MOSFET
MetalOxideSemiconductorFieldEffectTransistor

CoolMOS™CE
500VCoolMOS™CEPowerTransistor
IPx50R280CE

DataSheet
Rev.2.1
Final

PowerManagement&Multimarket

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
1Description

TO-247

TO-220
tab

CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.

Drain
Pin 2

Gate
Pin 1

Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)

Source
Pin 3

Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.

Table1KeyPerformanceParameters
Parameter

Value

Unit

VDS @ Tj,max

550

V

RDS(on),max

0.28

Ω

Qg.typ

32.6

nC

ID,pulse

42.9

A

Eoss@400V

3.2

µJ

Body diode di/dt

500

A/µs

Type/OrderingCode

Package

IPW50R280CE

PG-TO 247

IPP50R280CE

PG-TO 220

Final Data Sheet

Marking
5R280CE

2

RelatedLinks
see Appendix A

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet

3

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Parameter

Symbol

Continuous drain current1)

Values

Unit

Note/TestCondition

13
8.2

A

TC = 25°C
TC = 100°C

-

42.9

A

TC=25°C

-

-

231

mJ

ID =5.2A; VDD = 50V

EAR

-

-

0.35

mJ

ID =5.2A; VDD = 50V

Avalanche current, repetitive

IAR

-

-

5.2

A

-

MOSFET dv/dt ruggedness

dv/dt

-

-

50

V/ns

VDS=0...400V

Gate source voltage

VGS

-20
-30

-

20
30

V

static;
AC (f>1 Hz)

Power dissipation (non FullPAK)
TO-247, TO-220

Ptot

-

-

92

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-55

-

150

°C

-

-

-

60

Ncm M3 and M3.5 screws

IS

-

-

11.3

A

TC=25°C

Diode pulse current

IS,pulse

-

-

42.9

A

TC = 25°C

Reverse diode dv/dt3)

dv/dt

-

-

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs

Maximum diode commutation speed3)

dif/dt

-

-

500

A/µs

VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs

Min.

Typ.

Max.

ID

-

-

Pulsed drain current2)

ID,pulse

-

Avalanche energy, single pulse

EAS

Avalanche energy, repetitive

Mounting torque (non FullPAK) TO-247,
TO-220
Continuous diode forward current
2)

3Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-247,TO-220
Parameter

Symbol

Thermal resistance, junction - case

Values

Unit

Note/TestCondition

Min.

Typ.

Max.

RthJC

-

-

1.36

°C/W -

Thermal resistance, junction - ambient RthJA

-

-

62

°C/W leaded

Soldering temperature, wavesoldering
only allowed at leads

-

-

260

°C

Tsold

1.6mm (0.063 in.) from case for 10s

1)

Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)

Final Data Sheet

4

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter

Symbol

Drain-source breakdown voltage

Values

Unit

Note/TestCondition

-

V

VGS=0V,ID=1mA

3

3.50

V

VDS=VGS,ID=0.35mA

-

10

1
-

µA

VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C

IGSS

-

-

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.25
0.66

0.28
-

Ω

VGS=13V,ID=4.2A,Tj=25°C
VGS=13V,ID=4.2A,Tj=150°C

Gate resistance

RG

-

3

-

Ω

f=1MHz,opendrain

Unit

Note/TestCondition

Min.

Typ.

Max.

V(BR)DSS

500

-

Gate threshold voltage

V(GS)th

2.50

Zero gate voltage drain current

IDSS

Gate-source leakage curent

Table5Dynamiccharacteristics
Parameter

Symbol

Input capacitance

Values
Min.

Typ.

Max.

Ciss

-

773

-

pF

VGS=0V,VDS=100V,f=1MHz

Output capacitance

Coss

-

49

-

pF

VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energy
related1)

Co(er)

-

40

-

pF

VGS=0V,VDS=0...400V

Effective output capacitance, time
related2)

Co(tr)

-

173

-

pF

ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time

td(on)

-

8

-

ns

VDD=400V,VGS=13V,ID=5.2A,
RG=3.4Ω

Rise time

tr

-

6.4

-

ns

VDD=400V,VGS=13V,ID=5.2A,
RG=3.4Ω

Turn-off delay time

td(off)

-

40

-

ns

VDD=400V,VGS=13V,ID=5.2A,
RG=3.4Ω

Fall time

tf

-

7.6

-

ns

VDD=400V,VGS=13V,ID=5.2A,
RG=3.4Ω

Unit

Note/TestCondition

Table6Gatechargecharacteristics
Parameter

Symbol

Gate to source charge

Values
Min.

Typ.

Max.

Qgs

-

4.2

-

nC

VDD=400V,ID=5.2A,VGS=0to10V

Gate to drain charge

Qgd

-

17.1

-

nC

VDD=400V,ID=5.2A,VGS=0to10V

Gate charge total

Qg

-

32.6

-

nC

VDD=400V,ID=5.2A,VGS=0to10V

Gate plateau voltage

Vplateau

-

5.3

-

V

VDD=400V,ID=5.2A,VGS=0to10V

1)

Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

2)

Final Data Sheet

5

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
Table7Reversediodecharacteristics
Parameter

Symbol

Diode forward voltage

Values

Unit

Note/TestCondition

-

V

VGS=0V,IF=5.2A,Tf=25°C

230

-

ns

VR=400V,IF=5.2A,diF/dt=100A/µs

-

2.2

-

µC

VR=400V,IF=5.2A,diF/dt=100A/µs

-

17.5

-

A

VR=400V,IF=5.2A,diF/dt=100A/µs

Min.

