
564 Pr
568 Cu
573 Ag3p3/2
Te 3d5/2
574 Cr2p3/2
599 F
600 Ce
602 Gd
619 Cd3p3/2
I 3d5/2
634 La
637 Eu
639 Mn2P
641 Ni
653 Ba
665 In3p3/2
667 Mn
3/2
(Mg)
(24)
(8)
(6)
(22)
(8)
(A/)
(Al)
(24)
(8)
(A/)
(9)
(27)
(A/)
(31)
(10)
(9)
(Mg)
(Mg)
(Al)
(34)
(12)
(Mg)
(Al)
(11)
(Al)
(Mg)
(38)
870 Cd
C
1005 Te
1006 A:
77i
1014 V
1022 Zn 2p3/2
1032 Sb
1039 Ar
1049
1068 Ti
1071 C/
1072 Na Is
1076 In
1077 B
1081 Sm3d5/2
1086 M>
1103 S
(Mg)
(18)
(Al)
(Mg)
(Al)
(Mg)
(Al)
(Mg)
(20)
(20)
(Al)
(Mg)
(Al)
(Mg)
(Mg)
(Al)
(Al)
(Mg)
(21)
(Mg)
(Al)
(Mg)
(Mg)
(Al)
(23)
(Al)
(Mg)
(Al)
(Al)
(Mg)
(Al)
(Mg)
(27)
(Mg)
(Mg)
1103 Cd
1107 N
1117 Ga2p3/2
1126 Eu3d5/2
1129 Ag
1149 Sc
1154 Bi
1159 Pd
1161 Pb
1168 Tl
1179 Hg
1183 Am
1185 Rh
1186 Gd3d5/2
1197 Ca
1204 U
1212 Ru
1217 Ge 2p3/2
1223 C
1239 Th
K
1241 Tb 3d5/2
1272 Ar
1296 Dy 3d5/2
1299 Mo
1303 Mg Is
1304 Cl
1310 £
1319 Nb
1324 As 2p3/2
1336 5
1387 Bi
1394 />£
1401 77
1412 Hg
1416Am
(Al)
(Al)
(27)
(30)
(Al)
(Al)
(Mg)
(Al)
(Mg)
(Mg)
(Mg)
(Mg)
(Al)
(32)
(Al)
(Al)
(Al)
(31)
(Al)
(Al)
(Al)
(35)
(Al)
(37)
(Al)
(Al)
(Al)
(Al)
(35)
(Al)
(Al)
(Al)
(Al)
(Al)
(Al)
0 PHYSICAL ELECTRONICS
259

Appendix K. Periodic Table
H
3 0.025
Li
13 56
KLL 43
11 1.665
Na
1S 1072
KLL 994
Atomic number
Element symbol
Most intense photoelectron transition
Most intense Auger transition
9
1s
KLL
1.0
F
685
647
PHI sensitivity factor for designated photoelectron transition
Binding energy, most intense photoelectron transition
Kinetic energy, most intense Auger transition
4 0.074
Be
1S 112
KLL 103
12 0.252
Mg
2p 50
KLL 1186
5 0.159
B
1s 187
KLL 177
13 0.193
Al
2p 73
LMM 68
6 0.296
1S 285
KLL 264
14 0.283
Si
2p 99
LMM 93
7 0.477
N
1S 402
KLL 380
15 0.412
2p 130
LMM 120
8 0.711
O
1S 631
KLL 509
16 0.570
2p 164
LMM 151
1.0
1S 686
KLL 655
17 0.770
Cl
2p 198
LMM 183
He
10 1.340
Ne
1s 863
KLL 818
18 1.011
Ar
2p 242
LMM 215
19 130
K
2p 294
LMM 248
20 1.634
Ca
2p 347
LMM 290
21 1.678
Sc
2p 399
LMM 338
22 1.798
Ti
2p 464
LMM 419
23 1.912
V
2p 512
LMM 473
24 2.201
Cr
2p 574
LMM 628
25 2.42
Mn
2p 638
LMM 587
26 2.686
Fe
2p 707
LMM 703
27 3.255
Co
2p 778
LMM 774
28 3.653