Typ.

Max.

VSD

-

0.85

Reverse recovery time

trr

-

Reverse recovery charge

Qrr

Peak reverse recovery current

Irrm

Final Data Sheet

6

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
5Electricalcharacteristicsdiagrams

Powerdissipation(NonFullPAK)

Max.transientthermalimpedance(NonFullPAK)
101

100
90
80
70

100

ZthJC[K/W]

Ptot[W]

60
50
40

0.2
0.1
0.05
10-1

30

0.5

0.02
0.01

20

single pulse

10
0

0

40

80

120

10-2

160

10-5

10-4

10-3

TC[°C]

10-2

10-1

tp[s]

Ptot=f(TC)

ZthJC=f(tP);parameter:D=tp/T

Safeoperatingarea(NonFullPAK)Tj=25°C

Safeoperatingarea(NonFullPAK)Tj=80°C

2

102

10

1 µs
101

1 µs

101

10 µs

10 µs
1 ms
100

ID[A]

ID[A]

100 µs

10 ms

1 ms

100

100 µs

10 ms
DC
10-1

10-2

DC

10-1

100

101

102

103

10-2

100

101

102

VDS[V]

VDS[V]

ID=f(VDS);TC=25°C;D=0;parameter:tp

ID=f(VDS);TC=80°C;D=0;parameter:tp

Final Data Sheet

7

103

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE

Typ.outputcharacteristicsTj=25°C

Typ.outputcharacteristicsTj=125°C

60

35

30

50

20 V
10 V

20 V
25
40

10 V

8V
20
7V

ID[A]

ID[A]

8V
30

15

7V

6V

20
10

5.5 V

6V
10

5.5 V

5V

5

4.5 V

5V
4.5 V
0

0

5

10

15

0

20

0

5

10

VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS

ID=f(VDS);Tj=125°C;parameter:VGS

Typ.drain-sourceon-stateresistance

Drain-sourceon-stateresistance

1.80

0.80

1.60

0.70

1.40

0.60

5V

6V

1.00
10 V
0.80

0.30
0.20

0.40

0.10

0

10

20

30

40

typ

0.40

0.60

0.20

0.00
-60 -40 -20

0

20

40

ID[A]

60

80 100 120 140 160 180

Tj[°C]

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Final Data Sheet

20

98%

0.50

7V

RDS(on)[Ω]

RDS(on)[Ω]

6.5 V

5.5 V

1.20

15

VDS[V]

RDS(on)=f(Tj);ID=4.2A;VGS=13V

8

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE

Typ.transfercharacteristics

Typ.gatecharge

50

10
9

25 °C

40

8

35

7

30

6

VGS[V]

ID[A]

45

25
150 °C

20

4
3

10

2

5

1

0

2

4

6

8

400 V

5

15

0

120 V

0

10

0

10

20

VGS[V]

30

40

Qgate[nC]

ID=f(VGS);VDS=20V;parameter:Tj

VGS=f(Qgate);ID=5.2Apulsed;parameter:VDD

Avalancheenergy

Drain-sourcebreakdownvoltage

260

580

240
560

220
200

540

180

VBR(DSS)[V]

EAS[mJ]

160
140
120
100
80

520

500

480

60
40

460

20
0

0

25

50

75

100

125

150

175

440
-60

-20

Tj[°C]

60

100

140

180

Tj[°C]

EAS=f(Tj);ID=5.2A;VDD=50V

Final Data Sheet

20

VBR(DSS)=f(Tj);ID=1mA

9

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE

Typ.capacitances

Typ.Cossstoredenergy

104

4.5
4.0
3.5

Ciss

103

Eoss[µJ]

C[pF]

3.0

102
Coss

2.5
2.0
1.5

101

1.0

Crss

0.5
100

0

100

200

300

400

500

0.0

0

VDS[V]

100

200

300

400

500

VDS[V]

C=f(VDS);VGS=0V;f=1MHz

Eoss=f(VDS)

Forwardcharacteristicsofreversediode
102

101
125 °C

IF[A]

25 °C

100

10-1

0.4

0.6

0.8

1.0

1.2

1.4

VSD[V]
IF=f(VSD);parameter:Tj

Final Data Sheet

10

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics

Diode recovery waveform
V ,I

Rg1

VDS( peak)

VDS

VDS

VDS

trr

IF

Rg 2

tF

tS

dIF / dt
QF

IF

t

dIrr / dt trr =tF +tS
Qrr = QF + QS

Irrm

Rg1 = Rg 2

IF
10 %Irrm

QS

Table9Switchingtimes
Switching times test circuit for inductive load

Switching times waveform
VDS

90%

VDS
VGS

VGS

10%

td(on)
ton

tr

td(off)

tf
toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit

Unclamped inductive waveform

V(BR)DS
ID

VDS

VDS

Final Data Sheet

11

ID

VDS

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
7PackageOutlines

Figure1OutlinePG-TO247,dimensionsinmm/inches
Final Data Sheet

12

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE

Figure2OutlinePG-TO220,dimensionsinmm/inches

Final Data Sheet

13

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
8AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com

Final Data Sheet

14

Rev.2.1,2014-06-06

500VCoolMOS™CEPowerTransistor
IPW50R280CE,IPP50R280CE
RevisionHistory
IPW50R280CE, IPP50R280CE
Revision:2014-06-06,Rev.2.1
Previous Revision
Revision

Date

Subjects (major changes since last revision)

2.0

2012-06-29

Release of final version

2.1

2014-06-06

Removal of TO-220FP

WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet

15

Rev.2.1,2014-06-06