Ni
2p 853
LMM 846
29 4.798
Cu
2p 933
LMM 919
30 3.354
Zn
2P3/21022
LMM 992
31 3.341
Ga
2P3/21117
LMM 1068
32 3.100
Ge
2p3/21217
LMM1145
33 0.570
AS
3d 42
LMM1225
34 0.722
Se
3d 56
LMM 1306
35 0.895
Br
3d 69
MNV 101
36 1.096
Kr
3d
87
37 1.316
Rb
3d 111
MMN102
38 1.578
Sr
3d 134
39 1.867
Y
3d 156
MNV 131
40 2.216
Zr
3d 179
MNV 150
41 2.517
Nb
3d 202
MNV 168
42 2.867
Mo
3d 228
MNV 188
43 3.266
Tc
3d 253
MNN 246
44 3.696
Ru
3d 280
MNN 275
45 4.179
Rh
3d 307
MNN 302
46 4.643
Pd
3d 335
MNN 328
47 5.198
Ag
3d 368
MNN 358
48 3.444
Cd
3ds/2 405
MNN 384
49 3.777
In
3ds/2 444
MNN 411
50 4.095
Sn
3d5/2 485
MNN 438
51 4.473
Sb
3ds/2 528
MNN 465
52 4.925
Te
3ds/2 573
MNN 492
53 5.337
3ds/2 619
MNN 516
54 5.702
Xe
3ds/2 670
MNN 545
55 6.032
Cs
3dsre 726
MNN 669
56 6.361
Ba
3ds/2 781
MNN 601
57 7.708
La
3d 836
MNN 633
72 2.221
Hf
4f 14
NNN 181
73 2.589
Ta
4f 22
NNN 181
74 2.959
W
4f 31
NNN 180
75 3.327
Re
4f 40
NNN 178
76 3.747
OS
41 51
NNN 176
77 4.217
Ir
4f 61
NNN 153
78 4.674
Pt
4f 71
NNN 170
79 5.240
Au
4f 84
NNN 163
80 5.797
Hg
41 101
NOO 81
81 6.447
TI
4f 118
NOO 88
82 6.968
Pb
4f 137
NOO 96
83 7.632
Bi
4f 167
NOO 104
84
85
86
Po
At
Rn
87
89
Fr
Ra
Ac
58 7.399
Ce
3d 884
90 7.498
Th
417/2 333
NOV 68
59 6.356
Pr
3d 932
91
Pa
60 4.697
Nd
3d 981
MNN 729
92 8.476
U
4f7/2 337
NOV 76
61 3.754
Pm
3d 1034
MNN 773
93
Np
62 2.907
Sm
3ds/2iO81
MNN 805
94
Pu
63 2.210
Eu
4d 128
MNN 850
95
Am
64 2.207
Gd
4d 140
MNN 885
96
Cm
65 2.201
Tb
4d 146
MNN1076
97
Bk
66 2.198
Dy
4d 152
MVV1119
98
Cf
67 2.189
Ho
4d 160
MVV1173
99
Es
68 2.184
Er
4d 167
MVV1214
100
Fm
69 2.172
Tm
4d 175
101
Md
70 2.169
Yb
4d 182
102
No
71 2.156
Lu
103
Lr
v n* and are only valid when the electron energy analyzer used has the transmission
*The values are for area measurements of the designated transitions dii ^^ ^ ^ supplied by Physical Electronics and with x-rays at 90° relative to the
characteristics of the spherical capacitor type analyzer equipped with an J™" including both spin-orbit components,
analyzer. When a spin-orbit splitting is not designated, the value is ror
<D PHYSICAL ELECTRONICS
261